Knocking processing method in flat-panel display device, and knocking processing method in flat-pane

专利摘要:
Knocking in a flat panel display device in which a first substrate on which a first electrode is formed and a second substrate on which a second electrode are formed are disposed with a vacuum space therebetween, and the first substrate and the second substrate are bonded at their peripheral edges. As a treatment method, a voltage V 1 higher than that of the second electrode is applied to the first electrode in the form of a pulse so that the projections present on the first electrode are evaporated.
公开号:KR20030004390A
申请号:KR1020027014926
申请日:2002-01-24
公开日:2003-01-14
发明作者:고니시모리카즈；이이다고이치
申请人:소니 가부시끼 가이샤；
IPC主号:

专利说明:

Knocking processing method in a flat display device and knocking processing method in a substrate for a flat display device
[2] Background Art [0002] As an image display device replacing the cathode ray tube (CRT) that forms the mainstream, a flat panel (flat panel type) display device has been studied in various ways. As such a flat display device, there can be exemplified a liquid crystal display (LCD), an electroluminescence display (ELD), and a plasma display device (PDP). In addition, a cold cathode field emission display and so-called field emission display (FED) capable of emitting electrons from a solid in a vacuum without thermal excitation are also proposed. Attention is drawn from the power point of view.
[3] A typical structural example of a cold cathode field emission display device (hereinafter sometimes referred to as a display device) is shown in FIG. 7, and a schematic exploded perspective view of part of the cathode panel 10 and the anode panel 20 is shown in FIG. 8. Shown in In this display device, the cathode panel 10 and the anode panel 20 are disposed to face each other, and the cathode panel 10 and the anode panel 20 are bonded to each other through a frame not shown in each peripheral edge portion. The closed space between the panels 10 and 20 is a vacuum space. The cathode panel 10 is provided with a plurality of cold cathode field emission devices (hereinafter sometimes abbreviated as field emission devices) as electron emission bodies. Fig. 7 shows a so-called Spindt type field emission device having an electron emission section 16 composed of a conical electron emission electrode 16A as an example of the field emission device. The spin type field emission device includes a stripe type cathode electrode 12 formed on the first support 11, an insulating layer 13, and a stripe type gate electrode 14 formed on the insulating layer 13. And a conical electron emission electrode 16A formed in the opening 15 formed in the gate electrode 14 and the insulating layer 13. Usually, many electron emission electrodes 16A are attached corresponding to one of the fluorescent substance layers 22 mentioned later. A negative voltage (scanning signal) is applied to the electron emission electrode 16A from the cathode electrode driver circuit 25 through the cathode electrode 12, and the gate electrode 14 is provided from the gate electrode driver circuit 26 relative to the electron emission electrode 16A. A constant voltage (video signal) is applied. Depending on the electric field generated by the application of these voltages, electrons are emitted from the tip of the electron-emitting electrode 16A in accordance with the quantum tunnel effect. In addition, the field emission device is not limited to the spin type field emission device as described above, and may be a field emission device of various types such as an edge type or a planar type.
[4] On the other hand, the anode panel 20 includes a plurality of phosphor layers 22 (phosphor layers 22R, 22G, 22B) and phosphor layers 22 formed in a matrix or stripe shape on a second support 21 made of glass or the like. ) And a black matrix 23 filling the gap between the phosphor layer 22 and the anode layer 24 formed on the entire surface of the phosphor layer 22 and the black matrix 23. The anode electrode 24 A constant voltage higher than the constant voltage applied to the gate electrode 14 is applied from the anode electrode driving circuit 27, and the anode electrode 24 receives electrons emitted from the electron emission electrode 16A into the vacuum space in the phosphor layer ( The anode electrode 24 also protects the phosphor particles constituting the phosphor layer 22 from sputters caused by particles such as ions and at the same time the phosphor layer formed by electron excitation ( The light emitted from 22) is reflected toward the second support body 21; It also has a function of improving the brightness of the display screen observed from the outside of the support 21. The anode electrode 24 is made of, for example, an aluminum thin film.
[5] In general, the cathode electrode 12 and the gate electrode 14 are each formed in a stripe shape in a direction in which the projection images of these electrodes 12 and 14 are orthogonal to each other. A plurality of overlapping areas (corresponding to one pixel area of a monochrome display device or one area of one subpixel of three subpixels constituting one pixel of a color display device) in which the projected image overlaps, The field emission devices are arranged. In addition, these overlapping areas are arranged in a two-dimensional matrix in the effective area of the cathode panel 10 (area serving as an actual display screen). One pixel includes one group of field emission elements arranged in an overlapping region of the cathode panel side cathode electrode 12 and the gate electrode 14, and the anode panel side phosphor layer 22 facing one group of these field emission elements. It is comprised by). In the effective area, such pixels are arranged as orders of several hundred thousand to several million, for example.
[6] By combining the cathode panel 10 and the anode panel 20 in which such field emission devices are formed, a display device shown in FIGS. 7 and 8 can be obtained. Specifically, for example, a frame (not shown) having a height of about 1 mm made of ceramics or glass is prepared, and the frame, the cathode panel 10, and the anode panel 20 are formed using, for example, frit glass. After bonding together, the frit glass is dried and calcined at about 450 ° C. for about 10 to 30 minutes. Thereafter, the inside of the display device is evacuated to a vacuum degree of about 10 ^-4 Pa, and sealed in a suitable manner. Alternatively, for example, bonding of the frame, the cathode panel 10 and the anode panel 20 may be performed in a high vacuum atmosphere. Alternatively, depending on the structure of the display device, the cathode panel 10 and the anode panel 20 may be joined without a frame.
[7] The gap between the cathode panel 10 and the anode panel 20 is about 0.1 mm to 1 mm. A high voltage (for example, 5 kV) is applied to the anode electrode 24 of the anode panel 20. In such a display device, discharge may occur between the gate electrode 14 formed on the cathode panel 10 and the anode electrode 24 formed on the anode panel 20, and the quality of the image display is remarkably impaired, Or the lifetime of a display apparatus may become short. In the discharge generation mechanism in the vacuum space, first, the emission of electrons or ions from the electron emission electrode 16A under the strong electric field is triggered by the discharge, and energy is transferred from the anode electrode drive circuit 27 to the anode electrode 24. Supplied, the temperature of the anode electrode 24 locally rises, so that the occlusion of the occlusion gas inside the anode electrode 24 or the material itself constituting the anode electrode 24 evaporates, It is thought that small-scale discharge grows into large-scale discharge (for example, spark discharge).
[8] In order to suppress the discharge between the anode electrode 24 and the gate electrode 14, it is effective to suppress the emission of electrons and ions that trigger the discharge, but very precise particle management is required for this purpose. In addition, it is important that no projections at the start of discharge exist on the anode electrode, the gate electrode, the cathode electrode, or the like. However, there are enormous technical difficulties in performing such particle management in the manufacturing process of the display device and managing the manufacturing process of the display device so that projections do not exist in various electrodes.
[9] In the cathode ray tube, if there are sharp protrusions or the like on each grid electrode constituting the electron lens, abnormal discharge may occur during operation of the cathode ray tube. In order to prevent such abnormal discharge, a knocking process is performed in the manufacturing process of the cathode ray tube. In this knocking process, a discharge is generated in advance in a portion where a discharge is likely to occur such as a radical projection portion such as each grid electrode, and the projection portion or the like is melted and removed. However, as far as the inventors know, there is no known example of applying such a treatment as knocking in the production of the cathode ray tube to the manufacture of the cold cathode electroluminescence display.
[10] In addition, in order to match the radius of curvature of the tip of the cathode after completion of the cold cathode electroluminescence display device, a technique of applying a predetermined voltage to the cathode to cause electric field evaporation from the tip of the cathode is disclosed in Japanese Patent No. 3094459. Although known from the publications, there is no mention of the knocking technique in this publication.
[11] Accordingly, it is an object of the present invention to provide projections that can be discharged from various electrodes constituting the flat display device after completion of the flat display device or during manufacture of the flat display device (before assembly of the flat display device). The present invention provides a method of removing the effective.
[1] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a knocking processing method in a flat panel display and a knocking processing method in a substrate for a flat panel display.
[60] 1A and 1B are diagrams schematically showing changes in the voltage V ₁ in the first embodiment.
[61] Figure 2 is a voltage V _1, a diagram illustrating the change in V ₂ schematically in the second embodiment.
[62] 3 is a schematic view of a knocking processing apparatus suitable for implementing the substrate knocking processing method of the third embodiment.
[63] 4 is a diagram schematically showing a change in the voltage V ₁ in the third embodiment.
[64] 5A and 5B are diagrams schematically showing changes in the voltage V ₁ in the fourth embodiment.
[65] FIG. 6 is a diagram schematically showing changes in voltages V ₁ and V ₂ in Example 5. FIG.
[66] 7 is a view showing a typical configuration example of a conventional cold cathode field emission display.
[67] 8 is a schematic exploded perspective view of a portion of the cathode panel and the anode panel.
[68] 9A and 9B are schematic partial cross-sectional views of a first support and the like for explaining a method of manufacturing a field emission device having a first structure comprising a spin type field emission device.
[69] Drawing.
[70] 10A and 10B are schematics of a first support and the like for explaining a method of manufacturing a field emission device having a first structure composed of a spin type field emission device, following FIG. 9B. Partial cross section.
[71] 11A to 11D are schematic partial cross-sectional views of a substrate and the like for explaining an example of a method of manufacturing an anode panel.
[72] 12A and 12B are schematic partial cross-sectional views of a first support and the like for explaining a method of manufacturing a field emission device having a first structure comprising a crown type field emission device.
[73] 13A to 13C are schematics of a first support and the like for explaining a method of manufacturing a field emission device having a first structure composed of a crown type field emission device, following FIG. 12B. Partial cross section.
[74] 14A and 14B are schematic partial cross-sectional and partial perspective views of a first support and the like for explaining a method of manufacturing a field emission device having a first structure comprising a crown type field emission device.
[75] 15A to 15C are schematic partial cross-sectional views of a first support and the like for explaining a method of manufacturing a field emission device having a first structure comprising a flat field emission device.
[76] 16A to 16C are schematic partial cross-sectional views of a first support and the like for explaining a method of manufacturing a modification of the field emission device having the first structure including the flat field emission device.
[77] 17A and 17B are schematic partial cross-sectional views of a first support and the like for explaining a method of manufacturing another modified example of the field emission device having the first structure including the flat field emission device.
[78] 18A and 18B show a first support and the like for explaining a method of manufacturing another modified example of the field emission device having the first structure including the flat field emission device, subsequent to FIG. 17B. A typical partial cross section of the
[79] 19A to 19C are schematic partial cross-sectional views of a first support and the like for explaining a method of manufacturing a field emission device having a second structure composed of a planar field emission device.
[80] 20A and 20B are schematic partial cross-sectional views of a modification of the field emission device having the second structure composed of the planar field emission device.
[81] 21 is a schematic partial sectional view of another modification of the field emission device having the second structure composed of the planar field emission device.
[82] 22A and 22B are schematic partial cross-sectional and partial perspective views of a first support and the like for explaining a method of manufacturing another modified example of the field emission device having the second structure including the planar field emission device; to be.
[83] 23A and 23B illustrate a method of manufacturing another modified example of the field emission device having the second structure made of the planar field emission device, following the Figures 22A and 22B. It is typical partial cross section and partial perspective view of a 1st support body etc. for this.
[84] 24A and 24B illustrate a method of manufacturing another modified example of the field emission device having the second structure made of the planar field emission device, following FIG. 23A and FIG. It is typical partial cross section and partial perspective view of a 1st support body etc. for this.
[85] 25A and 25B illustrate a method of manufacturing another modified example of the field emission device having the second structure made of the planar field emission device, following the steps shown in FIGS. 24A and 24B. It is typical partial cross section figure of the 1st support body etc. for this.
[86] 26A to 26C are schematic partial cross-sectional views of a first support and the like for explaining a method of manufacturing another modified example of the field emission device having the second structure composed of the planar field emission device.
[87] 27A to 27C have a second structure composed of planar field emission devices.
[88] It is a typical partial cross section figure of a 1st support body etc. for demonstrating the manufacturing method of the further modification of the field emission element.
[89] 28A and 28B are schematic partial cross-sectional views of a first support and the like for explaining a method of manufacturing another modified example of the field emission device having the second structure composed of the planar field emission device.
[90] 29A and 29B show a first support for explaining a method of manufacturing another modified example of the field emission device having the second structure consisting of the planar field emission device, following FIG. 28B. It is typical sectional drawing of such as.
[91] 30A to 30C are schematic partial cross-sectional views of the field emission device having the third structure including the edge type field emission device.
[92] 31A to 31C are schematic partial cross-sectional views of a first support and the like for explaining a method of manufacturing an example of a field emission device having a third structure including an edge type field emission device.
[93] 32 (A) and (B) are schematic diagrams of a first support or the like for explaining [Spint Field Emission Device: Modification-1 of Manufacturing Method] for manufacturing the spin type field emission device shown in FIG. Partial cross section.
[94] 33A and 33B show a spin type field emission device for producing the spin type field emission device shown in FIG. 35, following FIG. 32B. It is a typical partial cross section figure of a 1st support body etc. for demonstrating this.
[95] (A) and (B) of FIG. 34 are subsequent to (B) of FIG. 33 for the manufacture of the spin type field emission device shown in FIG. It is typical partial cross section figure of a 1st support body etc. for demonstrating this.
[96] Fig. 35 is a schematic partial sectional view of the spin type field emission device obtained in [Spint type field emission device: Variant-1) of the manufacturing method.
[97] 36 (A) and (B) are diagrams for explaining the mechanism in which the cone-shaped electron emitting portion is formed.
[98] 37A to 37C are diagrams schematically showing the relationship between a large resist selection ratio, a height, and a shape of an electron emitting portion.
[99] 38 (A) and (B) are schematic partial cross-sectional views of a first support and the like for explaining "Spint type field emission device: modification-1 of manufacturing method".
[100] 39 (A) and (B) are schematic partial cross-sectional views of a first support or the like for explaining "Spint type field emission device: modification of manufacturing method-2" following FIG. 38 (B). to be.
[101] 40 (A) and (B) are schematic partial cross-sectional views of a first support or the like for explaining [Spint type field emission device: modification of manufacturing method-2] following FIG. 39 (B). .
[102] 41 (A) and (B) are diagrams showing how the surface profile of the object to be etched changes every constant time.
[103] 42 (A) and (B) are schematic partial cross-sectional views of a first support or the like for explaining [Spint type field emission device: modification-3 of manufacturing method].
[104] FIG. 43 is a schematic partial sectional view of a first support or the like for explaining [Spint type field emission device: modification-3 of manufacturing method] following FIG. 42B.
[105] Fig. 44 is a schematic partial sectional view of the spin type field emission device manufactured in [Spint type field emission device: Variant-4 of manufacturing method].
[106] 45 (A) and (B) are schematic partial cross-sectional views of a first support or the like for explaining [Spint type field emission device: modification-4 of manufacturing method].
[107] 46 (A) and (B) are schematic partial cross-sectional views of a first support or the like for explaining [Spint type field emission device: modification-4 of manufacturing method] following FIG. 45 (B). .
[108] 47 (A) and (B) are schematic partial cross-sectional views of a first support or the like for explaining "Spint type field emission device: modification of the manufacturing method -4" following FIG. 46 (B). Cotton.
[109] 48 (A) and (B) are schematic partial cross-sectional views of a first support or the like for explaining [Spint type field emission device: modification-5 of manufacturing method].
[110] 49 (A) and (B) are schematic partial cross-sectional views of a first support or the like for explaining [Spint type field emission device: modification-5 of manufacturing method] following FIG. 48 (B). .
[111] 50 is a schematic partial sectional view of a first support or the like for explaining [Spint type field emission device: variation of manufacturing method-6)].
[112] Fig. 51 is a schematic partial sectional view of the [lanar field emission device 3].
[113] 52A and 52B are schematic partial cross-sectional views and a plan view of [lane type field emission device 4 (4)].
[114] 53A to 53D are schematic plan views showing a plurality of openings of the gate electrode.
[115] 54 is a schematic partial cross-sectional view of an electron emitting portion and a converging electrode in the flat panel display according to the third aspect of the present invention.
[12] The knocking processing method (hereinafter sometimes referred to as the knocking processing method according to the first aspect of the present invention) in the flat display device according to the first aspect of the present invention for achieving the above object is a The knocking processing method after completion,
[13] Knocking in a flat panel display device in which a first substrate on which a first electrode is formed and a second substrate on which a second electrode are formed are disposed with a vacuum space therebetween, and the first substrate and the second substrate are bonded at their peripheral edges. As a treatment method,
[14] A voltage V ₁ higher than that of the second electrode is applied to the first electrode in steps so that the projections present on the first electrode are evaporated.
[15] Here, the electric field evaporation refers to the phenomenon that when a strong constant voltage is applied to the projections, the atoms on the surface of the projections become positive ions and evaporate, and the atoms on the surface are ionized by the strong electric field and protrude into the vacuum space.
[16] Further, in the form of stepwise applied to the voltage V _1, it is included in the form that is increase the voltage V ₁ to the form to be applied while increasing the voltage V ₁ to the step-like, monotone (單調) increases while.
[17] In the knocking processing method according to the first aspect of the present invention, first, the knocking processing method according to the first aspect of the present invention is performed, and then, the first substrate and the second substrate are replaced, and according to the first aspect of the present invention. The knocking processing method can be implemented again. Alternatively, after the completion of the first voltage application step of applying the voltage V ₁ higher than the second electrode to the first electrode, the voltage V ₂ higher than the first electrode is applied to the second electrode, so that the protrusions present on the second electrode are increased. The second voltage application step of electric field evaporation is performed, after which the voltage higher than the voltage V ₁ is set to the new voltage V ₁ , and the voltage higher than the voltage V ₂ is set to the new voltage V ₂ . It is good also as a form which repeats a 2 voltage application process. In the latter case, the value of the voltage V _{1 and} the value of the voltage V ₂ may be different, but it is preferable to make the value of the voltage V ₁ equal to the value of the voltage V _{2 from} the viewpoint of simplifying the knocking processing method. In the first voltage application step and the second voltage application step, the voltage V ₁ and the voltage V ₂ may be constant or may be increased in steps.
[18] In addition, applying a voltage V ₁ higher than the second electrode to the first electrode means applying a voltage such that a potential difference V ₁ is generated to the first electrode on the basis of the second electrode, or the first electrode. On the basis of this, it is meant to apply a voltage such that a potential difference -V ₁ occurs to the second electrode. In addition, applying a voltage V ₂ higher than the first electrode to the second electrode means applying a voltage such that a potential difference V ₁ is generated to the second electrode on the basis of the first electrode, or the second electrode. On the basis of the reference, it means applying a voltage such that a potential difference -V ₂ occurs to the first electrode.
[19] In the knocking processing method according to the first aspect of the present invention, the initial voltage V ₁ or the voltage V _{2 is set} to what value, the voltage increase amount is set, and the voltage is applied at each step. What is necessary is just to determine beforehand how much the increase rate per unit time of time or voltage increase amount may be made. When the voltage V ₁ higher than the second electrode is applied to the first electrode, the value of the voltage applied to the first electrode is set to V ₁ volt (> 0 volt) and the value of the voltage applied to the second electrode is set to 0 volts. Although it is preferable, it is not limited to the value of these voltages. When the voltage V ₂ higher than the first electrode is applied to the second electrode, the value of the voltage applied to the first electrode is 0 volt and the value of the voltage applied to the second electrode is V ₂ volt (= V ₁ > 0). Volts), but it is not limited to the value of these voltages.
[20] The knocking processing method (hereinafter sometimes referred to as the knocking processing method according to the second aspect of the present invention) in the flat display device according to the second aspect of the present invention for achieving the above object is the first aspect of the present invention. Unlike the knocking processing method according to one embodiment, a voltage V ₁ higher than that of the second electrode is applied to the first electrode in a pulsed manner.
[21] That is, the knocking processing method according to the second aspect of the present invention relates to the knocking processing method after completion of the flat panel display device.
[22] Knocking in a flat panel display device in which a first substrate on which a first electrode is formed and a second substrate on which a second electrode are formed are disposed with a vacuum space therebetween, and the first substrate and the second substrate are bonded at their peripheral edges. As a treatment method,
[23] A voltage V ₁ higher than that of the second electrode is applied to the first electrode in a pulsed form so that the projections present on the first electrode are evaporated.
[24] In the knocking processing method according to the second aspect of the present invention, the first electrode and the second electrode are zero volts after completion of the pulse voltage application step of applying a pulse type voltage V ₁ higher than the second electrode to the first electrode. After a predetermined time has elapsed, a pulse type voltage V ₁ higher than that of the second electrode may be applied to the first electrode. In this case, the voltage V ₁ can be increased for each pulse or for a plurality of pulses. In addition, after completion of the pulse voltage application step of applying a pulse type voltage V ₁ higher than the second electrode to the first electrode, a voltage V ₂ higher than the first electrode is applied to the second electrode, whereby the first electrode and the second electrode are applied. It is preferable to perform the current detecting step of detecting the current flowing between the electrodes because the knocking processing method can be performed while evaluating whether the projections present in the first electrode are evaporated. That is, by applying a voltage V ₂ higher than the first electrode to the second electrode, a high electric field is applied to the protrusions present on the first electrode, and electrons are emitted from the protrusions by the quantum tunnel effect, and the electrons are released from the first electrode. It is detected as a current flowing between the second electrode and the second electrode. If the projections are electroevaporated, these currents will not be detected. After the current detection step, the pulse voltage application step is executed again.
[25] In this case, when the current flowing between the first electrode and the second electrode becomes a predetermined value or less, the voltage higher than the voltage V ₁ is set as the new voltage V ₁ , and the voltage higher than the voltage V ₂ is set as the new voltage. As V ₂ , it is preferable to repeat the pulse voltage application step and the current detection step. In this case, the number of pulses of the voltage V ₁ in the one pulse voltage application step may be one pulse or a plurality of pulses. As a result, the projections present in the first electrode can be reliably electric-evaporated, and electrons are emitted from the projections by the quantum tunnel effect, so that the electrons can be reliably detected as a current flowing between the first electrode and the second electrode. have. Further, when the voltage V ₂ becomes equivalent to the actual operating voltage V _OP of the flat panel display device, the voltage V ₂ is higher than the voltage V ₁ until the current flowing between the first electrode and the second electrode becomes a predetermined value or less. It is preferable to set the voltage to the new voltage V ₁ and to set the voltage V ₂ to a value corresponding to the actual operating voltage V _OP , and to repeat the pulse voltage application process and the current detection process. This makes it possible to more securely evaporate the projections present on the first electrode, and it is possible to automatically terminate the knocking process. In addition, the predetermined value in the electric current which flows between a 1st electrode and a 2nd electrode may just determine by performing a test previously, for example, can illustrate 0 amps. In the pulse voltage application step, the value of the voltage applied to the first electrode is set to V ₁ volt (> 0 volt), and the value of the voltage applied to the second electrode is set to 0 volts. In the current detection step, the second electrode is used. It is preferable to set the value of the voltage applied to the first electrode to 0 volts and set the value of the voltage applied to the first electrode to be -V ₂ volts (<0), but the present invention is not limited to these voltages.
[26] In the knocking processing method according to the second aspect of the present invention, first, the knocking processing method according to the second aspect of the present invention is performed, and then, the first substrate and the second substrate are replaced, and according to the second aspect of the present invention. The knocking processing method can be implemented again. Or it is also possible to set it as the form which implements the knocking processing method which concerns on the 2nd aspect of this invention by exchanging alternately a 1st board | substrate and a 2nd board | substrate. That is, after the voltage V ₁ of a high pulse-like than the second electrode to the first electrode the first pulse or multiple pulses, applied, and replace the first substrate and the second substrate, it may be in the form of repeatedly performing the operation. .
[27] In the knocking processing method according to the second aspect of the present invention, what is the value of the voltage V ₁ (pulse high) or the voltage V _2, and how much the pulse width, the number of pulses, and the pulse interval are set will be a certain degree of voltage increase is determined and when subjected to test in advance, a relationship between voltage V ₁ and the voltage V _2, can be exemplified _{O.O1V 1 ≤ V 2 ≤ O.5V 1} .
[28] In the knocking processing method (hereinafter, collectively referred to as the knocking processing method of the present invention) according to the first aspect or the second aspect of the present invention, the flat display device is a cold cathode field emission display device.
[29] (1) The cathode electrode and the gate electrode provided in the cathode panel of the cold cathode field emission display device correspond to the first electrode formed on the first substrate, and the anode electrode provided in the anode panel of the cold cathode field emission display device. This configuration corresponds to the second electrode formed on the second substrate.
[30] (2) The cathode electrode, the gate electrode and the converging electrode included in the cathode panel of the cold cathode electroluminescent display correspond to the first electrode formed on the first substrate, and are provided in the anode panel of the cold cathode electroluminescent display. The anode electrode corresponded to the 2nd electrode formed in the 2nd board | substrate
[31] (3) The cathode electrode and the gate electrode provided in the anode panel of the cold cathode field emission display device correspond to the first electrode formed on the first substrate, and are provided in the cathode panel of the cold cathode field emission display device. This configuration corresponds to the second electrode formed on the second substrate.
[32] (4) The cathode electrode and gate electrode provided in the anode panel of the cold cathode field emission display device correspond to the first electrode formed on the first substrate, and are provided in the cathode panel of the cold cathode field emission display device. And the converging electrode correspond to the second electrode formed on the second substrate.
[33] You can do In the configuration of (1), the projections of the gate electrodes are mainly removed by electric field evaporation, and in the configuration of (2), the projections of the convergence electrodes are mainly removed by the electric field evaporation, and the configuration of (3) and (4) In the configuration, the projections of the anode electrode are mainly removed by the field evaporation.
[34] In addition, depending on the configuration of the cold cathode electroluminescence display device, a configuration in which the convergence electrode is sandwiched between the first substrate and the second substrate may be possible, but such a configuration is described in (2) and (4). Included in the configuration.
[35] Here, in the knocking processing method of the present invention, in the case where the flat display device is a cold cathode electron emission display device, in order not to express a function as a cold cathode electron emission display device, that is, electrons from the cold cathode electron emission device are used. In order not to emit light, it is necessary to short-circuit the cathode electrode and the gate electrode, or short-circuit the cathode electrode, the gate electrode and the convergence electrode, and to make these electrodes at the same potential. The actual operating voltage V _OP described above is a value corresponding to the voltage applied to the anode electrode during the display operation of the negative cold field emission display.
[36] In the following description, for convenience, the cathode panel is used as the first substrate and the anode panel is used as the second substrate (that is, the configuration of (1) or (2)). The knocking processing method according to the aspect is called knocking processing A, the anode panel is the first substrate, and the cathode panel is the second substrate (that is, the configuration of (3) or (4). ) And executing the knocking processing method according to the first or second aspect of the present invention are referred to as knocking processing B. FIG.
[37] In the knocking processing method of the present invention, when the flat display device is a cold cathode electron emission display device, as described above, for example, after the knocking process A is completed, the knocking process B may be executed, and the knocking process may be performed. After the processing B is completed, the knocking processing A may be executed, or the knocking processing A and the knocking processing B may be alternately executed. Which of the knocking processing A and the knocking processing B is executed first is subjected to a preliminary test, and knocking according to the first or second aspect of the present invention is performed by using the assumed substrate as the first substrate if more projections exist. The treatment method may be performed first. Specifically, first, a process of detecting a current flowing between the first electrode and the second electrode by applying a voltage V _TEST higher than the first electrode to the second electrode includes the configuration of (1) or (2). When the current value flowing in the configuration of (3) or (2) is higher than that of the configuration of (3) or (4), and is sequentially executed in the configuration of (3) or (4). The processing A may be executed first, and the knocking processing B may be executed first when the configuration of (3) or (4) has a higher current value than the configuration of (1) or (2).
[38] The knocking processing method (hereinafter sometimes referred to as the substrate knocking processing method according to the first aspect of the present invention) in the planar display device substrate according to the first aspect of the present invention for achieving the above object is a flat type. The present invention relates to a knocking processing method during manufacture of a display device (before assembly of a flat panel display device).
[39] After arranging the substrate for a flat panel display device on which the electrode is formed and the substrate for knocking on which the knocking electrode is formed, with a vacuum space therebetween,
[40] A voltage V ₁ higher than that of the knocking electrode is applied to the electrode stepwise, so that the projections present on the electrode are evaporated.
[41] Here, in the form of a step-by-step applied to the voltage V _1, it is included in the form that the form is to be applied while increasing the voltage V ₁ to the step-like, while increasing the voltage V ₁ to be monotonously increased.
[42] In addition, in the following description, the electrode formed in the board | substrate for flat panel display apparatuses may be called a board | substrate electrode for convenience.
[43] In the substrate knocking processing method according to the first aspect of the present invention, how much the initial voltage V ₁ is to be set, how much the voltage is increased, and how long the voltage is applied at each step What is necessary is just to determine beforehand how much the increase rate of the increase of unit time contact of an increase amount may be carried out. When applying a voltage V ₁ higher than the knocking electrode to the substrate electrode, it is preferable to set the value of the voltage applied to the substrate electrode to V ₁ volt (> 0 volt) and the value of the voltage applied to the knocking electrode to 0 volt. However, it is not limited to the value of these voltages.
[44] The knocking processing method (hereinafter sometimes referred to as the substrate knocking processing method according to the second aspect of the present invention) in the planar display device substrate according to the second aspect of the present invention for achieving the above object is a flat type. The present invention relates to a knocking processing method during manufacture of a display device (before assembly of a flat panel display device).
[45] After arranging the substrate for a flat panel display device on which the electrode is formed and the substrate for knocking on which the knocking electrode is formed, with a vacuum space therebetween,
[46] The electrode is applied with a voltage V ₁ pulse type higher than that of the knocking electrode, so that the protrusions present on the electrode are evaporated.
[47] In the substrate knocking processing method according to the second aspect of the present invention, after the substrate electrode is applied with a pulse type voltage V ₁ higher than that of the knocking electrode, the substrate electrode and the knocking electrode are set to O volts, and a predetermined time elapses. After that, a pulse type voltage V ₁ higher than that of the knocking electrode may be applied to the substrate electrode. In this case, the voltage V ₁ can be increased every one pulse and every plurality of pulses. In addition, after the completion of the pulse voltage application step of applying a pulse type voltage V ₁ higher than the knocking electrode to the substrate electrode, a voltage V ₂ higher than the substrate electrode is applied to the knocking electrode to flow between the substrate electrode and the knocking electrode. It is preferable to perform the current detecting step of detecting the current because the knocking processing method can be executed while evaluating whether or not the projections present in the substrate electrode are evaporated. That is, by applying a voltage V ₂ higher than the substrate electrode to the knocking electrode, a high electric field is applied to the projections present on the substrate electrode, and electrons are emitted from the projections by the quantum tunnel effect, and these electrons are used for the substrate electrode and the knocking. It is detected as a current flowing between the electrodes. If the projections are electroevaporated, these currents will not be detected.
[48] In addition, the application of the voltage V ₁ higher than that of the knocking electrode means that the substrate electrode applies a voltage such that a potential difference V ₁ occurs to the substrate electrode on the basis of the knocking electrode, or based on the substrate electrode. This means that a voltage such that a potential difference -V ₁ is generated is applied to the knocking electrode. In addition, applying a voltage V ₂ higher than the substrate electrode to the knocking electrode means applying a voltage such that a potential difference V ₂ occurs to the knocking electrode on the basis of the substrate electrode, or referring to the knocking electrode. This means that a voltage such that a potential difference -V ₂ is generated is applied to the substrate electrode.
[49] In this case, when the current flowing between the substrate electrode and the knocking electrode reaches a predetermined value or less, the voltage higher than the voltage V ₁ is set to the new voltage V ₁ , and the voltage higher than the voltage V ₂ is set to the new voltage V. and _2, it is preferable to repeat the pulse voltage application process and the current detection process. In this case, the number of pulses of the voltage V ₁ in the one pulse voltage application step may be one pulse or a plurality of pulses. As a result, the projections present on the substrate electrode can be reliably electric-evaporated, and electrons are emitted from the projections by the quantum tunnel effect, and these electrons can be reliably detected as a current flowing between the substrate electrode and the knocking electrode. Further, when the voltage V ₂ becomes equivalent to the actual operating voltage V _OP of the flat panel display device, the voltage higher than the voltage V ₁ until the current flowing between the substrate electrode and the knocking electrode becomes a predetermined value or less. It is preferable to set the new voltage V ₁ , the voltage V ₂ to a value corresponding to the actual operating voltage V _OP , and to repeat the pulse voltage application process and the current detection process. This makes it possible to more securely evaporate the projections present on the substrate electrode, which makes it possible to automatically terminate the knocking process. In addition, the predetermined value in the current flowing between the substrate electrode and the knocking electrode may be determined by performing a test in advance, for example, 0 amps can be exemplified. In the pulse voltage application step, the voltage applied to the substrate electrode is V ₁ volt (> 0 volt), and the voltage applied to the knocking electrode is 0 volt. In the current detection step, the knocking electrode is applied to the knocking electrode. It is preferable that the value of the voltage to be applied is 0 volts and the value of the voltage to be applied to the substrate electrode is -V ₂ volts (< 0), but the voltage is not limited to these values.
[50] In the substrate knocking processing method according to the second aspect of the present invention, what is the value of voltage V ₁ (pulse high) or voltage V _2, and how much pulse width, number of pulses, and pulse interval are set , will be a certain degree of voltage increase has been determined if the test is performed in advance, a relationship between voltage V ₁ and the voltage V _2, can be exemplified _{O.O1V 1 ≤ V 2 ≤ O.5V 1} .
[51] In the substrate knocking processing method (hereinafter, collectively referred to as the substrate knocking processing method of the present invention) according to the first or second aspect of the present invention, the substrate for a flat panel display device and the substrate for knocking are vacuumed. In order to arrange | position the space | interval, specifically, what is necessary is just to arrange | position the board | substrate for flat display devices and the board | substrate for knocking in a vacuum chamber.
[52] In the substrate knocking processing method of the present invention, the substrate for flat panel display and the substrate for knock may be approximately the same size, and the size of the substrate for knock may be smaller than the substrate for flat panel display device. In the latter case, the substrate knocking treatment method of the present invention can be carried out by scanning the knocking substrate on the flat display substrate.
[53] In the substrate knocking processing method of the present invention, a flat panel display device is used as a cold cathode electron emission display device.
[54] (5) The structure in which the cathode electrode and the gate electrode provided in the cathode panel of the cold cathode field emission display device correspond to the electrodes formed on the substrate for a flat panel display device.
[55] (6) A cathode, a gate electrode and a converging electrode provided in the cathode panel of the cold cathode field emission display device correspond to the electrodes formed on the substrate for a flat panel display device.
[56] (7) A configuration in which the anode electrode provided in the anode panel of the cold cathode field emission display device corresponds to the electrode formed on the substrate for a flat panel display device
[57] You can do In the configuration of (5), the projections of the gate electrodes are mainly removed by electric field evaporation. In the configuration of (6), the projections of the convergent electrodes are mainly removed by the electric field evaporation. In the configuration of (7), projections of the anode electrode Is removed by field evaporation.
[58] Here, in the substrate knocking processing method of the present invention, in the case where the flat display device is a cold cathode field emission display device, in order not to exhibit a function as a cold cathode field emission display device, that is, from a cold cathode field emission device, In order not to emit electrons, it is necessary to short the cathode electrode and the gate electrode, or to short the cathode electrode, the gate electrode and the convergence electrode, and to make these electrodes at this potential. The actual operating voltage V _OP described above is a value corresponding to the voltage applied to the anode electrode during the operation of the cold cathode field emission display.
[59] In the present invention, projections existing in the electrode can be reliably removed by the electric field evaporation.
[116] Hereinafter, with reference to the drawings, the present invention will be described according to the embodiment.
[117] (Example 1)
[118] Embodiment 1 relates to a knocking processing method in a flat panel display device according to a first aspect of the present invention. That is, the knocking processing method of Example 1 relates to the knocking processing method after completion of the flat panel display device, wherein the first substrate on which the first electrode is formed and the second substrate on which the second electrode is formed are disposed with a vacuum space therebetween. This is a knocking processing method in a flat panel display device in which a first substrate and a second substrate are bonded at their peripheral edge portions. Then, a voltage V ₁ higher than that of the second electrode is applied to the first electrode in steps so that the protrusions present on the first electrode are evaporated. Further, the embodiment 1 is applied while increasing the voltage V ₁ to the step-like (step-like).
[119] The flat display device of Example 1 is a cold cathode electron emission display device (hereinafter referred to simply as a display device), and the structure thereof is a spin type cold cathode electron emission device shown in FIGS. 7 and 8. (Hereinafter, sometimes referred to as a field emission device), a plurality of structures are provided, so detailed description thereof will be omitted. In addition, the manufacturing method of a spin type field emission element, the structure of another kind of field emission element, and a manufacturing method are mentioned later.
[120] In Example 1, after completing knocking process B with an anode panel as a 1st board | substrate, a cathode panel as a 2nd board | substrate (that is, about the structure of said (3)), a cathode panel as a 1st board | substrate Then, knocking processing A is performed using the anode panel as the second substrate (that is, for the configuration of (1) above). Further, in order not to express a function as a display device, that is, not to emit electrons from the field emission device, the cathode electrode and the gate electrode are shorted to make these electrodes at the same potential.
[121] The voltage V ₁ is applied to the first electrode while increasing the voltage V ₁ higher than the second electrode in steps, and the change in the voltage V ₁ when the projections present in the first electrode are evaporated is shown in FIGS. 1A and 1B. It is typically shown. Here, Fig. 1A shows the change of the voltage V ₁ (voltage applied to the anode electrode) in the knocking process B, and Fig. 1B shows the voltage V ₁ (shorted cathode electrode in the knocking process A). And a voltage applied to the gate electrode).
[122] Embodiment knocking process of Example 1 A, in B, the value of the voltage applied to the first electrode, V ₁ volt (> 0 V), a is a value of the voltage applied to the second electrodes to zero volts, the initial voltage V a value of ₁ 1kV, the time the voltage increase, which is applied to 0.01kV, the voltage at each step one second, had a value of a voltage V ₁ that ultimately applied to the 30kV.
[123] As described above, after the knocking processing A and B were performed on the display device, the actual operating voltage V _OP was applied to the shorted cathode electrode and the gate electrode, and the anode electrode was set at 0 volts to measure the current flowing therebetween. Did not flow. Moreover, although the actual operating voltage _VOP was applied to the anode electrode and the shorted cathode electrode and the gate electrode were 0 volts, the current flowing therebetween was measured, but no current flowed. In other words, it was confirmed that the projections present in the first electrode could be removed by electroevaporation. In addition, the actual operating voltage V _OP is a voltage applied to the anode electrode during the display operation of the display device. The same applies to the following. Moreover, although the knocking process B was performed after completing the knocking process A, the same result was obtained. Moreover, although the knocking process B was performed after the knocking process A was completed about the structure of (2) mentioned above and the structure of (4), the same result was obtained.
[124] (Example 2)
[125] Example 2 is a variation of Example 1. In Example 2, the completion of the first voltage application step of applying a voltage V ₁ higher than the second electrode (in Example 2, the shorted cathode electrode and gate electrode) to the first electrode (Anode electrode in Example 2) Subsequently, a second voltage application step of applying a voltage V ₂ higher than the first electrode to the second electrode, and subjecting the projections present in the second electrode to electric field is carried out, and then a new voltage higher than the voltage V ₁ is performed. to V _1, and to a voltage higher than the voltage V ₂ to a new voltage V _2, the first voltage application step is repeated and the second voltage application step.
[126] Here, in the first voltage application step, the value of the voltage applied to the first electrode is V ₁ volt (> 0 volt), the value of the voltage applied to the second electrode is 0 volt, and the initial voltage V ₁ is Was 1 kV, the voltage increase amount was 0.01 kV, the time for applying the voltage in each step was 1 second, and the value of the voltage V ₁ to be finally applied was 30 kV. In the second voltage application step, the value of the voltage applied to the second electrode is V ₂ volts (> 0 volt), and the value of the voltage applied to the first electrode is O volt, and the initial voltage V ₂ is set to a value. to 0.1kV, the voltage increase amount O.01kV, time for applying the voltage in each phase one second has the value of the voltage V ₂ which finally applied to the 1OkV. The voltage V _1, V ₂ shows the change in schematically in Fig.
[127] After the knocking process was performed on the display device as described above, the actual operating voltage V _OP was applied to the short-circuited cathode electrode and the gate electrode, and the anode electrode was set at 0 volts to measure the current flowing therebetween, but no current flowed. . Moreover, although the actual operating voltage _VOP was applied to the anode electrode and the shorted cathode electrode and the gate electrode were 0 volts, the current flowing therebetween was measured, but no current flowed. In other words, it was confirmed that the projections present in the first electrode and the second electrode (especially the gate electrode) could be removed by electric field evaporation. In addition, the same knocking processing method was performed for the configuration of (2) and (4) described above, and the same result was obtained.
[128] (Example 3)
[129] Embodiment 3 relates to a substrate knocking processing method in a substrate for a flat panel display according to a first aspect of the present invention. That is, the substrate knocking processing method of Example 3 relates to the knocking processing method during the manufacture of the flat panel display device (before assembly of the flat panel display device), wherein the substrate for the flat panel display device on which the substrate electrode is formed and the electrode for knocking are provided. After the formed knocking substrate is disposed with a vacuum space therebetween, a voltage V ₁ higher than that of the knocking electrode is applied stepwise to the substrate electrode, so that the projections present on the substrate electrode are evaporated.
[130] The flat panel display according to the third embodiment is a cold cathode field emission display device (display device), and the anode electrode provided in the anode panel corresponds to the substrate electrode formed on the substrate. That is, it has the structure of (7) mentioned above. Further, the display device has a structure including a plurality of spin type field emission devices shown in FIGS. 7 and 8.
[131] The outline of the knocking processing apparatus 30 suitable for implementation of the board | substrate knocking processing method of Example 3 is shown in FIG. This knocking processing apparatus 30 includes a housing 31 with an upper portion opened. In the housing 31, an inspection table 32 is disposed, and an inspection table lifting cylinder 33 is mounted below the inspection table 32. The test bench elevating cylinder 33 is mounted on a moving seat not shown and is movable in the vertical direction of the ground of FIG. 3 for each test bench 32. Below the test stand 32, a pin lift cylinder 34 is mounted, and the pin 35 moves up and down in the hole penetrating the test stand 32 by the operation of the pin lift cylinder 34. The housing 31 is connected to the vacuum pump (not shown) via the valve 37, and can make the atmosphere of the housing 31 high vacuum. In the housing 31, a voltage application needle 38 having a structure capable of contacting the end of the anode electrode is also disposed. In the case of performing the substrate knocking processing method on the cathode panel, for example, the number of voltage applying needles 38 having a structure capable of contacting the ends of the cathode electrode and the gate electrode is arranged.
[132] A knocking substrate 40 having a knocking electrode 42 formed on the glass substrate 41 is disposed above the housing 31. The power supply 43 is connected to the voltage application needle 38 and the knocking electrode 42.
[133] In the substrate knocking process of the board | substrate 44, after loading the board | substrate 44 mounted in the test stand 32 into the housing 31 through the door (not shown) provided in the housing 31, the housing 31 is carried out. ) The inside is made into a high vacuum atmosphere by a vacuum pump. The value of the pressure in the housing 31 is measured by the pressure gauge 36.
[134] When the housing 31 is in a desired atmosphere, the test bench lift cylinder 33 is operated to raise the test bench 32 to set the distance between the substrate 44 and the knocking substrate 40 to be 1 mm, for example. In addition, the voltage application needle 38 is brought into contact with the end of the anode electrode. Then, the voltage V ₁ is applied from the power supply 43 to the anode electrode via the voltage application needle 38, and 0 volt is applied to the knocking electrode. After the substrate knocking process, the atmosphere in the housing 31 is the atmosphere, the test bench lift cylinder 33 is operated, the test bench 32 is lowered, and the test bench 32 on which the substrate 44 is mounted is mounted on the housing 31. We export from).
[135] Applied while increasing the voltage V ₁ higher than the electrode for knocking on a substrate electrode in a stepwise manner to indicate a change in the voltage V ₁ at the time sikyeoteul field evaporation of the protrusions existing on the substrate electrode (anode electrode) schematically in Fig. In the substrate knocking processing method of Example 3, the voltage applied to the substrate electrode (anode electrode) is set to V ₁ volt (> 0 volt), and the voltage applied to the knocking electrode is set to 0 volt. to the value of the voltage V ₁ 1kV, a voltage increase time of applying the O.01kV, the voltage at each step one second, had a value of a voltage V ₁ that ultimately applied to the 30kV.
[136] As described above, after the substrate knocking processing method was performed on the anode panel, the actual operating voltage V _OP was applied to the knocking electrode, and the anode electrode was set to 0 volts, and the current flowing therebetween was measured, but no current flowed. That is, it was confirmed that the projections present in the substrate electrode (anode electrode) could be removed by electric field evaporation. Moreover, when the same board knocking processing method was implemented about the structure of (5) and (6) mentioned above, the same result was obtained.
[137] In the knocking processing apparatus shown in Fig. 3, the size of the knocking electrode 42 is approximately equal to that of the anode panel or the cathode panel, but the size of the knocking substrate can be made smaller than that of the anode panel or the cathode panel. . In this case, what is necessary is just to have a structure in which the board | substrate for knocking can scan the upper part of an anode panel and a cathode panel. That is, what is necessary is just to have a structure in which the board | substrate for knocking can move with a guide, for example.
[138] (Example 4)
[139] Embodiment 4 relates to a knocking processing method in a flat panel display device according to a second aspect of the present invention. That is, the knocking processing method of Example 4 relates to the knocking processing method after completion of the flat panel display device, wherein the first substrate on which the first electrode is formed and the second substrate on which the second electrode is formed are disposed with a vacuum space therebetween. This is a knocking processing method in a flat panel display device in which a first substrate and a second substrate are bonded at their peripheral edge portions. Then, a voltage V ₁ higher than that of the second electrode is applied to the first electrode in the form of a pulse so that the projections present on the first electrode are evaporated.
[140] In the knocking processing method of the fourth embodiment, after completion of the pulse voltage application step of applying a pulse type voltage V ₁ higher than the second electrode to the first electrode, the first electrode and the second electrode are set to 0 volts for a predetermined time. after a lapse of, again, to the first electrode than the second electrode and applying a voltage V ₁ of the pulsed high. Then, the voltage V ₁ is increased for each of the plurality of pulses (specifically, every 5 pulses). In addition, in the knocking processing method according to the first aspect of the present invention described in the first embodiment or the second embodiment, in some cases, a discharge may occur between the first electrode and the second electrode during the knocking process. In such a case, it is preferable to employ the knocking processing method according to the second aspect of the present invention because no discharge occurs because the voltage V ₁ is applied in a pulsed form.
[141] A flat panel display device according to the fourth embodiment is a cold cathode field emission display device (display device), and has a structure in which a plurality of spin type field emission devices shown in FIGS. 7 and 8 are provided. The detailed description is omitted.
[142] In Example 4, after the knocking process B is completed with the anode panel as the first substrate and the cathode panel as the second substrate (that is, for the configuration of (8) above), the cathode panel is used as the first substrate. Then, knocking processing A is performed using the anode panel as the second substrate (that is, for the configuration of (1) above). Further, in order not to express a function as a display device, that is, not to emit electrons from the field emission device, the cathode electrode and the gate electrode are shorted to make these electrodes at the same potential.
[143] The voltage V ₁ is applied to the first electrode while increasing in a pulse form at a voltage V ₁ higher than that of the second electrode, and the change in voltage V ₁ when the projections present in the first electrode are evaporated is shown in FIGS. 5A and 5B. It is typically shown in. Here, Fig. 5A shows the change of the voltage V ₁ (voltage applied to the anode electrode) in the knocking process B. In Fig. 5B, the voltage V ₁ (shorted cathode electrode in the knocking process A is shown. And a voltage applied to the gate electrode).
[144] In the knocking processes A and B of the fourth embodiment, the voltage applied to the first electrode is V ₁ volt (> 0 volt), the voltage applied to the second electrode is 0 volt, and the initial voltage V _1. The value (pulse high) was 1 kV, the voltage increase amount was 0.01 kV, the pulse width was 1 microsecond, and the pulse interval was 1 microsecond.
[145] In this manner, after the knocking processing A and B were performed on the display device, the actual operating voltage V _OP was applied to the shorted cathode electrode and the gate electrode, and the anode electrode was set at 0 volts to measure the current flowing therebetween. Did not flow. In addition, although the actual operating voltage _VOP was applied to the anode electrode and the shorted cathode electrode and the gate electrode were O volts, the current flowing therebetween was measured, but no current flowed. In other words, it was confirmed that the projections present in the first electrode could be removed by electroevaporation. Moreover, although the knocking process B was performed after completing the knocking process A, the same result was obtained. Moreover, although the knocking process B was performed after the knocking process A was completed about the structure of (2) mentioned above and the structure of (4), the same result was obtained.
[146] (Example 5)
[147] Example 5 is a variation of Example 4. Embodiment 5, the first electrode of claim After the completion of the pulse voltage application step of applying a voltage V ₁ of a high pulse-like than the second electrode, by applying a first high voltage V ₂ than the first electrode to the second electrode, the first electrode A current detection step of detecting a current flowing between the second electrode and the second electrode is performed. By applying a voltage V ₂ higher than that of the first electrode to the second electrode, a high electric field is applied to the protrusions present on the first electrode, and electrons are emitted from the protrusions by the quantum tunnel effect. It is detected as a current flowing between two electrodes. If the projections are electroevaporated, these currents will not be detected. After the current detection step, the pulse voltage application step is executed again.
[148] In addition, the embodiment 5, when the current flowing between the first electrode and the second electrode to a desired value, or below (Example 5, 0 amps), and a voltage higher voltage than V ₁ to a new voltage V ₁ The voltage higher than the voltage V ₂ is set as the new voltage V ₂ , and the pulse voltage application process and the current detection process are repeated. Embodiment 5, and the number of pulses of the voltage V ₁ of the first pulse voltage application step to the fifth pulse. Further, when the voltage V ₂ becomes equivalent to the actual operating voltage V _OP of the flat panel display device, the current flowing between the first electrode and the second electrode becomes a predetermined value or less (zero amperes in the fifth embodiment). Until the voltage higher than the voltage V ₁ is made a new voltage V ₁ , the voltage V ₂ is repeated as a value corresponding to the actual operating voltage V _OP , and the pulse voltage application process and the current detection process are repeated. After the voltage in becomes a value corresponding to the actual operating voltage V _OP , when the current flowing between the first electrode and the second electrode reaches a predetermined value or less (0 amperes in Example 5), the knocking process is performed. Ends automatically.
[149] In Example 5, after the knocking process B is completed with the anode panel as the first substrate and the cathode panel as the second substrate (that is, for the configuration of (3) above), the cathode panel is used as the first substrate. Then, knocking processing A is performed using the anode panel as the second substrate (that is, for the configuration of (1) above). In addition, in order not to exhibit a function as a display device, that is, not to emit electrons from the field emission device, the cathode electrode and the gate electrode are shorted to make these electrodes at the same potential.
[150] In the knocking processes A and B of the fifth embodiment, in the pulse voltage application step, the voltage value applied to the first electrode is set to V ₁ volt (> 0 volt), and the value applied to the second electrode is set to 0 volts. In the current detection step, the value of the voltage applied to the second electrode is 0 volts, and the value of the voltage applied to the first electrode is -V ₂ volts (<0). The initial voltage V ₁ value (pulse high) is 1 kV, the initial voltage -V ₂ value is -0.1 kV, the voltage increase amount of voltage V ₁ is 0.01 kV, the pulse width is 1 microsecond, and the pulse interval is set. 1 microsecond, and the absolute value of the voltage variation of the voltage V ₂ to O.O1kV.
[151] The voltage V _1, V ₂ shows the change in schematically in Fig. 6 shows a change in voltages V ₁ and V ₂ (voltage applied to the anode electrode) in the knocking process B, while voltages V ₁ and V ₂ (shorted cathode and gate electrodes in the knocking process A are shown. The change of the applied voltage) may be the same.
[152] In this manner, after the knocking processing A and B were performed on the display device, the actual operating voltage V _OP was applied to the shorted cathode electrode and the gate electrode, and the anode electrode was set at O volt, and the current flowing therebetween was measured. Did not flow. Moreover, although the actual operating voltage _VOP was applied to the anode electrode and the shorted cathode electrode and the gate electrode were 0 volts, the current flowing therebetween was measured, but no current flowed. In other words, it was confirmed that the projections present in the first electrode could be removed by electroevaporation. Moreover, although the knocking process B was performed after completing the knocking process A, the same result was obtained.
[153] Moreover, the knocking processing method of Example 5 was performed by alternately swapping a 1st board | substrate and a 2nd board | substrate. In other words, after applying a plurality of pulses of a pulse type voltage V ₁ higher than the second electrode to the first electrode, the first substrate and the second substrate were exchanged, and the operation of performing this operation was repeated. Thereby, the same result was obtained. Moreover, although the knocking process A was performed with respect to the structure of (2) and (4) mentioned above, the same result was obtained.
[154] (Example 6)
[155] Embodiment 6 relates to a substrate knocking processing method in a substrate for a flat panel display according to a second aspect of the present invention. That is, the substrate knocking processing method of the sixth embodiment relates to a knocking processing method during manufacture of a flat panel display device (before assembly of the flat panel display device), wherein the substrate for a flat panel display device on which the substrate electrode is formed and the electrode for knocking are provided. After the formed knocking substrate is disposed with the vacuum space interposed therebetween, the substrate electrode is applied with a voltage V ₁ higher than that of the knocking electrode in a pulsed form, to thereby evaporate the projections present on the substrate electrode. In the substrate knocking processing method according to the first aspect of the present invention described in the third embodiment, in some cases, a discharge may occur between the substrate electrode and the knocking electrode during the knocking process. In such a case, it is preferable to employ the substrate knocking processing method according to the second aspect of the present invention because no discharge occurs because the voltage V ₁ is applied in a pulsed form.
[156] The flat panel display according to the sixth embodiment is a cold cathode electron emission display device (display device), and the anode electrode provided in the anode panel corresponds to the substrate electrode formed on the substrate. In addition, the display device has a structure including a plurality of spin type field emission devices shown in FIGS. 7 and 8.
[157] Since the knocking processing apparatus suitable for the implementation of the substrate knocking processing method of the sixth embodiment may be the same as the knocking processing apparatus 30 shown in FIG. 3, detailed description thereof will be omitted.
[158] After applying 5 pulses of voltage V ₁ higher than the knocking electrode to the substrate electrode, the operation of increasing the voltage V ₁ is repeated to cause the projections present on the substrate electrode (anode electrode) to evaporate. Change of the voltage V ₁ at this time, if it is the same as that shown schematically in Figure 5 (A). In the substrate knocking processing method of Example 6, the voltage applied to the substrate electrode (anode electrode) is V ₁ volt (> 0 volt), and the voltage applied to the knocking electrode is O volt. value (pulse high) of the voltage V _1, the 1kV, the voltage increase amount 0.01kV, 1 microsecond, the pulse width, and the second interval of one microsecond pulse.
[159] As described above, after the substrate knocking treatment method was applied to the anode panel, the actual operating voltage V _OP was applied to the knocking electrode, and the anode electrode was set at 0 volts to measure the current flowing therebetween, but no current flowed. That is, it was confirmed that the projections present in the substrate electrode (anode electrode) could be removed by electric field evaporation. Moreover, when the board knocking processing method was implemented about the structure of (5) and the structure of (6) mentioned above, the same result was obtained.
[160] In the knocking processing apparatus shown in Fig. 3, the size of the knocking electrode 42 is approximately equal to that of the anode panel or the cathode panel, but the size of the knocking substrate can be made smaller than that of the anode panel or the cathode panel. . In this case, what is necessary is just to have a structure in which the board | substrate for knocking can scan the upper part of an anode panel and a cathode panel. That is, what is necessary is just to have a structure in which the board | substrate for knocking can move along a guide, for example.
[161] (Example 7)
[162] Example 7 is a variation of Example 6. In Example 7, after the completion of the pulse voltage application step in which the substrate electrode applies a pulse type voltage V ₁ higher than that of the knocking electrode, a voltage V ₂ higher than the substrate electrode is applied to the knocking electrode so that the substrate electrode and the knocking electrode are applied. A current detection step of detecting a current flowing between the electrodes is performed. By applying a voltage V ₂ higher than the substrate electrode to the knocking electrode, a high electric field is applied to the projections present on the substrate electrode, and electrons are emitted from the projections by the quantum tunnel effect, and these electrons flow between the substrate electrode and the knocking electrode. It is detected as a current. If the projections are electroevaporated, these currents will not be detected. After the current detection step, the pulse voltage application step is executed again.
[163] In the seventh embodiment, when the current flowing between the substrate electrode and the knocking electrode becomes a predetermined value or less (zero amperes in the seventh embodiment), a voltage higher than the voltage V ₁ is set as a new voltage V ₁ , The voltage higher than the voltage V ₂ is set as the new voltage V ₂ , and the pulse voltage application process and the current detection process are repeated. 7 embodiment, and the number of pulses of the voltage V ₁ of the first pulse voltage application step to the fifth pulse. Further, when the voltage V ₂ is equivalent to the actual operating voltage V _OP of the flat panel display device, when the current flowing between the substrate electrode and the knocking electrode reaches a predetermined value or less (zero amperes in the seventh embodiment), The pulse voltage application process and the current detection process are repeated until the voltage higher than the voltage V ₁ is the new voltage V ₁ , and the voltage V ₂ is the value corresponding to the actual operating voltage V _OP . After the voltage V ₂ becomes a value corresponding to the actual operating voltage V _OP , when the current flowing between the substrate electrode and the knocking electrode reaches a predetermined value or less (0 amperes in Example 7), the knocking process is performed. Ends automatically.
[164] In Example 7, the substrate knocking processing method was performed using the anode panel as the substrate (that is, the configuration of (7) above).
[165] In the substrate knocking processing method of the seventh embodiment, in the pulse voltage application step, the voltage applied to the substrate electrode is V ₁ volt (> 0 volt), the voltage applied to the knocking electrode is 0 volt, and the current is In the detection step, the voltage applied to the knocking electrode is 0 volts, and the voltage applied to the substrate electrode is -V ₂ volts (<0). The initial voltage V ₁ value (pulse high) is 1 kV, the initial voltage -V ₂ value is -0.1 kV, the voltage increase amount of voltage V ₁ is 0.01 kV, the pulse width is 1 microsecond, and the pulse interval is set. 1 microsecond, and the absolute value of the voltage variation of the voltage V ₂ to O.O1kV. Further, the voltage V _1, V ₂ of the change, may be the same as that shown schematically in Fig.
[166] Thus, after performing the substrate knocking processing method, the actual operating voltage _VOP was applied to the shorted knocking electrode, and the anode electrode was made 0 volts, and the current flowing therebetween was measured, but the current did not flow. That is, it was confirmed that the substrate electrode (the projections present in the anode electrode could be removed by electric field evaporation. Further, the substrate knocking processing method was performed for the configuration of (5) and (6) described above. The result was obtained.
[167] (Example 8)
[168] Hereinafter, various field emission devices will be described.
[169] When the flat panel display device is a cold cathode electron emission display device, the cathode panel includes a plurality of field emission devices,
[170] The field emission device,
[171] (A) a first support,
[172] (B) a cathode electrode formed on the first support,
[173] (C) an insulating layer formed on the first support and the cathode electrode,
[174] (D) a gate electrode formed on the insulating layer,
[175] (E) openings penetrating through the gate electrode and the insulating layer;
[176] (F) electron-emitting electrodes formed on portions of the cathode electrodes located at the bottom of the openings;
[177] Made of
[178] The electron emitting electrode exposed at the bottom of the opening can have a structure corresponding to the electron emitting portion.
[179] In addition, such a structure is called the field emission element which has a 1st structure for convenience. As a type of the field emission device, the above-described spin type (cone-type electron emission electrode is formed on the portion of the cathode electrode positioned at the bottom of the opening, and the crown type (crown type electron emission electrode is the Field emission elements formed on the portion of the cathode electrode located at the bottom; and flat (field emission elements formed on the portion of the cathode electrode disposed at the bottom of the opening).
[180] In addition, the cathode panel includes a plurality of field emission devices,
[181] The field emission device,
[182] (A) a first support,
[183] (B) a cathode electrode formed on the first support,
[184] (C) an insulating layer formed on the first support and the cathode electrode,
[185] (D) a gate electrode formed on the insulating layer,
[186] (E) an opening formed through the gate electrode and the insulating layer and having a cathode electrode exposed at the bottom thereof;
[187] The portion of the cathode electrode exposed to the bottom of the opening portion can have a structure corresponding to the electron emission portion.
[188] In addition, such a structure is called the field emission element which has a 2nd structure for convenience. Examples of such a field emission device include a planar field emission device that emits electrons from the surface of the flat cathode electrode, and a crater type field emission device that emits electrons from the convex portion of the surface of the cathode electrode on which the unevenness is formed.
[189] In addition, the cathode panel includes a plurality of field emission devices,
[190] The field emission device,
[191] (A) a first support,
[192] (B) a cathode electrode formed above the first support and having an edge portion;
[193] (C) at least an insulating layer formed on the cathode electrode,
[194] (D) a gate electrode formed on the insulating layer,
[195] (E) consists of at least an opening penetrating through the gate electrode and the insulating layer,
[196] The edge portion of the cathode electrode exposed on the bottom or sidewall of the opening portion can have a structure corresponding to the electron emission portion.
[197] In addition, such a structure is called the field emission element or edge type field emission element which has a 3rd structure for convenience.
[198] In addition, the cathode panel includes a plurality of field emission devices,
[199] The field emission device,
[200] (A) a band-shaped gate electrode support portion made of an insulating material disposed on the first support,
[201] (B) a gate electrode made of a band-like material layer having a plurality of openings, and
[202] (C) consisting of an electron-emitting unit;
[203] (D) The band-like material layer may be formed so as to contact the top surface of the gate electrode support portion and the opening portion to be positioned above the electron emission portion.
[204] In addition, such a structure is called the field emission element which has a 4th structure for convenience. As the electron emission unit in the field emission device having the fourth structure, various electron emission electrodes and the electron emission unit in the field emission device having the first to third structures can be applied.
[205] Tungsten (W), niobium (Nb), tantalum (Ta) as a material constituting the gate electrode in the field emission device having the first structure, the second structure, or the third structure, and as a material constituting the convergence electrode , Titanium (Ti), molybdenum (Mo), chromium (Cr), aluminum (Al), copper (Cu), gold (Au), silver (Ag), nickel (Ni), cobalt (Co), zirconium (Zr) At least one metal selected from the group consisting of iron (Fe), platinum (Pt), and zinc (Zn); Alloys or compounds containing these metal elements (for example, nitrides such as TiN and silicides such as WSi ₂ , MoSi ₂ , TiSi ₂ , TaSi ₂ ); Or semiconductors such as silicon (Si); Conductive metal oxides, such as ITO (indium tin oxide), indium oxide, and zinc oxide, can be illustrated. The gate electrode and the converging electrode are manufactured by known thin film forming techniques such as CVD, sputtering, vapor deposition, ion plating, electroplating, electroless plating, screen printing, laser ablation, and sol-gel. A thin film made of the above-mentioned constituent materials is formed on the insulating layer. When the thin film is formed on the entire surface of the insulating layer, the thin film is patterned by using a known patterning technique to form a stripe gate electrode. After the formation of the striped gate electrode, an opening may be formed in the gate electrode, or an opening may be formed in the gate electrode simultaneously with the formation of the striped gate electrode. If a resist pattern is formed on the insulating layer before forming the conductive material layer for the gate electrode, the gate electrode can be formed by the lift-off method. Further, if vapor deposition is performed using a mask having an opening corresponding to the shape of the gate electrode, or screen printing is performed using a screen having such an opening, patterning after film formation becomes unnecessary. In addition, a band material layer having an opening is prepared in advance, and the band material layer is fixed on the gate electrode support, whereby a gate electrode can be provided, whereby a field emission device having a fourth structure can be obtained.
[206] In the field emission device having the first structure composed of the spin type field emission device, as the material constituting the electron emission electrode, tungsten, tungsten alloy, molybdenum, molybdenum alloy, titanium, titanium alloy, niobium, niobium alloy, tantalum, tantalum alloy And at least one material selected from the group consisting of chromium, chromium alloys, and silicon containing impurities (polysilicon or amorphous silicon).
[207] In the field emission device having the first structure composed of the crown type field emission device, examples of the material constituting the electron emission electrode include conductive particles or a combination of conductive particles and a binder. As electroconductive particle, Carbon type materials, such as graphite; High melting point metals such as tungsten (W), niobium (Nb), tantalum (Ta), titanium (Ti), molybdenum (Mo), and chromium (Cr); Or transparent conductive materials such as ITO indium tin oxide). As the binder, for example, a general-purpose resin such as water glass can be used. Examples of general-purpose resins include thermoplastic resins such as vinyl chloride resin, polyolefin resin, polyamide resin, cellulose ester resin, and fluorine resin, and thermosetting resins such as epoxy resin, acrylic resin, and polyester resin. Can be. In order to improve the electron emission efficiency, it is preferable that the particle diameter of the conductive particles is sufficiently small compared with the dimensions of the electron emission electrode. Although the shape of electroconductive particle is not specifically limited, such as spherical shape, a polyhedron, plate shape, needle shape, columnar shape, an indefinite shape, etc., It is preferable that it is a shape in which the exposed part of electroconductive particle may become a pointed protrusion. Electroconductive particle from which a dimension and a shape differs can also be mixed and used.
[208] In the field emission device having the first structure composed of the flat field emission device, it is preferable that the material constituting the electron emission electrode is composed of a material having a work function Φ smaller than the material constituting the cathode electrode, and which material is selected. What is necessary is just to determine according to the work function of the material which comprises a cathode electrode, the potential difference between a gate electrode and a cathode electrode, the magnitude | size of the emitted electron current density, etc. Typical materials constituting the cathode electrode in the field emission device include tungsten (Φ = 4.55 eV), niobium (Φ = 4.02 to 4.87 eV), molybdenum (Φ = 4.53 to 4.95 eV), aluminum (Φ = 4.28 eV), Copper (Φ = 4.6 eV), tantalum (Φ = 4.3 eV), chromium (Φ = 4.5 eV), and silicon (Φ = 4.9 eV) can be exemplified. It is preferable that the electron-emitting electrode has a work function Φ smaller than these materials, and its value is preferably about 3 eV or less. As such a material, carbon (Φ <1 eV), cesium (Φ = 2.14 eV), LaB ₆ (Φ = 2.66 to 2.76 eV), BaO (Φ = 1.6 to 2.7 eV), SrO (Φ = 1.25 to 1.6 eV), Y ₂ 0 ₃ (Φ = 2.0 eV), CaO (Φ = 1.6 to 1.86 eV), BaS (Φ = 2.05 eV), TiN (Φ = 2.92 eV), ZrN (Φ = 2.92 eV). It is further preferable that the electron-emitting electrode is made of a material having a work function Of 2 eV or less. In addition, the material which comprises an electron emission electrode does not necessarily need to have electroconductivity.
[209] Particularly preferred constituent materials of the electron-emitting electrode include carbon, more specifically diamond, and amorphous diamond. When the electron-emitting electrode is made of amorphous diamond, the emission electron current density required for the display device can be obtained at an electric field strength of 5 x 10 ⁷ V / m or less. In addition, since the amorphous diamond is an electrical resistor, the emission electron current obtained from each electron-emitting electrode can be made uniform, and therefore, the luminance deviation in the case of being incorporated into the display device can be suppressed. In addition, since amorphous diamond has a very high resistance to sputtering action by ions of residual gas in the display device, the lifespan of the field emission device can be extended.
[210] Further, in the field emission device having the first structure composed of the flat field emission device, as the material constituting the electron emission electrode, the secondary electron gain δ of such material is higher than the secondary electron gain δ of the conductive material constituting the cathode electrode. You may select suitably from the material made to become large. That is, silver (Ag), aluminum (A1), gold (Au), cobalt (Co), copper (Cu), molybdenum (Mo), niobium (Nb), nickel (Ni), platinum (Pt), tantalum (Ta) ), Metals such as tungsten (W) and zirconium (Zr); Semiconductors such as silicon (Si) and germanium (Ge); Inorganic groups such as carbon and diamond; And aluminum oxide (A1 ₂ O ₃ ), barium phosphorus (BaO), beryllium oxide (Be0), calcium oxide (Ca0), magnesium oxide (MgO), tin oxide (SnO ₂ ), barium fluoride (BaF ₂ ), fluoride among the compounds, such as calcium (CaF _2), it can be appropriately selected. In addition, the material which comprises an electron emission electrode does not necessarily need to have electroconductivity.
[211] In the field emission device (planar field emission device or crater type field emission device) having the second structure, or the field emission device (edge type field emission device) having the third structure, the cathode electrode corresponding to the electron emission unit is formed. Materials include tungsten (W), tantalum (Ta), niobium (Nb), titanium (Ti), molybdenum (Mo), chromium (Cr), aluminum (A1), copper (Cu), gold (Au), and silver ( Metals such as Ag), alloys or compounds thereof (for example, nitrides such as TiN, silicides such as WSi ₂ , MoSi ₂ , TiSi ₂ , TaSi ₂ ), semiconductors such as diamond, and carbon thin films can be exemplified. . The thickness of the cathode electrode is preferably in the range of approximately 0.05 to 0.5 탆, preferably 0.1 to 0.3 탆, but is not limited to this range. Examples of the method for forming the cathode electrode include a vapor deposition method such as an electron beam deposition method and a hot filament deposition method, a sputtering method, a combination of a CVD method, an ion plating method and an etching method, a screen printing method, and a plating method. According to the screen printing method or the plating method, it is possible to form a striped cathode electrode directly.
[212] In addition, in the field emission device having a first structure consisting of a second structure (planar field emission device or crater type field emission device), a field emission device having a third structure (edge type field emission device), or a flat field emission device, The cathode electrode and the electron-emitting electrode may be formed using a conductive paste in which conductive fine particles are dispersed. As electroconductive fine particles, Graphite powder; Graphite powder in which at least one of barium oxide powder, strontium oxide powder and metal powder is mixed; diamond particles or diamond-like carbon powder containing impurities such as nitrogen, phosphorus, boron and triazole; Carbon nano tube powder; (Sr, Ba, Ca) CO ₃ powder; Silicon carbide powder can be illustrated. In particular, it is preferable to select graphite powder as the conductive fine particles from the viewpoint of reducing the critical electric field and durability of the electron emitting portion. The shape of electroconductive fine particles can be made into arbitrary fixed shape or indefinite shape other than spherical shape and flaky shape. The particle diameter of the conductive fine particles may be equal to or less than the thickness and pattern width of the cathode electrode and the electron-emitting electrode. The smaller the particle size can increase the number of emission electrons in unit area contact,
[213] If too small, the conductivity of the cathode electrode or the electron-emitting electrode may be deteriorated. Therefore, the range of a preferable particle diameter is about 0.01-4.0 micrometers. The conductive fine particles are mixed with a suitable binder such as a glass component to prepare a conductive paste, and a desired pattern is formed by screen printing using the conductive face, and then the pattern is fired to serve as a cathode electrode serving as an electron emitting portion, An electron emitting electrode can be formed. Alternatively, a cathode electrode or an electron emitting electrode that functions as an electron emitting portion may be formed by a combination of a spin coating method and an etching technique and a lift off method.
[214] In addition, in the field emission device having the first structure composed of a spin type field emission device or a crown type field emission device, the material constituting the cathode electrode is tungsten (W), niobium (Nb), tantalum (Ta), molybdenum ( Metals such as Mo), chromium (Cr), aluminum (A1), and copper (Cu); Examples of alloys or compounds containing these metal elements (for example, nitrides such as TiN, silicides such as WSi ₂ , MoSi ₂ , TiSi ₂ , TaSi ₂ , semiconductors such as silicon (Si); or ITO indium tin oxide) can do. Examples of the method for forming the cathode include a vapor deposition method such as an electron beam deposition method and a hot filament deposition method, a sputtering method, a combination of a CVD method, an ion plating method and an etching method, a screen printing method, a plating method, a lift-off method and the like. According to the screen printing method or the plating method, it is possible to form a striped cathode electrode directly.
[215] What is necessary is just to select the constituent material of an anode electrode suitably according to the structure of a display apparatus. That is, when the display device is a transmissive type (the anode panel corresponds to the display surface), and the anode electrode and the phosphor layer are laminated in this order on the second support, the second support is originally made of the anode electrode itself. It is necessary to be transparent, and transparent conductive materials such as ITO indium tin oxide) are used. On the other hand, in the case where the display device is a reflective type (cathode panel corresponds to the display surface) and a transmissive type, when the phosphor layer and the anode electrode are stacked in this order on the second support, the cathode or gate electrode may be provided in addition to ITO. The above-mentioned materials may be appropriately selected and used.
[216] The anode electrode may be an anode electrode in which the effective area is covered with a sheet-like conductive material, and the anode electrode unit corresponding to one or a plurality of electron emitting portions or one or a plurality of pixels is assembled. It may be an anode electrode.
[217] As the phosphor constituting the phosphor layer, a phosphor for high-speed electron excitation or a phosphor for low-speed electron excitation can be used. In the case where the display device is a monochrome display device, the phosphor layer does not have to be particularly patterned. In the case where the display device is a color display device, it is preferable to alternately arrange phosphor layers corresponding to three primary colors of red (R), green (G), and blue (B) patterned in a stripe or dot shape. The gap between the patterned phosphor layers may be filled with a black matrix for the purpose of improving the contrast of the display screen.
[218] As an example of the configuration of the anode electrode and the phosphor layer, (1) a structure in which an anode electrode is formed on the second support, and a phosphor layer is formed on the anode electrode, and (2) a phosphor layer is formed on the second support. And a configuration of forming an anode electrode on the phosphor layer. In addition, in the structure of (1), what is called a metal white film electrically conductive with an anode electrode can also be formed on a fluorescent substance layer. In addition, in the structure of (2), a metal back film may be formed on the anode electrode.
[219] It is preferable from the viewpoint of simplifying the structure of the display device that the projection image of the stripe-type gate electrode and the projection image of the stripe-type cathode electrode extend in a direction perpendicular to each other. Further, an electron emission unit (one or a plurality of field emission devices) is formed in an overlapping region (corresponding to one pixel area or one subpixel area) in which the projection of the striped cathode electrode and the striped gate electrode overlaps. Is formed, and these overlapping areas are normally arranged in a two-dimensional matrix in the effective area of the cathode panel (area serving as an actual display screen).
[220] In the field emission device having the first structure to the third structure, the planar shape of the opening (the shape when the opening is cut in the virtual plane parallel to the first support surface) is circular, elliptical, rectangular, polygonal, and rounded. It can be set as arbitrary shapes, such as a rectangle and a rounded polygon. The opening can be formed by, for example, a combination of isotropic etching, anisotropic etching and isotropic etching. One opening may be formed in the gate electrode, one opening in communication with one opening formed in the gate electrode may be formed in the insulating layer, and one or a plurality of electron emission electrodes may be formed in the opening formed in the insulating layer. A plurality of openings are formed in the gate electrode, one opening communicating with the plurality of openings formed in the gate electrode is formed in the insulating layer, and one or a plurality of electron emission electrodes are formed in one opening formed in the insulating layer. You may.
[221] As a constituent material of the insulating layer, SiO ₂ , SiN, SiON, SOG (spin-on glass), low melting glass, and glass paste may be used alone or in combination as appropriate. For formation of the insulating layer, known processes such as CVD method, coating method, sputtering method and screen printing method can be used.
[222] The gate electrode support part which consists of an insulating layer can also be formed in a partition type. In this case, the barrier rib-type gate electrode support portion is formed in an area between adjacent stripe type cathode electrodes or in an area between adjacent cathode electrode groups when a plurality of cathode electrodes are used as a group of cathode electrodes. Just do it. Conventionally well-known insulating materials can be used as a material which comprises a partition type gate electrode support part, For example, the material which mixed metal oxides, such as alumina, with the low melting glass which is widely used can be used. As a method of forming the partition type gate electrode support, a screen printing method, a sand blast method, a dry film method, and a photosensitive method can be exemplified. The dry film method is a material for forming a gate electrode support portion by laminating a photosensitive film on a first support, removing a photosensitive film at a portion to form a partition-type gate electrode support portion by exposure and development, and removing the photosensitive film at an opening formed by the removal. It is a method of embedding and firing. The photosensitive film is burned and removed by firing, and the material for forming the gate electrode support portion embedded in the opening remains to become a partition-type gate electrode support portion. The photosensitive method is a method of forming a gate electrode support part forming material having photosensitivity on a first support, patterning the gate electrode support part forming material by exposure and development, and then firing. A band-shaped gate electrode support portion made of an insulating material in the field emission device having the fourth structure can be formed in this manner.
[223] A resistor layer may be formed between the cathode electrode and the electron emission electrode. In addition, when the surface of the cathode electrode or the edge portion thereof corresponds to the electron emitting portion, the cathode electrode may have a three-layer configuration of a conductive material layer, a resistor layer, and an electron emitting layer corresponding to the electron emitting portion. By forming the resistor layer, it is possible to stabilize the operation of the field emission device and to uniformize the electron emission characteristics. As the material constituting the resistor layer, a carbon-based material such as silicon carbide (SiC), semiconductor materials such as SiN and amorphous silicon, and high melting point metal oxides such as ruthenium oxide (RuO ₂ ), tantalum oxide, and tantalum nitride can be exemplified. have. As a method of forming the resistor layer, a sputtering method, a CVD method or a screen printing method can be exemplified. The resistance value may be approximately 1 × 10 ^{5 to} 1 × 10 ⁷ Ω, preferably several MΩ.
[224] The converging electrode may be a converging electrode of a type in which the effective area is covered with one sheet of conductive material, and the converging electrode unit corresponding to one or a plurality of electron emitting portions or one or a plurality of pixels is assembled. It may be a convergence electrode. The converging electrode is an electrode for converging the trajectory of the emitted electrons from the electron emitting portion to the electron irradiation surface of the anode panel, thereby enabling improvement of luminance and prevention of optical crosstalk between adjacent pixels. A relative negative voltage is applied to the convergence electrode. The converging electrode may be formed integrally with the electron emitting portion, or may be formed separately from the electron emitting portion. In the converging electrode, an opening for passing the electrons emitted from the electron emitting portion should be formed. However, one opening may be formed corresponding to one electron emitting portion, and one opening may be formed corresponding to the plurality of electron emitting portions. It may be.
[225] As for the 1st support body which comprises a cathode panel or the 2nd support body which comprises an anode panel, at least the surface should just be comprised by the insulating member, The glass substrate, the glass substrate in which the insulating film was formed in the surface, the quartz substrate, and the quartz in which the insulating film was formed in the surface And a semiconductor substrate having an insulating film formed on the substrate and the surface thereof.
[226] When joining a cathode panel and an anode panel in an edge part, joining may be performed using an adhesive layer, or may be performed using a frame made of insulating rigid materials, such as glass and ceramics, and an adhesive layer together. In the case of using the frame and the adhesive layer together, by appropriately selecting the height of the frame, the distance between the cathode panel and the anode panel can be set longer than in the case of using only the adhesive layer. Moreover, although the frit glass is common as a constituent material of an adhesive layer, what is called a low melting metal material with a melting point of about 20-400 degreeC can also be used. As such a low melting metal material, In (indium: melting | fusing point 157 degreeC); Indium gold-based low melting alloys; Tin (Sn) -based high temperature solders such as Sn ₈₀ Ag ₂₀ (melting point 220 to 370 ° C) and Sn ₉₅ Cu ₅ (melting point 227 to 370 ° C); Lead (Pb) high temperature solders such as Pb _97.5 Ag _2.5 (melting point 304 ° C.), Pb _94.5 Ag _5.5 (melting point 304 to 365 ° C.), Pb _97.5 Ag _1.5 Sn _1.0 (melting point 309 ° C.); Zn ₉₅ Al ₅ (zinc-based high temperature solder such as melting point of 380 ° C .; tin-lead standard solder such as Sn ₅ Pb ₉₅ (melting point of 3OO to 314 ° C.) and Sn ₂ Pb ₉₈ (melting point of 316 to 322 ° C.); Au Examples of the material such as ₈₈ Ga ₁₂ (melting point 381 ° C) (the above subscripts all represent atomic%) can be exemplified.
[227] In the case of joining the three members of the cathode panel, the anode panel and the frame, the three characters may be joined at the same time, or in the first step, the frame is joined with either the cathode panel or the anode panel, and in the second step, the cathode panel or the anode The frame can also be joined to the other side of the panel. When the three-way simultaneous joining or the joining in the second step is performed in a high vacuum atmosphere, the space surrounded by the cathode panel, the anode panel, the frame, and the adhesive layer becomes a vacuum at the same time as the joining. Alternatively, the space enclosed by the cathode panel, the anode panel, the frame, and the adhesive layer may be evacuated after completion of the bonding of the three characters. When exhausting after joining, the pressure in the atmosphere at the time of joining may be either atmospheric pressure or reduced pressure, and the gas constituting the atmosphere may be air, or a gas belonging to nitrogen gas or group 0 of the periodic table (for example, Ar gas). Inert gas containing) may be used.
[228] When exhausting after joining, exhausting can be performed through the chip tube previously connected to the cathode panel and / or the anode panel. The chip tube is typically constructed using a glass tube, joined using frit glass or the above-mentioned low melting point metal material around the penetration portion provided in the ineffective region of the cathode panel and / or the anode panel, and the space has a predetermined degree of vacuum. After reaching, it is sealed and cut by heat fusion. In addition, it is preferable to heat the entire display device and then lower the temperature before sealing and cutting, since residual gas can be released into the space and the residual gas can be removed out of the space by exhaust.
[229] [Spint Field Emission Device]
[230] A schematic partial cross-sectional view of a field emission device having a first structure composed of a spin type field emission device is shown in FIG. 10B. The spin type field emission device includes a cathode electrode 12 formed on the first support 11, an insulation layer 13 formed on the first support 11 and the cathode electrode 12, and an insulation layer 13. Conical electrons formed on the gate electrode 14 formed thereon, the opening 15 penetrating the gate electrode 14 and the insulating layer 13, and the cathode electrode 12 located at the bottom of the opening 15. It consists of the discharge electrode 16A. The conical electron emitting electrode 16A exposed at the bottom of the opening 15 corresponds to the electron emitting portion 16.
[231] The manufacturing method of the spin type field emission device is basically a method of forming a conical electron emission electrode 16A by vertical deposition of a metal material. That is, the amount of deposited particles that reach the bottom of the opening 15 by using the blocking effect of the overhang-type deposits formed in the vicinity of the opening 15, although the deposition particles are incident perpendicularly to the opening 15. Is gradually reduced, and the electron-emitting electrode 16A, which is a conical deposit, is formed in a self-aligning manner.
[232] Here, in order to facilitate the removal of unnecessary overhang deposits, a schematic partial cross-sectional view of a first support body or the like for a method of forming the release layer 17 on the insulating layer 13 and the gate electrode 14 in advance. It demonstrates with reference to FIG. 9 (A), (B) and FIG. 10 (A), (B).
[233] [Process -100]
[234] First, for example, a stripe type cathode electrode 12 made of niobium (Nb) is formed on a first support 11 made of a glass substrate, and then an insulating layer 13 made of SiO ₂ is formed on the entire surface. In addition, a gate electrode 14 is formed on the insulating layer 13. The gate electrode 14 can be formed by, for example, a sputtering method, a lithography technique, or a dry etching technique. Next, the opening 15 is formed in the gate electrode 14 and the insulating layer 13 by the RIE (reactive ion etching) method, and the cathode electrode 12 is exposed at the bottom of the opening 15 (Fig. 9). (A)). The cathode electrode 12 may be a single material layer or may be constituted by stacking a plurality of material layers. For example, in order to reduce the nonuniformity of the electron emission characteristic of each electron emission electrode formed in a later step, the surface layer portion of the cathode electrode 12 can be made of a material having a higher electrical resistivity than the remainder.
[235] [Process-110]
[236] Next, the electron emission electrode 16A is formed on the cathode electrode 12 exposed at the bottom of the opening 15. Specifically, first, the exfoliation layer 17 is formed by obliquely depositing aluminum. At this time, by selecting the incident angle of the deposition particles with respect to the normal of the first support 11 sufficiently large, almost no aluminum is deposited on the bottom of the opening 15 and on the gate electrode 14 and the insulating layer 13. The release layer 17 can be formed. The peeling layer 17 extends elongately from the opening end part of the opening part 15 to the sunshade, and the opening part 15 substantially reduces a diameter (refer FIG. 9 (B)).
[237] [Process-120]
[238] Next, for example, molybdenum (Mo) is vertically deposited on the entire surface. At this time, as shown in FIG. 10A, as the conductor layer 18 made of molybdenum having an overhang shape grows on the release layer 17, since the substantial diameter of the opening portion 15 gradually decreases. The deposition particles contributing to the deposition at the bottom of the opening 15 are gradually limited to passing near the center of the opening 15. As a result, conical deposits are formed at the bottom of the opening 15, and deposits made of the conical molybdenum form the electron-emitting electrodes 16A.
[239] Thereafter, the exfoliation layer 17 is exfoliated from the surfaces of the insulating layer 13 and the gate electrode 14 by an electrochemical process and a wet process, and the conductor layer above the insulating layer 13 and the gate electrode 14. Optionally remove (18). As a result, as shown in FIG. 10B, the conical electron emission electrode 16A can be left on the cathode electrode 12 located at the bottom of the opening 15. As shown in FIG.
[240] In addition, by combining the cathode panel 10 and the anode panel 20 in which a plurality of such field emission devices are formed, the display device shown in FIG. 7 can be obtained. Specifically, for example, a frame (not shown) having a height of about 1 mm made of ceramics or glass is prepared, and the frame, the cathode panel 10, and the anode panel 20 are formed using, for example, frit glass. After bonding together, the frit glass is dried and baked at about 450 ° C. for 10 to 30 minutes. Thereafter, the inside of the display device is evacuated to a vacuum degree of about 10 ^-4 Pa, and sealed in a suitable manner. Alternatively, for example, bonding of the frame, the cathode panel 10 and the anode panel 20 may be performed in a high vacuum atmosphere. Alternatively, depending on the structure of the display device, the cathode panel 10 and the anode panel 20 may be bonded together without a frame.
[241] An example of the manufacturing method of the anode panel 20 is demonstrated with reference to FIG. 11 (A)-(D) below. First, a luminescent crystal grain composition is prepared. For this purpose, a dispersing agent is disperse | distributed to pure water, for example, and it stirs at 3000 rpm for 1 minute using a homomixer. Next, the luminescent crystal grains are poured into pure water in which the dispersant is dispersed, and stirred at 5000 rpm for 5 minutes using a homomixer. Thereafter, for example, polyvinyl alcohol and ammonium dichromate are added, sufficiently stirred and filtered.
[242] In manufacture of the anode panel 20, the photosensitive film | membrane 50 is formed (coated) on the whole surface on the 2nd support body 21 which consists of glass, for example. Then, the photosensitive film 50 formed on the second support 21 is exposed in accordance with the exposure light emitted from the exposure light source (not shown) and passed through the opening 54 formed in the mask 53 to expose the photosensitive region ( 51) (see FIG. 11A). Thereafter, the photosensitive film 50 is developed and selectively removed, and the remainder of the photosensitive film (exposure, the photosensitive film after development) 52 is left on the second support 21 (see FIG. 11 (B)). . Next, carbon (carbon slurry) is applied to the entire surface, dried and calcined, and then the second support 21 exposed by removing the remainder 52 of the photosensitive film and the carbon thereon by the lift-off method. ), A black matrix 23 made of carbon is formed, and the remainder 52 of the photosensitive film is removed (see FIG. 11C). Thereafter, the phosphor layers 22 (22R, 22G, 22B) of red, green, and blue are formed on the exposed second support 21 (see FIG. 11D). Specifically, using a luminescent crystal grain composition prepared from each of the luminescent crystal grains (phosphor particles), for example, a red photosensitive luminescent crystal grain composition (phosphor slurry) is applied to the entire surface, and exposed and developed. Next, a green photosensitive luminescent crystal grain composition (phosphor slurry) is applied to the whole surface, and exposed and developed, and a blue photosensitive luminescent crystal grain composition (phosphor slurry) is applied to the whole surface, and the exposure, Develop it. Thereafter, an anode electrode 24 made of an aluminum thin film having a thickness of about 0.07 μm is formed on the phosphor layer 22 and the black matrix 23 by sputtering. In addition, each phosphor layer 22 may be formed by a screen printing method or the like.
[243] The anode electrode may be an anode electrode in which an effective area is covered with one sheet of conductive material, and one or more electron emitting portions or anode electrode units corresponding to one or more pixels are collected. It is good also as an anode of a type | mold.
[244] [Crown type field emission device]
[245] A schematic partial cross-sectional view of a field emission device having a first structure composed of a crown type field emission device is shown in FIG. 14A, and a schematic perspective view of a part of which is cut out is shown in FIG. 14B. The crown type field emission device includes a cathode electrode 12 formed on the first support 11, an insulation layer 13 formed on the first support 11 and the cathode electrode 12, and an insulation layer 13. Crowns provided on the gate electrode 14 formed on the opening, the opening 15 penetrating the gate electrode 14 and the insulating layer 13, and the portion of the cathode electrode 12 located at the bottom of the opening 15. It is composed of a (crown) type electron emission electrode 16B. The crown (crown) type electron emission electrode 16B exposed at the bottom of the opening 15 corresponds to the electron emission portion 16.
[246] Hereinafter, a method of manufacturing the crown type field emission device is shown in FIGS. 12A, 12B, 13A, 14C, and 14A which are typical partial cross-sections of a first support or the like. It demonstrates with reference to (B).
[247] [Process-200]
[248] First, a stripe cathode electrode 12 is formed on the first support 11 made of, for example, a glass substrate. The cathode electrode 1 extends in the left, right, and right directions of the drawing. The striped cathode electrode 12 can be formed by, for example, depositing an ITO film on the first support 11 over the entire surface by a sputtering method to a thickness of about 0.2 μm and then patterning the ITO film. The cathode electrode 12 may be a single material layer or may be constituted by stacking a plurality of material layers. For example, in order to reduce the nonuniformity of the electron emission characteristic of each electron emission electrode formed in a later step, the surface layer portion of the cathode electrode 12 can be made of a material having a higher electrical resistivity than the remainder. Next, an insulating layer 13 is formed on the first support 11 and the cathode electrode 12. Here, as an example, the glass paste is screen printed on the entire surface with a thickness of about 3 μm. Next, in order to remove the water | moisture content and the solvent contained in the insulating layer 13, and to planarize the insulating layer 13, for example, 100 degreeC, 10 minutes of plasticity, and 500 degreeC, Two-step baking called main baking for 20 minutes is performed. As described above, the SiO ₂ film may be formed by screen printing using glass paste, for example, by plasma CVD.
[249] Next, a stripe gate electrode 14 is formed on the insulating layer 13 (see Fig. 12A). The gate electrode 14 extends in the vertical direction in the drawing. For example, the gate electrode 14 is formed on the insulating layer 13 by depositing a chromium (Cr) film having a thickness of about 20 nm and a gold (Au) film having a thickness of 0.2 μm on the entire surface in this order by an electron beam deposition method. Subsequently, it can form by patterning this laminated film. In addition, the chromium film is formed to compensate for the lack of adhesion of the gold film to the insulating layer 13. The direction in which the projected image of the gate electrode 14 extends is 90 degrees with the direction in which the projected image of the striped cathode electrode 12 extends.
[250] [Process-210]
[251] Next, the gate electrode 14 and the insulating layer 13 are etched by the RIE method using an etching mask made of, for example, a photoresist material, and the openings are formed in the gate electrode 14 and the insulating layer 13. 15 is formed, and the cathode electrode 12 is exposed at the bottom of the opening 15 (see FIG. 12B). The diameter of the opening part 15 shall be about 2-50 micrometers.
[252] [Process-220]
[253] Next, the etching mask is removed, and a release layer 60 is formed on the gate electrode 14, on the insulating layer 13, and on the sidewall surface of the opening 15 (see FIG. 13A). ). In forming such a peeling layer 60, for example, a photoresist material may be applied to the entire surface by a spin coating method, and patterning may be performed such that only a portion (center portion) of the bottom of the opening 15 is removed. . At this point in time, the diameter of the opening 15 is substantially reduced to about 1 to 20 µm.
[254] [Process-230]
[255] Next, as shown in Fig. 13B, a conductive composition layer 61 made of a composition raw material is formed on the entire surface. The composition raw material used here contains 60 weight% of graphite particles of an average particle diameter of about 0.1 micrometer as electroconductive particle, and 40 weight% of water glass of No. 4 as a binder. This composition raw material is spin-coated on the whole surface on conditions of 1400 rpm and 10 second, for example. The surface of the conductive composition layer 61 in the opening 15 gradually rises along the sidewall surface of the opening 15 due to the surface tension of the composition raw material, and concave toward the central portion of the opening 15. . Thereafter, plasticity for removing moisture contained in the conductive composition layer 61 is performed at 400 ° C. for 30 minutes in the air, for example.
[256] In the composition raw material, the binder may itself be a dispersion medium of the conductive particles, (2) may coat the conductive particles, and (3) the dispersion medium of the conductive particles may be dispersed or dissolved in a suitable solvent. A typical example of the case of (3) is water glass, and Nos. 1 to 4 or equivalents thereof specified in Japanese Industrial Standard (JIS) K1408 can be used. Nos. 1 to 4 are grades of four levels depending on the difference in the number of moles of silicon oxide (SiO ₂ ) (about 2 to 4 moles) with respect to 1 mole of sodium oxide (Na 2 O) which is a component of water glass, respectively. Different. Therefore, when using water glass in a lift-off process, it considers various conditions, such as the kind and content of electroconductive particle disperse | distributed to water glass, an affinity with the peeling layer 60, and the aspect ratio of the opening part 15, and are optimal. It is preferable to select water glass having a grade of or to prepare and use water glass equivalent to these grades.
[257] Since the binder is generally inferior in conductivity, if the content of the binder is excessive with respect to the content of the conductive particles in the composition material, the electrical resistance of the electron-emitting electrode 16B to be formed increases, and the electron emission may not be performed smoothly. There is. Therefore, for example, taking a composition material obtained by dispersing carbon-based material particles as conductive particles in water glass, the proportion of the carbon-based material particles in the total weight of the composition material is determined by the electrical resistance value of the electron-emitting electrode 16B and the composition. It is preferable to select in the range of about 30 to 95 weight% in consideration of characteristics, such as the viscosity of a raw material and the adhesiveness of electroconductive particles. By selecting the proportion of the carbon-based material particles within this range, it is possible to sufficiently lower the electric resistance value of the electron-emitting electrode 16B to be formed and to maintain good adhesion between the carbon-based material particles. However, in the case where alumina particles are mixed with the carbon-based material particles as the conductive particles, the adhesion between the conductive particles tends to be lowered. Therefore, it is preferable to increase the proportion of the carbon-based material particles in accordance with the content of the alumina particles. It is especially preferable to make it 60 weight% or more. Moreover, the composition raw material may contain additives, such as a dispersing agent for stabilizing the dispersion state of electroconductive particle, a pH adjuster, a drying agent, a hardening | curing agent, and an antiseptic | preservative. Moreover, you may use the composition raw material which disperse | distributes the powder which covered electroconductive particle with the film of binder (binder) in a suitable dispersion medium.
[258] As an example, when the diameter of the crown-shaped electron emission electrode 16B is about 1 to 20 µm, and carbon-based material particles are used as the conductive particles, the particle diameter of the carbon-based material particles is about 0.1 µm to 1 µm. desirable. By selecting the particle diameter of the carbon-based material particles in this range, a sufficiently high mechanical strength is provided at the edge of the crown-shaped electron-emitting electrode 16B, and the adhesion of the electron-emitting electrode 16B to the cathode electrode 12 is provided. This becomes good.
[259] [Process-240]
[260] Next, as shown to FIG. 13C, the peeling layer 60 is removed. Peeling is performed by immersing in 2weight% of sodium hydroxide aqueous solution for 30 second. At this time, you may peel while processing an ultrasonic vibration. Accordingly, the portion of the conductive composition layer 61 on the release layer 60 together with the release layer 60 is removed, and the conductive composition layer 61 on the cathode electrode 12 exposed to the bottom of the opening 15 is removed. Only parts remain. This remaining portion becomes the electron emission electrode 16B. The shape of the electron-emitting electrode 16B is recessed toward the center of the opening 15 to form a crown. The state at the time of [Process-240] complete | finished is shown to FIG. 14 (A) and (B). FIG. 14B is a schematic perspective view showing a part of the field emission device, and FIG. 14A is a schematic partial cross-sectional view taken along the line A-A of FIG. 14B. In FIG. 14B, a portion of the insulating layer 13 and the gate electrode 14 are cut out so that the entire electron emission electrode 16B can be seen. It is sufficient to form about 5 to 100 electron-emitting electrodes 16B in one overlapping region. In addition, the binder exposed on the surface of the electron emission electrode 16B may be removed by etching so that the conductive particles are reliably exposed on the surface of the electron emission electrode 16B.
[261] [Process-250]
[262] Next, the electron emission electrode 16B is fired. Firing is performed under conditions of 30 minutes at 400 ° C in a dry atmosphere. In addition, what is necessary is just to select baking temperature according to the kind of binder contained in a composition raw material. For example, when the binder is an inorganic material such as water glass, the heat treatment may be performed at a temperature at which the inorganic material can be fired. What is necessary is just to heat-process at the temperature which can harden | cure a thermosetting resin, when a binder is a thermosetting resin. However, in order to maintain the adhesiveness of electroconductive particle, it is preferable to heat-process at the temperature which a thermosetting resin does not deteriorate excessively or may be carbonized. Even if any binder is used, the heat treatment temperature needs to be a temperature at which no damage or defect occurs to the gate electrode, the cathode electrode, and the insulating layer. The heat treatment atmosphere is preferably an inert gas atmosphere so that the electrical resistivity of the gate electrode and the cathode electrode is increased by oxidation, or defects or damages are not caused to the gate electrode or the cathode electrode. In addition, when thermoplastic resin is used as a binder, heat treatment may not be required.
[263] [Flat field emission device (No. 1)]
[264] FIG. 15C is a schematic partial sectional view of the field emission device having the first structure composed of the flat field emission device. The flat field emission device includes, for example, a cathode electrode 12 formed on the first support 11 made of glass, an insulating layer 13 formed on the first support 11, and a cathode electrode 12, an insulating layer. On the gate electrode 14 formed on the 13, the opening 15 penetrating through the gate electrode 14 and the insulating layer 13, and on the portion of the cathode electrode 12 located at the bottom of the opening 15. It consists of the formed flat electron emission electrode 16C. Here, the electron emission electrode 16C is formed on the striped cathode electrode 12 extending in the vertical direction in the plane of Fig. 15C. In addition, the gate electrode 14 extends in the left, right, and right directions in FIG. 15C. The cathode electrode 12 and the gate electrode 14 are made of chromium. Specifically, the electron-emitting electrode 16C is composed of a thin layer made of graphite powder. In addition, a resistor layer 62 made of SiC between the cathode electrode 12 and the electron emission electrode 16C is formed to stabilize the operation of the field emission device and to uniformize the electron emission characteristics. In the flat field emission device shown in FIG. 15C, the resistor layer 62 and the electron emission electrode 16C are formed over the entire surface of the cathode electrode 12, but are not limited to such a structure. At least the electron emission electrode 16C may be formed at the bottom of the opening 15.
[265] Hereinafter, a method of manufacturing a flat field emission device will be described with reference to FIGS. 15A to 15C which are typical partial cross-sectional views of a first support or the like.
[266] [Process-300]
[267] First, a cathode electrode conductive material layer made of chromium (Cr) is formed on the first support 11 by sputtering, and then the cathode electrode conductive material layer is patterned by lithography and dry etching techniques. For this reason, the stripe cathode electrode 12 can be formed on the first support 11 (see Fig. 15A). The cathode electrode 12 extends in the vertical direction in the drawing plane.
[268] [Process-310]
[269] Next, the electron emission electrode 16C is formed on the cathode electrode 12. Specifically, first, a resistor layer 62 made of SiC is formed on the entire surface by sputtering, and then an electron-emitting electrode 16C made of graphite powder coating is formed on the resistor layer 62 by spin coating. Then, the electron emission electrode 16C is dried. Thereafter, the electron emission electrode 16C and the resistor layer 62 are patterned according to a known method (see Fig. 15B). The electron emission unit is composed of an electron emission electrode 16C.
[270] [Process-320]
[271] Next, the insulating layer 13 is formed in the whole surface. Specifically, the insulating layer 13 made of SiO ₂ is formed on the electron-emitting electrode 16C and the first support 11 by, for example, sputtering. The insulating layer 13 may be formed by screen printing a glass paste or by forming a SiO ₂ layer by a CVD method. After that, a stripe gate electrode 14 is formed on the insulating layer 13.
[272] [Process-330]
[273] Next, after the etching mask is formed, an opening 15 is formed in the gate electrode 14 and the insulating layer 13, and the electron emission electrode 16C is exposed at the bottom of the opening 15. Thereafter, the mask for etching is removed and heat treatment is performed at 400 ° C. for 30 minutes in order to remove the organic solvent in the electron-emitting electrode 16C. In this way, the field emission device shown in FIG. 15C can be obtained.
[274] [Flat field emission device (No. 2)]
[275] FIG. 16C is a schematic partial sectional view of a modification of the field emission device having the first structure including the flat field emission device. In the flat field emission device shown in Fig. 16C, the structure of the electron emission electrode 16C is slightly different from the flat field emission device shown in Fig. 15C. Hereinafter, with reference to FIGS. 16A to 16C which are typical partial cross-sectional views of a 1st support body etc., the manufacturing method of such a field emission element is demonstrated.
[276] [Process-400]
[277] First, a conductive material layer for the cathode electrode is formed on the first support 11. Specifically, after forming a resist material layer (not shown) on the entire surface of the first support 11, the resist material layer of the portion where the cathode electrode is to be formed is removed. Thereafter, a conductive material layer for the cathode electrode made of chromium (Cr) is formed on the entire surface by a sputtering method. Further, a resistor layer 62 made of SiC is formed on the entire surface by sputtering. Then, a graphite powder coating layer is formed on the resistor layer 62 by spin coating, and the graphite powder coating layer is dried. Thereafter, when the resist material layer is removed using a stripping solution, the conductive material layer for the cathode electrode, the resistor layer 62, and the graphite powder coating layer formed on the resist material layer are also removed. In this way, a structure in which the cathode electrode 12, the resistor layer 62, and the electron emission electrode 16C are stacked can be obtained (see FIG. 16A).
[278] [Process-410]
[279] Next, after the insulating layer 13 is formed on the entire surface, a stripe gate electrode 14 is formed on the insulating layer 13 (see FIG. 16B). After that, the openings 15 are formed in the gate electrode 14 and the insulating layer 13 to expose the electron emission electrode 16C at the bottom of the opening 15 (see FIG. 16C). The electron emission electrode 16C provided on the surface of the cathode electrode 12 exposed at the bottom of the opening 15 corresponds to the electron emission portion.
[280] [Flat field emission device (No. 3)]
[281] FIG. 18B is a schematic partial sectional view of another modified example of the field emission device having the first structure including the flat field emission device. In this flat field emission device, the electron emission electrode 16D is formed of a carbon thin film formed by the CVD method.
[282] It is preferable to comprise the electron-emitting part with the carbon thin film because the work function of carbon (C) is low and a high emission electron current can be achieved. In order to emit electrons from the carbon thin film, the carbon thin film may be placed in a suitable electric field (for example, an electric field having an intensity of about 10 ⁶ volts / m).
[283] By the way, when plasma etching of a carbon thin film, such as a diamond thin film, is performed using a resist layer as an etching mask, (CH _X ) type | system | group or (CF _X ) type | system | group etc. as a reaction by-product in an etching reaction system Carbon-based polymer of is produced as the depositing material. In general, when a deposition material is formed in an etching reaction system in plasma etching, the deposition material is deposited on the sidewall surface of the resist layer having a low ion incident probability or on the processing cross section of the etching target to form a so-called sidewall protection film. Contributes to the achievement of the shape obtained by anisotropic processing of the object to be etched. However, when oxygen gas is used as the etching gas, the sidewall protective film made of the carbon-based polymer is immediately removed by the oxygen gas even if it is produced. Moreover, when oxygen gas is used as an etching gas, the resist layer is consumed too much. For these reasons, in conventional oxygen plasma processing of a diamond thin film, the dimensional conversion difference with respect to the dimension of the mask of a diamond thin film is large, and anisotropic processing is also difficult in many cases.
[284] In order to solve such a problem, for example, a carbon thin film selective growth region may be formed on the surface of the cathode electrode, and an electron emitting portion made of a carbon thin film may be formed on the carbon thin film selective growth region. That is, in the manufacture of this field emission device, after forming a cathode electrode on the first support, a carbon thin film selective growth region is formed on the surface of the cathode electrode, and then a carbon thin film (electron is formed on the carbon thin film selective growth region. Equivalent to the discharge portion). In addition, the process of forming a carbon thin film selective growth region on the surface of a cathode is called a carbon thin film selective growth region formation process.
[285] Here, the carbon thin film selective growth region is preferably a portion of the cathode electrode having metal particles attached to the surface, or a portion of the cathode electrode having a metal thin film formed on the surface thereof. In order to further ensure the selective growth of the carbon thin film in the carbon thin film selective growth region, sulfur (S), boron (B) or phosphorus (P) is preferably attached to the surface of the carbon thin film selective growth region. In addition, it is considered that these materials act as a kind of catalyst, and therefore, the selective growth of the carbon thin film can be further improved. Further, the carbon thin film selective growth region may be formed on the surface of the portion of the cathode electrode located at the bottom of the opening, and from the portion of the cathode electrode located at the bottom of the opening to the surface of the portion of the cathode electrode other than the bottom of the opening. It may be formed so as to extend. The carbon thin film selective growth region may be formed or partially formed on the entire surface of the surface of the portion of the cathode electrode located at the bottom of the opening.
[286] In the carbon thin film selective growth region forming step, the metal particles are attached to the surface of the portion of the cathode electrode (hereinafter sometimes referred to simply as the cathode electrode surface) to form the carbon thin film selective growth region, or a metal thin film is formed. Therefore, it is desirable to obtain a carbon thin film selective growth region consisting of a portion of the cathode electrode on which the metal particles adhere to the surface or the metal thin film is formed on the surface. In this case, in order to further ensure the selective growth of the carbon thin film in the carbon thin film selective growth region, sulfur (S), boron (B) or phosphorus (P) is deposited on the surface of the carbon thin film selective growth region. It is preferable that this makes it possible to further improve the selective growth of the carbon thin film. As a method of attaching sulfur, boron or phosphorus to the surface of the carbon thin film selective growth region, for example, a compound layer made of a compound containing sulfur, boron or phosphorus is formed on the surface of the carbon thin film selective growth region, and then For example, the method of decomposing the compound which comprises a compound layer by heat-processing to a compound layer, and leaving sulfur, boron, or phosphorus on the surface of a carbon thin film selective growth area | region is mentioned. Thionaphthene, thiofften, thiophene can be illustrated as a compound containing sulfur. As a compound containing boron, triphenyl boron can be illustrated. Triphenylphosphine can be illustrated as a compound containing phosphorus.
[287] In addition, in order to further ensure the selective growth of the carbon thin film in the carbon thin film selective growth region, the metal particles are deposited on the surface of the cathode electrode, or after the metal thin film is formed, the surface of the metal particles or the surface of the metal thin film is formed. It is preferable to remove the metal oxide (so-called natural oxide film). Removal of metal oxide from the surface of the metal particles or the surface of the metal thin film is carried out, for example, by microwave plasma method in a hydrogen gas atmosphere, trans-coupled plasma method, inductively-coupled plasma method, electron cyclotron resonance plasma method, RF plasma method. It is preferable to carry out by plasma reduction treatment by, etc., sputtering in an argon gas atmosphere, or washing treatment using an acid or a base such as, for example, hydrofluoric acid. In addition, in the case of including the step of attaching sulfur, boron or phosphorus to the surface of the carbon thin film selective growth region, and the step of removing the metal oxide on the surface of the metal particles or the surface of the metal film, after forming the opening in the insulating layer It is preferable to carry out these processes before forming the carbon thin film on the carbon thin film selective growth region.
[288] As a method of attaching metal particles to the surface of the cathode electrode to obtain a carbon thin film selective growth region, for example, a region other than the region of the cathode electrode to form the carbon thin film selective growth region is a suitable material (for example, a mask layer). And a layer made of a solvent and metal particles are formed on the surface of the portion of the cathode electrode to form the carbon thin film selective growth region, and then the solvent is removed to leave the metal particles. Alternatively, as a step of attaching metal particles to the surface of the cathode electrode, for example, in a state where a region other than the region of the cathode electrode to form the carbon thin film selective growth region is covered with an appropriate material (for example, a mask layer), Metal compound particles comprising metal atoms constituting the metal particles are adhered to the surface of the cathode electrode, and then decomposed by heating the metal compound particles, thus forming carbon thin film selective growth comprising a portion of the cathode electrode having metal particles attached to the surface. The method of obtaining an area | region is mentioned. In this case, specifically, a method of forming a layer composed of a solvent and a metal compound particle on the surface of a portion of the cathode electrode to form a carbon thin film selective growth region and then removing the solvent to leave the metal compound particle can be exemplified. have. The metal compound particles are preferably made of at least one material selected from the group consisting of halides (for example, iodides, chlorides, embrittlements, etc.), oxides, hydroxides and organometals of the metals constituting the metal particles. In addition, in these methods, the material (for example, mask layer) which covered the area | region other than the area | region of the cathode electrode to form a carbon thin film selective growth area | region is removed at an appropriate step.
[289] A method of forming a metal thin film on the surface of a cathode electrode to obtain a carbon thin film selective growth region, for example, electrolysis in a state in which a region other than the region of the cathode electrode to form the carbon thin film selective growth region is covered with a suitable material. Known methods such as a plating method, an electroless plating method, a CVD method (chemical vapor deposition method) including a MOCVD method, and a physical vapor deposition method (PVD method, Physical Vapor Deposition method) may be mentioned. In addition, as a physical vapor deposition method, (a) electron beam heating method, resistance heating method, various vacuum deposition methods such as flash deposition, (b) plasma deposition method, (c) two-pole sputtering method, direct current sputtering method, direct current magnetron sputtering method, Various sputtering methods such as high frequency sputtering method, magnetron sputtering method, ion beam sputtering method, bias sputtering method, (d) DC (direct current) method, RF method, next pole method, activation reaction method, electric field deposition method, high frequency ion plating method, reactivity Various ion plating methods, such as the ion plating method, are mentioned.
[290] Here, the metal particles or the metal thin film is molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), cobalt (Co), tungsten (W), zirconium (Zr), tantalum (Ta), iron It is preferable that it is comprised from at least 1 sort (s) of metal chosen from the group which consists of (Fe), copper (Cu), platinum (Pt), and zinc (Zn).
[291] Examples of the carbon thin film include graphite thin films, amorphous carbon thin films, diamond-like carbon thin films, and flaren thin films. As a method of forming a carbon thin film, microwave plasma method, trans-coupled plasma method, inductively-coupled plasma method, electron cyclotron resonance The CVD method using a plasma method, an RF plasma method, etc., and the CVD method using a parallel plate type CVD apparatus can be illustrated. In the form of a carbon thin film, a thin film type | mold uses the carbon whisker and the carbon nanotubes (hollow and solid) from the beginning. Inclusive).
[292] In addition, the cathode electrode may have a single layer structure of a conductive material layer, and may have a three-layer structure of a lower conductive material layer, a resistor layer formed on the lower conductive material layer, and an upper conductive material layer formed on the resistor layer. You may also In the latter case, a carbon thin film selective growth region is formed on the surface of the upper conductive material layer. By forming the resistor layer in this manner, the electron emission characteristics of the electron emission electrode can be made uniform.
[293] Hereinafter, an example of the manufacturing method of a flat field emission element is demonstrated with reference to FIG. 17 (A), (B) and FIG. 18 (A), (B) which are typical partial cross sections, such as a 1st support body.
[294] [Process-500]
[295] First, a cathode electrode conductive material layer is formed on the first support 11 made of, for example, a glass substrate, and then the cathode electrode conductive material layer is patterned by a known lithography technique and RIE method. Cathode electrode 12 is formed on first support 11. The stripe cathode electrode 12 extends in the left, right, and right directions of the drawing. The cathode electrode 12 is made of, for example, a chromium (Cr) layer having a thickness of about 0.2 μm formed by the sputtering method.
[296] [Process-510]
[297] Thereafter, the insulating layer 13 is formed on the entire surface, specifically on the first support 11 and on the cathode electrode 12.
[298] [Process-520]
[299] Subsequently, after the stripe-shaped gate electrode 14 is formed on the insulating layer 13, the opening 15 is formed in the gate electrode 14 and the insulating layer 13, and the cathode is formed at the bottom of the opening 15. The electrode 12 is exposed (see FIG. 17A). The stripe gate electrode 14 extends in the vertical direction in the drawing. The planar shape of the opening part 15 is circular, for example with a diameter of 1 micrometer-30 micrometers. What is necessary is just to form about 1-3000 openings 15 in the area | region (double area | region) for one pixel, for example.
[300] [Process-530]
[301] Next, the electron emission electrode 16D is formed on the cathode electrode 12 exposed at the bottom of the opening 15. Specifically, first, the carbon thin film selective growth region 63 is formed on the surface of the cathode electrode 12 located at the bottom of the opening 15. Therefore, first, the mask layer 64 in which the surface of the cathode electrode 12 is exposed is formed in the center of the bottom of the opening 15 (see FIG. 17B). Specifically, the resist material layer is formed on the entire surface including the inside of the opening 15 by spin coating, and then, by lithography, holes are formed in the resist material layer located at the center of the bottom of the opening 15. By doing this, the mask layer 64 can be obtained. The mask layer 64 covers a part of the cathode electrode 12 located at the bottom of the opening 15, the side wall of the opening 15, the gate electrode 14, and the insulating layer 13. For this reason, in the next step, the carbon thin film selective growth region is formed on the surface of the cathode electrode 12 located at the center of the bottom of the opening 15, but the cathode electrode 12 and the gate electrode 14 are formed on the metal particles. The short circuit can be reliably prevented.
[302] Next, metal particles are deposited on the mask layer 64 including the exposed surface of the cathode electrode 12. Specifically, a cathode electrode in which a solution in which nickel (Ni) fine particles are dispersed in a polysiloxane solution (using isopropyl alcohol as a solvent) is applied to the entire surface by spin coating to form a carbon thin film selective growth region 63 ( A layer composed of a solvent and metal particles is formed on the surface of the portion of 12). Thereafter, the mask layer 64 is removed, the solvent is removed by heating at about 400 ° C., and the carbon thin film selective growth region 63 is obtained by leaving the metal particles 65 on the exposed surface of the cathode electrode 12. (See FIG. 18A). The polysiloxane also has a function of fixing the metal particles 65 on the exposed surface of the cathode electrode 12 (so-called adhesion function).
[303] [Process-540]
[304] Thereafter, on the carbon thin film selective growth region 63, a carbon thin film 66 having a thickness of about 0.2 탆 is formed to obtain an electron emission electrode 16D. This state is shown in FIG. The film forming conditions of the carbon thin film 66 by the microwave plasma CVD method are illustrated in Table 1 below.
[305] TABLE 1
[306] [Film Formation Conditions of Carbon Thin Film]
[307] Gas Used: CH ₄ / H ₂ = 10O / 1O SCCM
[308] Pressure: 1.3 × 10 ³ Pa
[309] Micropower: 500 W (13.56 MHz)
[310] Film formation temperature: 500 ℃
[311] [Flat Type Field Emission Device (No. 1)]
[312] FIG. 19C is a schematic partial sectional view of the field emission device having the second structure composed of the planar field emission device. The planar field emission device is, for example, a stripe type cathode electrode 12 formed on the first support 11 made of glass, an insulating layer 13 formed on the first support 11 and the cathode electrode 12. ) And an opening 15 having a stripe-shaped gate electrode 14 formed on the insulating layer 13, a gate electrode 14, and an insulating layer 13, and having a cathode electrode 12 exposed at a bottom thereof. . The cathode electrode 12 extends in the vertical direction in the plane of Fig. 19C, and the gate electrode 14 extends in the left, right and left directions of the plane of Fig. 19C. The cathode electrode 12 and the gate electrode 14 are made of chromium (Cr), and the insulating layer 13 is made of SiO ₂ . Here, the portion of the cathode electrode 12 exposed to the bottom of the opening 15 corresponds to the electron emitting portion 16.
[313] Hereinafter, a method of manufacturing a planar field emission device will be described with reference to FIGS. 19A to 19C which are typical partial cross-sectional views of a first support or the like.
[314] [Process-600]
[315] First, the cathode electrode 12 functioning as the electron emission unit 16 is formed on the first support 11. Specifically, a cathode electrode conductive material layer made of chromium (Cr) is formed on the first support 11 by sputtering, and then the cathode electrode conductive material layer is patterned by lithography and dry etching techniques. . For this reason, the stripe cathode electrode 12 can be formed on the first support 11 (see Fig. 19A). The cathode electrode 12 extends in the vertical direction in the drawing.
[316] [Process-610]
[317] Next, an insulating layer 13 made of SiO ₂ is formed on the first support 11 and the cathode electrode 12 by, for example, CVD. In addition, you may form the insulating layer 13 by glass paste by the screen printing method.
[318] [Process-620]
[319] After that, a stripe gate electrode 14 is formed on the insulating layer 13. Specifically, first, a conductive material layer made of chromium is formed on the entire surface by sputtering, and then the conductive material layer is patterned by lithography and dry etching techniques. As a result, a stripe gate electrode 14 can be formed (see FIG. 19B). In addition, the gate electrode 14 extends in the left, right, and right directions of the drawing. For example, a stripe-type gate electrode 14 may be formed directly on the insulating layer 13 by screen printing.
[320] [Process-630]
[321] Next, an opening 15 is formed in the gate electrode 14 and the insulating layer 13, and the cathode electrode 12 serving as the electron emitting portion 16 is exposed at the bottom of the opening 15 (FIG. 19). (C) of).
[322] Planar Field Emission Device (No. 2)
[323] The cathode of the cathode 12 is exposed to the bottom of the opening 15 in that the planar field emission device shown in FIG. 20A is a part of the planar field emission device shown in FIG. 19C. 12A is formed in the surface (corresponding to the electron-emitting part 16) at the surface thereof. Such a planar field emission device can be manufactured by the following manufacturing method.
[324] [Process-700]
[325] First, in the same manner as in [Step-600] to [Step-620], the stripe cathode electrode 12 is formed on the first support 11, and the insulating layer 13 is formed on the entire surface. After that, a stripe gate electrode 14 is formed on the insulating layer 13. That is, a tungsten layer having a thickness of about 0.2 μm is formed on the first support 11 made of, for example, a glass substrate by a sputtering method, and the tungsten layer is patterned in a stripe pattern according to a usual procedure to form a cathode. The electrode 12 is formed. Next, an insulating layer 13 is formed on the first support 11 and the cathode electrode 12. The insulating layer 13 can be formed by the CVD method using TEOS (tetraethoxysilane) as a source gas. On this insulating layer 13, a conductive material layer made of chromium having a thickness of about 0.2 m, for example, is formed and patterned into a stripe to form a gate electrode 14. The state which the process to here is complete | finished is substantially the same as what was shown to FIG. 19B.
[326] [Process-710]
[327] Next, in the same manner as in [Step-630], the openings 15 are formed in the gate electrode 14 and the insulating layer 13, and the cathode electrode 12 is exposed at the bottom of the opening 15. Thereafter, a small uneven portion 12A is formed in the portion of the cathode electrode 12 exposed at the bottom of the opening 15. In the formation of the uneven portion 12A, etching is performed by using SF ₆ as the etching gas so that the grain boundary and the etching rate are faster than the etching rate of the tungsten crystal grains constituting the cathode electrode 12. The conditions are set and dry etching is performed by the RIE method. As a result, it is possible to form the finely recessed portion 12A having a dimension substantially reflecting the grain size of tungsten.
[328] In the structure of such a planar field emission device, a large electric field is applied from the gate electrode 14 to the convex portions of the small uneven portions 12A of the cathode electrode 12, more specifically, the 12 uneven portions 12A. At this time, since the electric field concentrated on the convex portion is larger than the case where the surface of the cathode electrode 12 is smooth, electrons are efficiently emitted from the convex portion by the quantum tunnel effect. Therefore, as compared with the planar field emission device in which only the smooth cathode electrode 12 is exposed at the bottom of the opening 15, it is possible to improve the brightness when assembled to the display device. Therefore, according to the planar field emission device shown in FIG. 20A, even if the potential difference between the gate electrode 14 and the cathode electrode 12 is relatively small, sufficient emission electron current density can be obtained, resulting in high luminance of the display device. Is achieved. Alternatively, the gate voltage required to achieve the same brightness is lowered, and therefore, it is possible to achieve low power consumption.
[329] In addition, although the opening part 15 was formed by etching the insulating layer 13, after that, the micro uneven part 12A was formed in the cathode electrode 12 by the anisotropic etching technique, but etching for forming the opening part 15 is carried out. According to this, it is also possible to simultaneously form the minute uneven portion 12A. That is, when etching the insulating layer 13, the anisotropic etching conditions which can expect some ion sputtering operation are employ | adopted, and etching continues even after the opening part 15 with a vertical wall is formed, and the opening part 15 is carried out. The uneven portion 12A may be formed in the portion of the cathode electrode 12 exposed at the bottom of the. After that, the isotropic etching of the insulating layer 13 may be performed.
[330] In the same process as in [Step-600], on the first support 11, a cathode electrode conductive material layer made of tungsten is formed by the sputtering method, and then used for the cathode electrode by lithography technique and dry etching technique. The conductive material layer is patterned, and then the fine uneven portions 12A are formed on the surface of the conductive material layer for the cathode electrode, and then the same steps as in [Step-610] to [Step-630] are performed to thereby obtain the result of FIG. The same field emission device as shown in (A) can be manufactured.
[331] Further, in the same process as in [Step-600], after the cathode electrode conductive material layer made of tungsten is formed on the first support 11 by sputtering, fine concavities and convexities are formed on the surface of the cathode electrode conductive material layer. A portion 12A is formed, and then the conductive material layer for the cathode electrode is patterned by lithography and dry etching, followed by the same steps as in [Step-610] to [Step-630]. The same field emission device as shown in (A) can be manufactured.
[332] 20B shows a modification of the field emission device shown in FIG. 20A. In the field emission device shown in FIG. 20B, the average height position of the distal end portion of the minute uneven portion 12A is present on the first support 11 side rather than the lower surface position of the insulating layer 13 (that is, lowered). Is going). To form such a field emission device, the duration of dry etching in [Step-710] may be extended. According to such a structure, the electric field strength near the center part of the opening part 15 can be raised further.
[333] FIG. 21 shows a planar field emission device in which a coating layer 12B is formed on the surface of the cathode electrode 12 corresponding to the electron emitting portion 16 (more specifically, at least on the micro-uneven portion 12A).
[334] The coating layer 12B is preferably made of a material having a smaller work function Φ than the material constituting the cathode electrode 12. Which material is selected is the work function of the material constituting the cathode electrode 12, What is necessary is just to determine according to the potential difference between the gate electrode 14 and the cathode electrode 12, the magnitude | size of the emitted electron current density, etc. Amorphous diamond can be illustrated as a constituent material of the coating layer 12B. When the coating layer 12B is formed using amorphous diamond, the emission electron current density required for the display device can be obtained at an electric field strength of 5 × 10 ⁷ V / m or less.
[335] The thickness of the coating layer 12B is selected to the extent that the uneven portions 12A can be reflected. This is because the concave portion of the finely recessed portion 12A is buried by the coating layer 12B, and the surface of the electron emitting portion is smoothed, so that the meaning of forming the finely recessed portion 12A is lost. Therefore, although it depends also on the dimension of 12 A of uneven | corrugated parts, for example, when 12 A of uneven | corrugated parts are formed reflecting the crystal grain diameter of an electron emission part, the thickness of the coating layer 12B is about 30-100 nm. It is desirable to choose. In addition, when lowering the average height position of the tip end portion of the uneven portion 12A below the lower surface position of the insulating layer, it is more precisely lowering the average height position of the tip end portion of the coating layer 12B than the lower surface position of the insulating layer. desirable.
[336] Specifically, after [Step-710], the coating layer 12B made of amorphous diamond may be formed on the entire surface by, for example, CVD. The coating layer 12B is also deposited on an etching mask (not shown) formed on the gate electrode 14 and the insulating layer 13, but this deposition portion is removed at the same time when the etching mask is removed. As the source gas, for example, the coating layer 12B can be formed by a CVD method using a CH ₄ / H ₂ mixed gas or a CO / H ₂ mixed gas, and thermally decomposed into amorphous diamond by thermal decomposition of a compound containing carbon, respectively. A coating layer 12B is formed.
[337] Further, in the same process as in [Step-600], after the cathode material conductive material layer made of tungsten is formed on the first support 11 by sputtering, the cathode electrode is formed by lithography technique and dry etching technique. The conductive material layer is patterned, and then, the uneven portions 12A are formed on the surface of the conductive material layer for the cathode electrode, and then the coating layer 12B is formed, followed by [Step-610] to [Step-630]. By carrying out the same steps as in the above], the field emission device shown in Fig. 21 can be manufactured.
[338] Further, in the same process as in [Step-600], after the cathode electrode conductive material layer made of tungsten is formed on the first support 11 by sputtering, fine concavities and convexities are formed on the surface of the cathode electrode conductive material layer. After the portion 12A is formed, and then the coating layer 12B is formed, the coating layer 12B and the conductive material layer for the cathode electrode are patterned by lithography and dry etching, followed by [Step-610] to [ By carrying out the same steps as in the step 630, the field emission device shown in FIG. 21 can be manufactured.
[339] Moreover, as a material which comprises a coating layer, you may select suitably the material which made the secondary electron gain (delta) of such material become larger than the secondary electron gain (delta) of the conductive material which comprises a cathode electrode.
[340] Further, a coating layer may be formed on the electron-emitting portion 16 (the surface of the cathode electrode 12) of the planar field emission element shown in FIG. 19C. In this case, after [Step-630], the coating layer 12B may be formed on the surface of the cathode electrode 12 exposed at the bottom of the opening 15. Further, in [Step-600], for example, After forming the cathode electrode conductive material layer on the first support 11, the coating layer 12B is formed on the cathode electrode conductive material layer, and then these layers are formed by lithography and dry etching techniques. Patterning is done.
[341] Crater-type field emission device (No. 1)
[342] A schematic partial cross-sectional view of a crater type field emission device is shown in FIG. 25B. In the crater type field emission device, a cathode electrode 112 having a plurality of raised portions 112A for emitting electrons and a recessed portion 112B surrounded by each raised portion 112A is formed on the first support 11. It is provided. Moreover, the typical perspective view which removed the insulating layer 13 and the gate electrode 14 is shown to FIG. 24B.
[343] The shape of the recess is not particularly limited, but is typically approximately spherical. This is related to the fact that the sphere is used in the method for manufacturing the crater type field emission device so that the recess 112B is formed to reflect part of the shape of the sphere. Therefore, when the recessed part 112B is substantially spherical, the raised part 112A surrounding the recessed part 112B becomes an annular shape, and the recessed part 112B and the raised part 112A in this case are the whole. As craters or caldera. Since the raised part 112A is a part which emits electrons, it is especially preferable that the tip part 112C is sharp from a viewpoint of raising electron emission efficiency. The profile of the tip portion 112C of the raised portion 112A may have irregular irregularities or a smooth shape. The arrangement of the raised portions 112A in one pixel may be regular or random. Moreover, the recessed part 112B may be enclosed by 112A of continuous convex parts along the circumferential direction of the recessed part 112B, and in some cases, melt | discontinuity along the circumferential direction of the recessed part 112B is carried out. It may be surrounded by the base 112A.
[344] In the method for manufacturing a crater type field emission device, the step of forming a striped cathode electrode on the first support is more specifically,
[345] Forming a stripe type cathode electrode covering a plurality of spheres on the first support;
[346] By removing the sphere, the portion of the cathode electrode covering the sphere is removed, and thus the cathode electrode having a plurality of raised portions for emitting electrons and a recessed portion surrounded by each raised portion and reflecting a part of the shape of the sphere. Forming process
[347] Is done.
[348] It is desirable to remove the spheres according to the state change and / or chemical change of the spheres. Here, the state change and / or chemical change of the sphere means a change, such as expansion, sublimation, foaming, gas generation, decomposition, combustion, carbonization, or a combination thereof. For example, when a sphere consists of organic materials, it is more preferable to remove it by burning a sphere. Further, the removal of the spheres and the removal of the portion of the cathode electrode covering the spheres, or the removal of the spheres and the removal of the portions of the cathode electrode, insulating layer and gate electrode covering the spheres do not necessarily have to occur at the same time. For example, when a part of the sphere remains after removing the portion of the cathode electrode covering the sphere or the portion of the insulating layer or the gate electrode in addition thereto, the remaining sphere may be removed later.
[349] In particular, in the case where the sphere is made of an organic material, for example, burning the sphere, for example, carbon monoxide, carbon dioxide and water vapor are generated, the pressure in the enclosed space near the sphere becomes high, and the cathode electrode near the sphere has a certain breakdown voltage limit. Rupture at the time exceeded. In accordance with the rupture of the tear, the portion of the cathode electrode covering the sphere scatters to form a raised portion and a recessed portion, and the sphere is removed. Further, when the sphere is burned, for example, the cathode, the insulating layer, and the gate electrode are ruptured by the same mechanism at a time point exceeding a breakdown voltage limit. In response to the rupture, portions of the cathode electrode, the insulating layer, and the gate electrode covering the sphere are scattered to form an opening at the same time as the ridge and the recess, and the sphere is removed. That is, before the spheres are removed, no openings exist in the insulating layer and the gate electrode, and openings are formed as the spheres are removed. At this time, some of the spheres may be carbonized in order to proceed with the initial stage of combustion of the spheres in the closed space. It is preferable to make the thickness of the portion of the cathode electrode covering the sphere thin enough to be scattered by the rupture. In addition, the thickness of the portions of the cathode electrode, the insulating layer and the gate electrode covering the spheres is preferably thin enough to be scattered by rupture, and particularly for the insulating layer, the thickness of the portion not covering the spheres is It is preferable to set it as about the diameter of a sphere.
[350] In the crater type field emission device (3) described later, although the sphere can be removed by the state change and / or chemical change of the sphere, since it does not involve the rupture of the cathode electrode, the removal is performed by an external force. Sometimes it's easy. In the crater type field emission device (4) described later, the opening is already completed at the time point before the removal of the sphere, but when the size of the opening is larger than the diameter of the sphere, the sphere is removed by an external force. can do. Here, the external force is a physical force such as injection pressure of air or inert gas, injection pressure of cleaning liquid, magnetic attraction force, electrostatic force, centrifugal force, and the like. In addition, in the [crater-type field emission element (No. 3)] or [crater-type field emission element (No. 1)], the cathode electrode of the part which covers a sphere, Alternatively, in some cases, since there is no need to scatter the insulating layer or the gate electrode, there is an advantage that no residue of the cathode electrode, the insulating layer or the gate electrode is generated.
[351] The sphere used as the [crater type field emission element (3)] or [crater type field emission element (4)] mentioned later has at least the surface which comprises a cathode electrode and an insulating layer or a gate electrode depending on a structure. It is preferable that it is comprised with the material which has big interfacial tension compared with each interfacial tension (surface tension) of a material. Accordingly, in [crater type field emission device (4)], the cathode electrode, the insulating layer, and the gate electrode do not cover at least the top of the sphere, and a state in which the opening is formed in the insulating layer and the gate electrode from the beginning is obtained. How large the diameter of the opening is, for example, the relationship between the thickness of the material constituting the cathode electrode, the insulating layer or the gate electrode and the diameter of the sphere, the method of forming the cathode electrode, the insulating layer or the gate electrode, the cathode It depends on the interfacial tension (surface tension) of the material constituting the electrode, insulating layer or gate electrode.
[352] In the later described [crater-type field emission device (3)] or [crater-type field emission device (4)], the sphere should just satisfy | fill the above-mentioned conditions regarding an interface tension at least. That is, the portion having an interfacial tension greater than the interfacial tension of the cathode electrode, the insulating layer and the gate electrode may be the whole even on the surface of the sphere, and the surface of the sphere and / or the entire constituent material may be an inorganic material, The organic material or any combination of inorganic and organic materials may be used. In the crater-type field emission device (3) or the crater-type field emission device (4), the cathode electrode and the gate electrode are made of a common metal material, and the insulating layer is made of a silicon oxide material such as glass. When it is comprised, the hydroxyl group derived from adsorption moisture on the surface of a metallic material, the dangling bond of Si-0 bond, and the hydroxyl group derived from adsorption moisture exist in the surface of an insulating layer, and it exists in the state of high hydrophilicity. is average. Therefore, it is particularly effective to use a sphere having a hydrophobic surface treatment layer. As a constituent material of the hydrophobic surface treatment layer, a fluororesin such as polydetrafluoroethylene may be mentioned. In the case where the sphere has a hydrophobic surface treatment layer, assuming that the inner portion of the hydrophobic surface treatment layer is referred to as a core material, the constituent material of the core material may be any of polymer materials other than glass, ceramics, and fluororesin. do.
[353] Although the organic material which comprises a sphere is not specifically limited, General-purpose high molecular material is preferable. However, in a polymer material having an extremely high degree of polymerization or an extremely high content of multiple bonds, the combustion temperature becomes too high, which may adversely affect the cathode electrode, the insulating layer, and the gate electrode when removing the spheres by combustion. Therefore, it is preferable to select a polymer material that can be burned or carbonized at a temperature at which there is no fear of adverse effects on them. In particular, when the insulating layer is formed using a material that requires firing in a later step, such as glass paste, a polymer material capable of burning or carbonizing at the firing temperature of the glass paste is selected from the viewpoint of reducing the number of steps as much as possible. It is desirable to. Since the typical baking temperature of glass paste is about 530 ° C, the burning temperature of such a polymer material is preferably about 350 to 500 ° C. Typical polymer materials include styrene, urethane, acrylic, vinyl, divinylbenzene, melamine, formaldehyde, and polymethylene homopolymers or copolymers. Alternatively, as a sphere, in order to secure a reliable arrangement on the first support, a fixed type sphere having an adhesive force may be used. As a sticking type sphere, the sphere which consists of acrylic resin can be illustrated.
[354] In addition, for example, a vinylidene chloride acrylonitrile copolymer may be used as an outer shell, an isobutane-containing foam as a foaming material, and an encapsulated heat-expandable microspare may be used as a sphere. In the crater type field emission device (1), when the thermal expansion micro spare is heated using such a thermal expansion micro spare, the outer polymer is softened and the contained isobutane is gasified and expanded. As a result, the hollow body of the spherical shape is about four times larger than before expansion. As a result, in [crater type field emission element (1)], the recessed part enclosed by the ridge | bulb and the ridge | bulb which emit | releases an electron, and reflecting a part of spherical shape can be formed in a cathode. In addition to these recesses and ridges, an opening through the gate electrode and the insulating layer may be formed. In addition, in this specification, expansion | swelling by the heating of a thermally expandable micro spare is also included in the concept of removal of a sphere. Thereafter, the thermally expandable microspare may be removed using a suitable solvent.
[355] In [crater type field emission element (1)], what is necessary is just to form the cathode electrode which coat | covers a sphere after arrange | positioning several spheres on a 1st support body. In this case, in the [crater-type field emission element (3)] or [crater-type field emission element (4)] mentioned later, a sphere is formed as a method of arranging several spheres on a 1st support body. The dry method sprayed on 1 support body is mentioned. For spreading the spheres, for example, in the field of manufacturing a liquid crystal display device, a technique of spreading a spacer for maintaining a constant panel interval can be applied. Specifically, what is called a spray gun which sprays a sphere from a nozzle with a pressurized gas can be used. In addition, when spraying a sphere from a nozzle, you may make it the state disperse | distributed in the volatile solvent. Alternatively, the spheres may be sprayed using an apparatus or a method commonly used in the field of electrostatic powder coating. For example, using a corona discharge, the sphere negatively charged by the electrostatic powder injection event can be injected toward the grounded first support. Since the sphere to be used is very small as mentioned later, when it spreads on a 1st support body, it adheres to the surface of a 1st support body by electrostatic force, for example, and does not fall easily from a 1st support body in a subsequent process. After arranging a plurality of spheres on the first support, pressurizing the spheres can eliminate the overlap of the plurality of spheres on the first support, and the spheres can be densely arranged in a single layer on the first support.
[356] Alternatively, a composition layer made of a composition obtained by dispersing a sphere and a cathode electrode material in a dispersion medium is formed on the first support, such as [crater type field emission device (2)] described later, and thus a plurality of the first support is formed on the first support. After disposing the spheres and coating the spheres with a cathode electrode made of the cathode electrode material, the dispersion medium may be removed. As a property of a composition, a slurry and a paste are possible, What is necessary is just to select the composition and viscosity of a dispersion medium suitably according to these desired properties. As a method of forming a composition layer on a 1st support body, the screen printing method is preferable. The cathode electrode material is typically preferably fine particles having a settling velocity in the dispersion medium slower than that of the sphere. Carbon, barium, strontium, iron are mentioned as a material which comprises such microparticles | fine-particles. After removing the dispersion medium, the cathode is fired as necessary. As a method of forming a composition layer on a 1st support body, the spray method, the dropping method, the spin coating method, the screen printing method is mentioned. In addition, while the spheres are disposed, the spheres are covered with a cathode electrode made of a cathode electrode material. However, depending on the method of forming the composition layer, it is necessary to pattern the cathode electrodes.
[357] Alternatively, in the later described crater-type field emission device (3) or crater-type field emission device (4), a composition layer made of a composition obtained by dispersing a sphere in a dispersion medium is formed on the first support. After disposing a plurality of spheres on the first support, the dispersion medium can be removed. As a property of a composition, a slurry and a paste are possible, What is necessary is just to select the composition and viscosity of a dispersion medium suitably according to these desired properties. Typically, the dispersion medium can be removed by evaporation, using an organic solvent such as isopropyl alcohol as the dispersion medium. As a method of forming a composition layer on a 1st support body, the spray method, the dropping method, the spin coating method, the screen printing method is mentioned.
[358] However, the gate electrode and the cathode electrode have an angle formed by a projection image of the stripe-type gate electrode and the projection image of the stripe-type cathode electrode extending by 90 degrees. The electrons are emitted from the ridges patterned and positioned in the overlapping region, so that the ridges may exist only in the overlapping region functionally, even if the ridges and the recesses exist in regions other than the overlapping region. Such ridges and recesses do not function to emit electrons at all while being covered with the insulating layer, and therefore, even if the spheres are placed on the entire surface, no problem occurs.
[359] On the other hand, when the portions of the cathode electrode, the insulating layer and the gate electrode (gate electrode) covering the spheres are removed, the arrangement positions of the individual spheres and the formation positions of the openings correspond one-to-one. Openings are also formed in the region of. Hereinafter, the openings formed in regions other than the overlapping region are referred to as "invalid openings" and are distinguished from the original openings that contribute to the electron emission. By the way, even if an invalid opening is formed in a region other than the overlapping region, the invalid opening does not function at all as a field emission element, and does not adversely affect the operation of the field emission element formed in the overlapping region. The reason is that even if the ridge and the recess are exposed at the bottom of the invalid opening, the gate electrode is not formed at the upper end of the invalid opening, and even if the gate electrode is formed at the upper end of the invalid opening, the ridge and This is because the recess is not exposed, the ridge and the recess are not exposed at the bottom of the ineffective opening, the gate electrode is not formed at the upper end, and only the surface of the first support is exposed. to be. Therefore, even if the sphere is placed on the entire surface, no problem occurs. In addition, the hole formed on the boundary line between an overlapping area | region and another area | region is contained in an opening part.
[360] The diameter of the sphere can be selected according to the desired opening diameter, the diameter of the recessed portion, the display screen dimension of the display device constructed using the field emission elements, the number of pixels, the dimensions of the overlapping region, and the number of field emission elements to form one pixel. Although it can be, it is preferable to select in the range of 0.1-10 micrometers. For example, the spheres marketed as spacers of liquid crystal display devices have a good particle size distribution of 1 to 3%, and therefore it is preferable to use them. The shape of the sphere is ideally a spherical but not necessarily a spherical. In addition, depending on the method of manufacturing the field emission device, as described above, any one of the opening and the ineffective opening may be formed at the place where the sphere is arranged, but on the first support, about 100 to 500,000 spheres / mm ² are formed. It is preferable to arrange at a density of. For example, if a sphere is placed on the first support at a density of about 10000 / mm ² , for example, if the size of the overlapping area is 0.5 mm × 0.2 mm, about 100 spheres are present in the overlapping area. As a result, about 100 ridges are formed. If the number of ridges of this number is formed in one overlapping area, the nonuniformity of the diameter of the concave portion due to the particle size distribution and the spherical nonuniformity of the sphere is approximately averaged, and practically, one pixel (or one) The emission electron current density and luminance per subpixel) become substantially uniform.
[361] In [crater type field emission element (1)] or [crater type field emission element (2)] to [crater type field emission element (4)] mentioned later, a part of the shape of a sphere comprises an electron emission part. It is reflected in the shape of the recess. The profile of the tip of the ridge may have irregular irregularities or a smooth shape. In particular, in the [crater-type field emission device (1)] or [crater-type field emission device (2)], the tip is a cathode. Since it is formed by the breakage of the electrode, the tip portion of the ridge is likely to be irregular. If the tip portion becomes sharp due to breakage, the tip portion may function as a highly efficient electron emitting portion, which is suitable. In crater-type field emission elements (1) to [crater-type field emission elements (4)], all of the ridges surrounding the recesses are substantially annular, and the recesses and the ridges in this case are the whole. It is shaped like a crater or caldera.
[362] The arrangement of the ridges on the first support may be regular or random, depending on how the spheres are arranged. When the dry method or the wet method described above is adopted, the arrangement of the ridges on the first support is random.
[363] In the [crater type field emission element (1)] to [crater type field emission element (4)], when opening part is formed in an insulating layer after formation of an insulating layer, in order to prevent damage to the front-end | tip of a ridge part, It is good also as a structure which forms a protective layer after obtaining a ridge and removes a protective layer after formation of an opening part. Chromium can be mentioned as a material which comprises a protective layer.
[364] Hereinafter, referring to FIGS. 22A, 22B, 23A, 23B, 24A, 24B, and 25A, 25B, FIG. Although the manufacturing method of the field emission element of the crater type field emission element (1) is demonstrated, FIG. 22A, FIG. 23A, and FIG. 24A are typical partial cross-sectional views, FIG. (A) and (B) are typical partial cross-sectional views, and FIGS. 22B, 23B and 24B are FIGS. 22A and 23A. And a partial perspective view schematically showing a wider range than in FIG. 24A.
[365] [Process-800]
[366] First, the cathode electrode 112 covering the plurality of spheres 70 is formed on the first support 11. Specifically, first, the sphere 70 is disposed on the entire surface of the first support 11 made of, for example, a glass substrate. The sphere 70 is made of, for example, a polymethylene polymer material, and has an average diameter of about 5 µm and a particle size distribution of less than 1%. The spherical body 70 is randomly arrange | positioned on the 1st support body 11 with the density of 10000 / mm <^2> using a spray gun. Spraying using a spray gun may be either a method of spraying a sphere by mixing with a volatile solvent or a method of spraying from a nozzle in a powder state. The arranged sphere 70 is held on the first support 11 by electrostatic force. This state is shown to FIG. 22 (A) and (B).
[367] [Process-810]
[368] Next, the cathode electrode 112 is formed on the sphere 70 and the first support 11. 23A and 23B show the state where the cathode electrode 112 is formed. The cathode electrode 112 &quot; can be formed by, for example, screen printing carbon paste in a stripe pattern. At this time, since the sphere 70 is disposed on the entire surface of the first support 11, the sphere 70 is not covered with the cathode electrode 112, as shown in FIG. 23B. Of course there is. Next, in order to remove the moisture and the solvent contained in the cathode electrode 112 and to planarize the cathode electrode 112, the cathode electrode 112 is dried at 150 ° C., for example. As this temperature, the sphere 70 causes no state change and / or chemical change at all. In addition, the cathode electrode conductive material layer constituting the cathode electrode 112 is formed on the entire surface by switching to screen printing using carbon paste as described above, and the cathode material conductive material layer is formed using a conventional lithography technique and dry method. The stripe cathode electrode 112 may be formed by patterning using an etching technique. In the case of applying the lithography technique, the resist layer is usually formed by the spin coating method. However, if the rotational speed of the first support 11 during spin coating is about 50,000 rpm and the rotation time is about several seconds, the sphere 70 is dropped. Or on the first support 11 without being displaced.
[369] [Process-820]
[370] Next, by removing the sphere 70, the portion of the cathode electrode 112 covering the sphere 70 is removed, and thus, the plurality of raised portions 112A and the raised portions 112A that emit electrons. A cathode electrode 112 is formed which has a recess 112B that is enclosed and reflects a part of the shape of the sphere 70. This state is shown to FIG. 24 (A) and (B). Specifically, the sphere 70 is combusted by heating the cathode electrode 112 and heating at about 530 ° C. As the sphere 70 burns, the pressure in the enclosed space in which the sphere 70 is trapped increases, and the portion of the cathode electrode 112 covering the sphere 70 ruptures and is removed at a time point exceeding a breakdown voltage limit. As a result, the raised portions 112A and the recessed portions 112B are formed in a portion of the cathode electrode 112 formed on the first support 11. In addition, when a part of a sphere remains as a residue after removing a sphere, although it is based also on the material which comprises the sphere to be used, what is necessary is just to remove a residue using a suitable washing | cleaning liquid.
[371] [Process-830]
[372] Thereafter, an insulating layer 13 is formed on the cathode electrode 112 and the first support 11. Specifically, for example, the glass paste is screen printed on the entire surface with a thickness of about 5 μm. Next, in order to remove the water | moisture content and the solvent contained in the insulating layer 13, and to planarize the insulating layer 13, the insulating layer 13 is dried, for example at 150 degreeC. As described above, the SiO ₂ film may be formed by screen printing using glass paste, for example, by plasma CVD.
[373] [Process-840]
[374] Next, a stripe gate electrode 14 is formed on the insulating layer 13 (see FIG. 25A). The gate electrode 14 can be formed, for example, by screen printing carbon paste in a stripe pattern. At this time, the direction in which the projected image of the striped gate electrode 14 extends forms an angle of 90 degrees with the direction in which the projected image of the striped cathode electrode 112 extends. Next, in order to remove the moisture and the solvent contained in the gate electrode 14 and to planarize the gate electrode 14, for example, the gate electrode 14 is dried at 150 ° C, and then the gate electrode 14 and The material which comprises the insulating layer 13 is baked. In addition, the gate electrode material layer constituting the gate electrode 14 is formed on the entire surface of the insulating layer 13 by switching to screen printing using carbon paste, and the gate electrode material layer is then subjected to conventional lithography techniques and dry etching. It can also be patterned using techniques.
[375] [Process-850]
[376] Thereafter, an opening 15 is formed in the gate electrode 14 and the insulating layer 13 in the overlapping region where the projection image of the gate electrode 14 and the projection image of the cathode electrode 112 overlap, and thus, the opening A plurality of raised portions 112A and recessed portions 112B are exposed at the bottom of 15. Formation of the opening part 15 can be performed by formation of a resist mask by a conventional lithography technique, and etching using a resist mask. However, it is preferable to perform etching on the conditions which can ensure a sufficiently high etching selectivity with respect to the cathode electrode 112. In addition, after forming the raised part 112A, it is preferable to form the protective layer which consists of chromium, for example, and to form the opening part 15, and to remove a protective layer. Thereafter, the resist mask is removed. In this way, the field emission device shown in FIG. 25B can be obtained.
[377] Further, as a modification of the manufacturing method of the [crater type field emission device (No. 1)], [Step-830] to [Step-850] are performed after [Step-810], and then [Step-820]. You can also run]. In this case, the combustion of the spheres and the firing of the materials constituting the gate electrode 14 and the insulating layer 13 may be performed at the same time.
[378] In addition, after [Step-810], [Step-830] is performed, and in the same step as [Step-840], a stripe-shaped gate electrode having no opening is formed on the insulating layer, and then [ Step 820]. As a result, portions of the cathode electrode 112, the insulating layer 13, and the gate electrode 14 covering the sphere 70 are removed, and then the openings penetrating the gate electrode 14 and the insulating layer 13 are removed. Is formed, and the electron-emitting part consisting of the raised part 112A which emits electrons, and the recessed part 112B which is surrounded by the raised part 112A and reflects a part of the shape of the sphere 70, the bottom part of an opening part It may be formed on the cathode electrode 112 located at. That is, the combustion of the sphere 70 causes the pressure of the closed space in which the sphere 70 is trapped to rise, so that the cathode electrode 112, the insulating layer 13, and the gate electrode 14 in the portion covering the sphere are formed. At the time when the pressure resistance limit was exceeded, the rupture occurred, and an opening was formed at the same time as the ridge 112A and the recess 112B, and the sphere 70 was removed. The opening penetrates through the gate electrode 14 and the insulating layer 13 and reflects a part of the shape of the sphere 70. Further, at the bottom of the opening, a recess 112B surrounded by the raised portion 112A and the raised portion 112A that emits electrons and reflecting a part of the shape of the sphere 70 remains.
[379] Crater type field emission device (2)
[380] Next, although the manufacturing method of [the crater type field emission element (2)] is demonstrated with reference to FIG. 26 (A)-(C), the some sphere 70 is arrange | positioned on the 1st support body 11 The step of forming a composition layer 71 made of a composition obtained by dispersing the sphere 70 and the cathode electrode material in the dispersion medium on the first support 11, and then a plurality of spheres on the first support 11. (70) is disposed, the sphere is covered with a cathode electrode 112 made of a cathode electrode material, and then the dispersion medium is removed, that is, the wet method is a point of the [crater type field emission device (1)]. It is different from the manufacturing method.
[381] [Process-900]
[382] First, the plurality of spheres 70 are disposed on the first support 11. Specifically, the composition layer 71 which consists of the composition which disperse | distributes the sphere 70 and the cathode electrode material 71B in 71 A of dispersion mediums is formed on the 1st support body 11. As shown in FIG. That is, for example, using isoprophyl alcohol as the dispersion medium 71A, a cathode 70 made of a polymethylene polymer material having an average diameter of about 5 μm and carbon particles having an average diameter of about 0.05 μm are used as the cathode electrode material. The composition formed by dispersing in 71A of dispersion mediums as 71B is screen-printed stripe-shaped on the 1st support body 11, and the composition layer 71 is formed. In FIG. 26A, the state immediately after formation of the composition layer 71 is shown.
[383] [Process-910]
[384] Among the composition layers 71 held by the first support 11, the spheres 70 are sedimented and disposed on the first support 11, and at the same time, on the first support 11 from the spheres 70. The cathode electrode material 71B is settled over, and the cathode electrode 112 which consists of the cathode electrode material 71B is formed. Thus, the plurality of spheres 70 may be disposed on the first support 11, and the spheres 70 may be covered with the cathode electrode 112 made of a cathode electrode material. This state is shown in FIG.
[385] [Process-920]
[386] Thereafter, the dispersion medium 71A is removed by evaporation, for example. This state is shown in FIG.
[387] [Process-930]
[388] Subsequently, by carrying out the same steps as in [Step-820] to [Step-850] of the [crater type field emission device (part 1)], or a modification of the manufacturing method of [crater type field emission device (part 1)]. The same field emission device as shown in Fig. 25B can be completed.
[389] Crater-type field emission device (3)]
[390] Next, the manufacturing method of [crater type field emission element (No. 3)] is demonstrated, but the process of forming a stripe type cathode electrode on a 1st support body more specifically,
[391] Disposing a plurality of spheres on the first support,
[392] A step of forming on the first support a cathode electrode having a plurality of raised portions for emitting electrons and a recessed portion surrounded by each raised portion and reflecting a part of the shape of the sphere, wherein each raised portion is formed around the sphere. and,
[393] Process of removing spheres,
[394] Is done. Arrangement of the some sphere on a 1st support body is performed by spraying of a sphere. In addition, the sphere has a hydrophobic surface treatment layer. [Cater's field emission device (3)] is described below with reference to Figs. 27A to 27C.
[395] [Process-1000]
[396] First, the plurality of spheres 170 are disposed on the first support 11. Specifically, a plurality of spheres 170 are disposed on the entire surface of the first support 11 made of a glass substrate. This sphere 170 is formed by, for example, coating a core material 170A made of a divinylbenzene polymer material with a surface treatment layer 170B made of polytetrafluoroethylene resin, and having an average diameter of about 5 μm, The particle size distribution is less than 1%. The spheres 170 are randomly disposed on the first support 11 at a density of approximately 100 / mm ² using a spray gun. The arranged spheres 170 are adsorbed onto the first support 11 by electrostatic force. FIG. 27A shows a state where the process up to this point is completed.
[397] [Step-1010]
[398] Next, each of the raised portions 112A has a plurality of raised portions 112A that emit electrons, and a recessed portion 112B that is surrounded by each raised portion 112A and reflects a part of the shape of the sphere 170. The cathode electrode 112 formed around the sphere 170 is formed on the first support 11. Specifically, as described in the "crater type field emission device (part 1)", for example, carbon paste is screen-printed in a stripe shape, but in the "crater type field emission device (part 3)", the sphere 170 Since the surface of the surface is hydrophobic by the surface treatment layer 170B, the carbon paste screen-printed on the sphere 170 immediately bounces off and is deposited around the sphere 170 to form the ridge 112A. do. The tip portion 112C of the raised portion 112A is not as pointed as in the case of the [crater type field emission device 1]. The portion of the cathode electrode 112 that enters between the sphere 170 and the first support 11 becomes the recess 112B. In FIG. 27B, although a gap exists between the cathode electrode 112 and the sphere 170, the cathode electrode 112 and the sphere 170 may be in contact with each other. Thereafter, the cathode electrode 112 is dried at, for example, 150 ° C. The state which the process to here is complete | finished is shown in FIG. 27B.
[399] [Step-1020]
[400] Next, the sphere 170 is removed on the first support 11 by applying an external force to the sphere 170. As a specific removal method, washing | cleaning and injection of a compressed gas are mentioned. The state which the process to here is complete | finished is shown in FIG.27 (C). In addition, the removal of a sphere can also remove a sphere more specifically, for example, by combustion, according to the state change and / or chemical change of a sphere. The same applies to the "crater type field emission device (4)" described below.
[401] [Step-1030]
[402] Subsequently, by performing [Step-830] to [Step-850] of the [crater type field emission device (1)], a field emission device substantially the same as that shown in Fig. 25B can be obtained.
[403] Further, as a modification of the manufacturing method of the [crater type field emission device (3)], after [step-1010], [step-830] to [step-] of the [crater type field emission device (1)] 850], followed by [step-1020].
[404] Crater-type field emission device (4)
[405] Next, a description will be given of a method of manufacturing the crater type field emission device (4). In the method of manufacturing the field emission device, the step of forming a striped cathode electrode on the first support is more specifically. Is,
[406] Disposing a plurality of spheres on the first support,
[407] Forming a cathode electrode on the first support having a plurality of raised portions for emitting electrons and a recessed portion surrounded by each raised portion and reflecting a part of the shape of the sphere, wherein each raised portion is formed around the sphere;
[408] Is done. In addition, when forming an insulating layer in the whole surface, the insulating layer in which the opening part was formed above the sphere is formed on a cathode electrode and a 1st support body. The sphere is removed after the formation of the opening. In the manufacturing method of the field emission element of [Cray-type field emission element (4)], arrangement | positioning of several spheres on a 1st support body is performed by spraying of a sphere. In addition, the sphere has a hydrophobic surface treatment layer. The crater type field emission device (4) will be described below with reference to FIGS. 28A and 28B and FIGS. 29A and 29B.
[409] [Step-1100]
[410] First, the plurality of spheres 170 are disposed on the first support 11. Specifically, the same process as that of [Step-1000] of [Clarter Field Emission Device (Part 3)] is performed.
[411] [Step-1110]
[412] Subsequently, each of the raised portions 112A has a plurality of raised portions 112A that emit electrons, and a recessed portion 112B that is surrounded by each raised portion 112A and reflects a part of the shape of the sphere 170. The cathode electrode 112 formed around the sphere 170 is formed on the first support 11. Specifically, the same process as in [Step-1010] of [Clarter Field Emission Device (Part 3)] is performed.
[413] [Step-1120]
[414] Next, an insulating layer 113 having an opening 15A formed above the sphere is formed on the cathode electrode 112 and the first support 11. Specifically, for example, the glass paste is screen printed on the entire surface with a thickness of about 5 μm. Screen printing using glass paste can be carried out as in [crater type field emission device (1)], but since the surface of the sphere 170 is hydrophobic by the surface treatment layer 170B, the sphere 170 The glass paste screen-printed on it immediately bounces off, causing the portion on the sphere 170 of the insulating layer 113 to contract by its surface tension. As a result, the top portion of the sphere 170 is not covered with the insulating layer 113 and is exposed in the opening 15A. This state is shown in FIG. In the illustrated example, the diameter of the upper end of the opening 15A is larger than the diameter of the sphere 170, but when the interfacial tension of the surface treatment layer 170B is smaller than the interfacial tension of the glass paste, The diameter tends to be small. In contrast, when the interfacial tension of the surface treatment layer 170B is significantly larger than the interfacial tension of the glass paste, the diameter of the opening 15A tends to be large. Thereafter, the insulating layer 113 is dried at, for example, 150 ° C.
[415] [Step-1130]
[416] Next, a gate electrode 114 having an opening 15B communicating with the opening 15A is formed on the insulating layer 113. Specifically, for example, carbon paste is screen printed in a stripe shape. Screen printing using carbon paste may be performed in the same manner as in [crater type field emission device (1)], but since the surface of the sphere 170 is hydrophobic by the surface treatment layer 170B, the sphere 170 The carbon paste screen-printed on it immediately bounces and contracts by its surface tension, leaving the state attached only to the surface of the insulating layer 113. At this time, the gate electrode 114 may be formed so as to be slightly inserted into the opening 15A from the opening end of the insulating layer 113 as shown. Thereafter, the gate electrode 114 is dried at, for example, 150 ° C. The state which the process to here is complete | finished is shown in FIG. 28 (B). In addition, when the interfacial tension of the surface treatment layer 170B is smaller than the interfacial tension of the carbon paste, the diameter of the opening 15A tends to decrease. In contrast, when the interfacial tension of the surface treatment layer 170B is significantly larger than the interfacial tension of the carbon paste, the diameter of the opening 15A tends to be large.
[417] [Step-1140]
[418] Next, the sphere 170 exposed to the bottom of the openings 15B and 15A is removed. Specifically, the sphere 170 is combusted by simultaneously firing the cathode electrode 112, the insulating layer 113, and the gate electrode 114, and heating the glass paste at about 530 ° C., which is a typical firing temperature. At this time, unlike the [crater type field emission device (1)], since the openings 15A and 15B are formed in the insulating layer 113 and the gate electrode 114 from the beginning, the cathode electrode 112 or the insulation is formed. Part of the layer 113 and the gate electrode 114 do not scatter, and the sphere 170 is quickly removed. In addition, when the diameter of the upper end of the opening part 15A, 15B is larger than the diameter of the sphere 170, even if it does not burn the sphere 170, the sphere 170 is influenced by external force, such as washing | cleaning or injection of a compressed gas, for example. It is possible to remove). The state which the process to here is complete | finished is shown in FIG. 29 (A).
[419] [Process-1150]
[420] Thereafter, a part of the insulating layer 113 corresponding to the side wall surface of the opening 15A is isotropically etched to complete the field emission device shown in FIG. 29B. Here, the end of the gate electrode 114 faces downward, but this is preferable for increasing the electric field strength in the opening 15.
[421] [Edge type field emission device]
[422] A typical partial cross-sectional view of an edge type field emission device is shown in FIG. 30A. The edge type field emission device includes an insulating layer 13 formed on the first support 11 and the cathode electrode 212, a stripe type cathode electrode 212 formed on the first support 11, and insulation. A stripe gate electrode 14 formed on the layer 13 is formed, and an opening 15 is formed in the gate electrode 14 and the insulating layer 13. The edge portion 212A of the cathode electrode 212 is exposed at the bottom of the opening 15. By applying a voltage to the cathode electrode 212 and the gate electrode 14, electrons are emitted from the edge portion 212A of the cathode electrode 212.
[423] In addition, as shown in FIG. 30B, a recessed portion 11A may be formed in the first support 11 below the cathode electrode 212 in the opening 15. As shown in FIG. 30C, a schematic partial cross-sectional view of the first gate electrode 14A, the first support 11 and the first gate electrode 14A formed on the first support 11 is shown. The first insulating layer 13A formed on the first insulating layer 13A, the cathode electrode 212 formed on the first insulating layer 13A, and the second insulating layer formed on the first insulating layer 13A and the cathode electrode 212 13B and the second gate electrode 14B formed on the second insulating layer 13B. The opening 15 is formed in the second gate electrode 14B, the second insulating layer 13B, the cathode electrode 212 and the first insulating layer 13A, and the cathode is formed on the sidewall of the opening 15. The edge portion 212A of the electrode 212 is exposed. By applying a voltage to the cathode electrode 212, the first gate electrode 14A, and the second gate electrode 14B, electrons are emitted from the edge portion 212A of the cathode electrode 212.
[424] For example, a method of manufacturing the edge type field emission device shown in FIG. 30C will be described below with reference to FIGS. 31A to 31C which are schematic partial cross-sectional views of a first support or the like. .
[425] [Process-1200]
[426] First, a tungsten film having a thickness of about 0.2 μm is formed on the first support 11 made of, for example, a glass substrate by a sputtering method, and the tungsten film is patterned by a photolithography technique and a dry etching technique in a usual procedure. Thus, the first gate electrode 14A is formed. Next, after forming the first insulating layer 13A having a thickness of 0.3 μm made of SiO ₂ on the entire surface, a striped cathode electrode 212 made of tungsten is formed on the first insulating layer 13A. (See FIG. 31A).
[427] [Step-1210]
[428] Thereafter, a second insulating layer 13B having a thickness of 0.7 μm, for example, made of SiO ₂ is formed on the entire surface, and then a stripe-shaped second gate electrode 14B is formed on the second insulating layer 13B. It forms (refer FIG. 31 (B)). The constituent material and thickness of the second gate electrode 14B may be the same as or different from the first gate electrode 14A.
[429] [Step-1220]
[430] Next, after the resist layer 67 is formed over the entire surface, the resist opening 67A is formed to partially expose the surface of the second gate electrode 14B on the resist layer 67. The planar shape of the resist opening 67A is rectangular. The long side of a rectangle is about 100 micrometers, and the short side is several micrometers-10 micrometers. Subsequently, the second gate electrode 14B exposed on the bottom surface of the resist opening portion 67A is anisotropically etched by, for example, an RIE method to form an opening. Next, the second insulating layer 13B exposed on the bottom of the opening is isotropically etched to form an opening (see FIG. 31C). Since the second insulating layer 13B is formed using SiO ₂ , wet etching using a buffered hydrofluoric acid aqueous solution is performed. The wall surface of the opening formed in the second insulating layer 13B retreats from the opening end surface of the opening formed in the second gate electrode 14B, but the amount of retreat at this time can be controlled in accordance with the length of the etching time. Here, wet etching is performed until the bottom wall of the opening formed in the second insulating layer 13B retreats from the opening end surface of the opening formed in the second gate electrode 14B.
[431] Next, the cathode electrode 212 exposed at the bottom of the opening is dry-etched under the condition that ions are the main etching species. As dry etching having ions as the main etching species, anisotropic etching generally proceeds because ions that are charged particles can be accelerated by applying a bias voltage to the etched object or by interacting with the plasma and the magnetic field. The machined surface of the object to be etched is a vertical wall. However, in this step, the cathode electrode 212 is caused by a slight presence of an incident component having an angle other than vertical even among the main etching species in the plasma, and generation of the inclined incident component also by scattering at the end of the opening. In the exposed surface of, the main etching species enters to a certain extent also to the area | region which is blocked by the opening part and which ion does not reach. In this case, the probability of incidence is higher for the main etching species having a smaller incident angle with respect to the normal of the first support 11, and the probability for incidence is lower for the main etching species having a larger incident angle.
[432] Therefore, the position of the upper end of the opening formed in the cathode electrode 212 is approximately the same as the lower end of the opening formed in the second insulating layer 13B, but the position of the lower end of the opening formed in the cathode electrode 212 protrudes from the upper end thereof. It becomes the state that became. That is, the thickness of the edge portion 212A of the cathode electrode 212 becomes thinner toward the tip portion in the protruding direction, and the edge portion 212A becomes sharper. For example, by using SF ₆ as the etching gas, good processing of the cathode electrode 212 can be performed.
[433] Next, the first insulating layer 13A exposed on the bottom surface of the opening formed in the cathode electrode 212 is isotropically etched to form an opening in the first insulating layer 13A to complete the opening 15. . Here, wet etching using a buffered hydrofluoric acid solution is performed. The wall surface of the opening formed in the first insulating layer 13A retreats from the lower end of the opening formed in the cathode electrode 212. The amount of retreat at this time can be controlled depending on the length and length of the etching time. If the resist layer 67 is removed after completion of the opening 15, the configuration shown in Fig. 30C can be obtained.
[434] [Spint Field Emission Device: Modification of Manufacturing Method-1]
[435] First, a modification of the manufacturing method of the spin type field emission device described in [Spint type field emission device] is shown in FIGS. 32 (A), (B) and FIG. 33, which is a typical partial cross-sectional view of the first support or the like. Although description is made with reference to (A), (B) and FIG. 34 (A), (B), this spin type field emission element (refer FIG. 35) is basically manufactured according to the following process. In other words,
[436] (a) forming a cathode electrode 12 on the first support 11
[437] (b) forming an insulating layer 13 on the first support 11 including the cathode electrode 12
[438] (c) forming a gate electrode 14 on the insulating layer 13
[439] (d) forming an opening 15 having the cathode electrode 12 exposed at the bottom thereof, at least in the insulating layer 13
[440] (e) forming a conductive material layer 81 for forming an electron-emitting part on the entire surface including the inside of the opening 15;
[441] (f) A step of forming the mask material layer 82 on the conductive material layer 81 so as to block the region of the conductive material layer 81 located at the center of the opening 15.
[442] (g) Anisotropy in which the etching rate in the direction perpendicular to the first support 11 of the conductive material layer 81 is faster than the etching rate in the direction perpendicular to the first support 11 of the mask material layer 82. By etching the conductive material layer 81 and the mask material layer 82 under the etching conditions, the electron-emitting electrode 16E having the awl-shaped tip portion of the conductive material layer 81 is exposed in the opening 15. Process of forming on cathode electrode 12
[443] [Step-1300]
[444] First, for example, a cathode electrode 12 made of chromium (Cr) is formed on the first support 11 formed by forming a SiO ₂ layer having a thickness of about 0.6 μm on a glass substrate. Specifically, a plurality of cathode electrodes are deposited on the first support 11 by depositing a cathode electrode conductive material layer made of chromium by a sputtering method or a CVD method, and patterning the cathode electrode conductive material layer. (12) can be formed. The width of the cathode electrode 12 is, for example, 50 µm, and the space between the cathode electrode 12 is, for example, 30 µm. Then, the insulating layer 13 which consists of SiO2 by the plasma CVD method using TEOS (tetraethoxysilane) as a raw material gas on the cathode electrode 12 and the 1st support body 11 on the whole surface specifically, is carried out. ). The thickness of the insulating layer 13 shall be about 1 micrometer. Next, a stripe type gate electrode 14 extending in parallel with the cathode electrode 12 in the direction perpendicular to the cathode electrode 12 is formed.
[445] Next, the opening 15 penetrating the gate electrode 14 and the insulating layer 13 in an overlapping region of the striped cathode electrode 12 and the striped gate electrode 14, that is, one pixel region. To form. The planar shape of the opening part 15 is circular with a diameter of 0.3 micrometer, for example. The openings 15 are usually formed in hundreds to one thousand in one pixel region (one redundant region). The opening 15 is formed by using a resist layer formed by a normal photolithography technique as a mask, and first, the opening 15 is formed in the gate electrode 14, and then the opening ( 15). After completion of the RIE, the resist layer is removed by ashing (see Fig. 32A).
[446] [Step-1310]
[447] Next, the adhesion layer 80 is formed in the whole surface by sputtering method (refer FIG. 32 (B)). The adhesion layer 80 has adhesion between the insulating layer 13 exposed on the sidewall surface of the region 15 and the region where no gate electrode is formed, and the conductive material layer 81 formed entirely in the next step. It is a layer formed to increase. Assuming that the conductive material layer 81 is formed of tungsten, the adhesion layer 80 made of tungsten is formed to a thickness of 0.07 μm by the DC sputtering method.
[448] [Step-1320]
[449] Next, on the entire surface including the opening 15, the conductive material layer 81 for electron emission portion formation made of tungsten having a thickness of about 0.6 mu m is formed by hydrogen reduction pressure reduction CVD method (FIG. 33A). Reference). On the surface of the formed conductive material layer 81, a recess 81A reflecting the step between the top surface and the bottom surface of the opening 15 is formed.
[450] [Step-1330]
[451] Next, the mask material layer 82 is formed so as to block the region (specifically, the recess 81A) of the conductive material layer 81 located at the center of the opening 15. Specifically, first, a resist layer having a thickness of 0.35 μm is formed on the conductive material layer 81 as the mask material layer 82 by spin coating (see FIG. 33B). The mask material layer 82 absorbs the recessed portions 81A of the conductive material layer 81 to form a substantially flat surface. Next, the mask material layer 82 is etched by the RIE method using an oxygen-based gas. This etching ends when the flat surface of the conductive material layer 81 is exposed. Thereby, the mask material layer 82 remains so that the recessed part 81A of the electrically conductive material layer 81 may be flattened (refer FIG. 34 (A)).
[452] [Step-1340]
[453] Next, the conductive material layer 81, the mask material layer 82, and the adhesion layer 80 are etched to form a conical electron emission electrode 16E (see FIG. 34B). The etching of these layers is performed under anisotropic etching conditions in which the etching rate of the conductive material layer 81 is faster than the etching rate of the mask material layer 82. Etching conditions are illustrated in Table 2 below.
[454] TABLE 2
[455] [Etching Conditions of the Conductive Material Layer 81, etc.]
[456] SF ₃ flow rate: 150 SCCM
[457] O ₂ flow rate: 30 SCCM
[458] Ar flow rate: 90 SCCM
[459] Pressure: 35 Pa
[460] RF power: 0.7 kW (13.56 MHz)
[461] [Step-1350]
[462] Thereafter, when the sidewall surface of the opening 15 formed in the insulating layer 13 is retracted in the opening 15 under isotropic etching conditions, the field emission device shown in FIG. 35 is completed. Isotropic etching can be performed by dry etching using radical as a main etching species or wet etching using an etching solution like chemical dry etching. As the etching solution, for example, a 1: 100 (volume ratio) mixture of 49% hydrofluoric acid and pure water can be used.
[463] Here, the mechanism in which the electron emission electrode 16E is formed in [Step-1340] will be described with reference to FIGS. 36A and 36B. FIG. 36 (A) is a schematic diagram showing how the surface profile of an object to be etched changes at regular intervals as the etching progresses, and FIG. 36 (B) shows the etching time and the center of the opening 15. It is a graph showing the relationship with the thickness of an object to be etched. The thickness of the mask material layer in the center of the opening 15 is h _p , and the height of the electron emitting electrode 16E in the center of the opening 15 is h _e .
[464] Under the etching conditions shown in Table 2, the etching rate of the conductive material layer 81 is naturally faster than the etching rate of the mask material layer 82 made of the resist material. In the region where the mask material layer 82 does not exist, the conductive material layer 81 is immediately etched and starts, and the surface of the etched object descends quickly. On the other hand, in the region where the mask material layer 82 exists, etching of the conductive material layer 81 below does not start unless the mask material layer 82 is first removed, so that the mask material layer 82 as long as the etching is slow and the reduction rate of the water thickness etched (h _p decreasing interval), the mask material layer 82 for the first time, the reduction rate of the water thickness etched mask material layer 82 in the lost point, The same speed as the non-existent area (h _e reduction period). The starting time of the h _e reduction section is the slowest at the center of the opening 15 in which the mask material layer 82 has the maximum thickness, and the mask material layer 82 accelerates toward the periphery of the thin opening 15. In this manner, the cone-shaped electron emission electrode 16E is formed.
[465] The ratio of the etching rate of the conductive material layer 81 to the etching rate of the mask material layer 82 made of a resist material is referred to as "to resist selection ratio". This large resist select ratio is an important factor for determining the height and shape of the electron-emitting electrode 16E, with reference to Figs. 37A to 37C. FIG. 37A shows the case where the pair of resist selection ratios are relatively small, FIG. 37C shows the case where the resistivity selection ratio is relatively large, and FIG. 37B shows the electron emitting electrode in the middle thereof. The larger the resistivity selection ratio exhibiting the shape of (16E) is, the more the film emission of the conductive material layer 81 is compared with that of the mask material layer 82, so that the electron-emitting electrode 16E is higher. You can see that it becomes sharp. The resistivity selection ratio decreases when the ratio of the O ₂ flow rate to the SF ₆ flow rate is increased. In addition, when using an etching apparatus capable of changing the incident energy of ions by using a substrate bias together, the resistivity selection ratio can be lowered by increasing the RF bias power or lowering the frequency of the bias power supply. The value of the resistivity selection ratio is selected to be 1.5 or more, preferably 2 or more, more preferably 3 or more.
[466] In addition, in the above etching, a high selectivity must be ensured with respect to the gate electrode 14 and the cathode electrode 12, but there is no problem under the conditions shown in Table 2. The reason for this is that the material constituting the gate electrode 14 and the cathode electrode 12 is hardly etched by the fluorine-based etching species, and an etching selectivity of about 10 or more can be obtained under the above conditions.
[467] [Spint Field Emission Device: Variation of Manufacturing Method-2]
[468] Variant-2 of the manufacturing method of the spint type field emission device is Variant-1 of the manufacturing method of the spint type field emission device. In Variant-2 of the manufacturing method, it is possible to narrow the area of the conductive material layer blocked by the mask material layer than in Variant-1 of the manufacturing method. That is, in the modification-2 of the manufacturing method, an approximately funnel-shaped recess consisting of a columnar portion and an enlarged portion communicating with the upper end of the columnar portion is reflected on the surface of the conductive material layer by reflecting a step between the top surface and the bottom surface of the opening. In the step (f), the mask material layer is formed on the entire surface of the conductive material layer, and then the mask material layer and the conductive material layer are removed in the plane parallel to the surface of the first support body, thereby masking the mask material. Leave a layer.
[469] Hereinafter, variant-2 of the method for manufacturing the spin type field emission device is shown in FIGS. 38A, 38B, 39A, 39 and 40, which are typical partial cross-sectional views of a first support or the like. It demonstrates with reference to (A), (B).
[470] [Process-1400]
[471] First, the cathode electrode 12 is formed on the first support 11. The conductive material layer for the cathode electrode is, for example, a TiN layer (thickness 1 μm), a Ti layer (thickness 5 nm), an Al-Cu layer (thickness 0.4 μm), a Ti layer (thickness 5 nm), or a TiN layer by DC sputtering. (Thickness 0.02 μm) and Ti layer (0.02 μm) are laminated in this order to form a laminated film, and then the laminated film is formed by patterning the stripe. In the figure, the cathode electrode 12 is shown as a single layer. Next, on the entire surface, specifically, a plasma in which the insulating layer 13 having a thickness of 0.7 μm and TEOS (tetraethoxysilane) is used as the source gas on the first support 11 and the cathode electrode 12. It forms by CVD method. Subsequently, a stripe gate electrode 14 is formed on the insulating layer 13.
[472] Further, an etching stop layer 83 having a thickness of, for example, SiO ₂ , formed of SiO ₂ is formed on the entire surface. The etching stop layer 83 is not a functionally indispensable member of the field emission device, and serves to protect the gate electrode 14 during the etching of the conductive material layer 81 performed in a later step. Note that the etching stop layer 83 may be omitted when the gate electrode 14 can have sufficiently high etching resistance to the etching conditions of the conductive material layer 81. Thereafter, an opening 15 through which the cathode electrode 12 is exposed is formed in the bottom through the etching stop layer 83, the gate electrode 14, and the insulating layer 13 by the RIE method. In this way, the state shown in FIG. 38A is obtained.
[473] [Process-1410]
[474] Next, an adhesion layer 80 made of, for example, tungsten having a thickness of 0.03 μm is formed on the entire surface including the inside of the opening 15 (see FIG. 38B). Subsequently, the conductive material layer 81 for forming electron emission portions is formed on the entire surface including the inside of the opening 15. However, the conductive material layer 81 in the deformation-2 of the manufacturing method is formed so that the recess 81A deeper than the recess 81A described in the modification-1 of the manufacturing method is formed on the surface of the conductive material layer 81. Select the thickness. That is, by setting the thickness of the conductive material layer 81 appropriately, the enlarged portion communicating with the upper end of the columnar portion 81B and the upper end of the columnar portion 81B, reflecting the step difference between the upper and lower surfaces of the opening 15. An approximately funnel-shaped recess 81A formed of 81C can be formed on the surface of the conductive material layer 81.
[475] [Step-1420]
[476] Next, a mask material layer 82 made of copper (Cu) having a thickness of about 0.5 μm is formed on the entire surface of the conductive material layer 81 by, for example, electroless plating (FIG. 39A). Reference). Electroless plating conditions are shown in Table 3 below.
[477] TABLE 3
[478] Plating solution: Lactic acid copper (CuSO ₄ · 5H ₂ O) 7g / liter
[479] 20 ml / liter of formalin (37% HCHO)
[480] 10 g / liter sodium hydroxide (NaOH)
[481] 20 g / liter sodium potassium stannate
[482] Plating bath temperature: 50 ℃
[483] [Step-1430]
[484] Thereafter, the mask material layer 82 and the conductive material layer 81 are removed in a plane parallel to the surface of the first support 11, thereby leaving the mask material layer 82 on the columnar portion 81B ( (B) of FIG. 39). This removal can be performed, for example by chemical mechanical polishing (CMP method).
[485] [Process-1440]
[486] Next, under the anisotropic etching conditions in which the etching rate of the conductive material layer 81 and the adhesion layer 80 is faster than the etching rate of the mask material layer 82, the conductive material layer 81 and the mask material layer 82 The adhesion layer 80 is etched. As a result, an electron emission electrode 16E having an awl shape is formed in the opening 15 (see Fig. 40A). When the mask material layer 82 remains at the tip of the electron-emitting electrode 16E, the mask material layer 82 can be removed by wet etching using a dilute hydrofluoric acid solution.
[487] [Step-1450]
[488] Next, when the sidewall surface of the opening part 15 formed in the insulating layer 13 is retracted inside the opening part 15 under isotropic etching conditions, the field emission device shown in Fig. 40B is completed. At this time, the etching stop layer 83 is also removed. The isotropic etching may be the same as that described in Variation-1 of the manufacturing method.
[489] By the way, in the electron emission electrode 16E formed in the modification-2 of the manufacturing method, a sharper awl shape is achieved compared with the electron emission electrode 16E formed in the modification-1 of the manufacturing method. This is due to the difference between the shape of the mask material layer 82 and the ratio of the etching rate of the conductive material layer 81 to the etching rate of the mask material layer 82. This difference will be described with reference to FIGS. 41A and 41B. 41 (A) and (B) are diagrams showing how the surface profile of an object to be etched changes every constant time, and FIG. 41A is a case where a mask material layer 82 made of copper is used. FIG. 41B shows a case where a mask material layer 82 made of a resist material is used, respectively. In addition, for simplicity, it is assumed that the etching rate of the conductive material layer 81 and the etching rate of the adhesion layer 80 are equal, respectively, and the illustration of the adhesion layer 80 is omitted in FIGS. 41A and 41B. do.
[490] In the case where the mask material layer 82 made of copper is used (see FIG. 41A), the etching rate of the mask material layer 82 is sufficiently slower than that of the conductive material layer 81. The mask material layer 82 does not disappear, and therefore, the electron emission electrode 16E having a sharp tip can be formed. On the other hand, when the mask material layer 82 made of resist material is used (see FIG. 41B), the etching rate of the mask material layer 82 is much higher than that of the conductive material layer 81. Since it is not slow, the mask material layer 82 tends to disappear during etching, and therefore, the awl shape of the electron-emitting electrode 16E after the mask material layer disappears tends to be slowed down.
[491] The mask material layer 82 remaining in the columnar portion 81B also has the advantage that the shape of the electron-emitting electrode 16E is hardly changed even if the depth of the columnar portion 81B is slightly changed. That is, the depth of the columnar portion 81B may be changed by the thickness of the conductive material layer 81 or the variation of the step coverage, but the width of the columnar portion 81B is substantially constant regardless of the depth, so that the mask material The width of the layer 82 is also substantially constant, so that a large difference does not occur in the shape of the electron emitting electrode 16E finally formed. In contrast, in the mask material layer 82 remaining in the concave portion 81A, the width of the mask material layer also changes when the concave portion 81A is shallow or deep, so that the concave portion 81A is shallowly masked. The thinner the layer 82 is, the earlier the awl-shaped slowing down of the electron-emitting electrode 16E starts. The electron emission efficiency of the field emission device also varies depending on the potential difference between the gate electrode and the cathode electrode, the distance between the gate electrode and the cathode electrode, the work function of the constituent material of the electron emission unit, and the shape of the tip of the electron emission unit. For this reason, it is preferable to select the shape and etching rate of a mask material layer as mentioned above as needed.
[492] [Spint Field Emission Device: Modification of Manufacturing Method-3]
[493] Variant-3) of the production method is Variant-2) of the production method. In the modification -3) of the manufacturing method, in step (e), a substantially funnel-shaped recess consisting of a columnar portion and an enlarged portion communicating with the upper end of the columnar portion is reflected, reflecting the step between the top and bottom surfaces of the opening. The mask material is formed on the surface of the material layer, and in step (f), the mask material layer is formed on the entire surface of the conductive material layer, and then the mask material layer is removed on the conductive material layer and in the enlarged portion. Leave a layer. Variation-3 of the manufacturing method of the spin type field emission device will now be described with reference to FIGS. 42A, 42 and 43, which are schematic partial cross-sectional views of a first support or the like.
[494] [Process 1500]
[495] First, the formation of the mask material layer 82 shown in FIG. 39A is performed in the same manner as in [Step-1400] to [Step-1420] of Modification-2 of the manufacturing method, and then on the conductive material layer 81. By removing only the mask material layer 82 in the enlarged portion 81C, the mask material layer 82 is left in the columnar portion 81B (see FIG. 42A). At this time, by performing wet etching using, for example, a rare hydrofluoric acid solution, only the mask material layer 82 made of copper can be selectively removed without removing the conductive material layer 81 made of tungsten. The height of the mask material layer 82 remaining in the columnar portion 81B depends on the etching time, but the etching time is so long as the portion of the mask material layer 82 embedded in the enlarged portion 81C is sufficiently removed. It does not require some degree of rigor. The reason for this is that the discussion of the height of the mask material layer 82 is substantially the same as the discussion of the shallowness and depth of the columnar portion 81B described above with reference to FIG. This is because the height of the mask material layer 82 does not significantly affect the shape of the electron emission electrode 16E finally formed.
[496] [Step-1510]
[497] Next, the conductive material layer 81, the mask material layer 82, and the adhesion layer 80 are etched in the same manner as in the modification-2 of the manufacturing method, and the electron-emitting electrode as shown in Fig. 42B. To form (16E). Although the electron-emitting electrode 16E may have an auger shape as a whole as shown in Fig. 40A, of course, Fig. 42B shows a modification in which only the tip portion has an auger shape. Such a shape may occur when the height of the mask material layer 82 embedded in the columnar portion 81B is low, or when the etching rate of the mask material layer 82 is relatively high, but as the electron-emitting electrode 16E. There is no disruption in functionality.
[498] [Process-1520]
[499] Thereafter, when the sidewall surface of the opening 15 formed in the insulating layer 13 is retracted in the opening 15 under isotropic etching conditions, the field emission device shown in FIG. 43 is completed. The isotropic etching may be the same as that described in Variation-1 of the manufacturing method.
[500] [Spint Field Emission Device: Modification of Manufacturing Method-4]
[501] Variant-4 of the production method is Variant-1 of the production method. 44 shows a schematic partial sectional view of the spin type field emission device manufactured in Variation-4 of the manufacturing method. Variation-4 of the manufacturing method is different from Variation-1 of the manufacturing method in that the electron emitting portion is composed of a base portion 84 and an auger type electron emitting electrode 16E stacked on the base portion 84. It is at that point. Here, the base portion 84 and the electron-emitting electrode 16E are made of a different conductive material. Specifically, the base portion 84 is a member for adjusting the distance between the electron emission electrode 16E and the open end of the gate electrode 14, and also has a function as a resistor layer and contains polysilicon containing impurities. It is composed of layers. The electron emission electrode 16E is made of tungsten, and has an awl shape, more specifically, a cone shape. In addition, an adhesion layer 80 made of TiN is formed between the base portion 84 and the electron emission electrode 16E. The adhesion layer 80 is not an indispensable component in the function of the electron-emitting portion, but is formed for manufacturing reasons. The opening 15 is formed by the insulating layer 13 being cut out from directly under the gate electrode 14 over the upper end of the base portion 84.
[502] Variation-4 of the manufacturing method is described below with reference to FIGS. 45A, 45B, 46A, 47 and 47A which are typical partial cross-sectional views of the first support and the like. It demonstrates with reference to B).
[503] [Process-1600]
[504] First, the formation of the opening 15 is performed in the same manner as in [Step-1300] of Modification-1 of the manufacturing method. Subsequently, the base material forming conductive material layer 84A is formed on the entire surface including the opening 15. The conductive material layer 84A also functions as a resistor layer, is composed of a polysilicon layer, and can be formed by plasma CVD. Next, the planarization layer 85 which consists of a resist layer is formed in the whole surface so that the surface may become substantially flat (refer FIG. 45 (A)). Next, both layers are etched under the condition that the etching rates of the planarization layer 85 and the conductive material layer 84A become substantially equal together, and the bottom of the opening 15 is embedded with a base portion 84 having a flat top surface. (See FIG. 45 (B)). Etching can be performed by the RIE method using the etching gas containing a chlorine gas and an oxygen gas. Since the surface of the conductive material layer 84A is first flattened with the flattening layer 85 and then etched, the upper surface of the base portion 84 becomes flat.
[505] [Step-1610]
[506] Next, the adhesion layer 80 is formed on the whole surface containing the remainder of the opening 15, and the conductive material layer 81 for electron emission part formation is formed on the whole surface including the remainder of the opening 15. Then, the remainder of the opening 15 is filled with the conductive material layer 81 (see FIG. 46A). The adhesion layer 80 is a TiN layer having a thickness of 0.07 μm formed by the sputtering method, and the conductive material layer 81 is a 0.6 μm thick tungsten layer formed by the reduced pressure CVD method. The recessed part 81A is formed in the surface of the electrically-conductive material layer 81, reflecting the level | step difference between the upper end surface and the bottom surface of the opening part 15. As shown in FIG.
[507] [Step-1620]
[508] Next, a mask material layer 82 made of a resist layer is formed on the entire surface of the conductive material layer 81 so as to have a substantially flat surface (see FIG. 46 (B)). The mask material layer 82 absorbs the recess 81A on the surface of the conductive material layer 81 to form a flat surface. Next, the mask material layer 82 is etched by the RIE method using an oxygen-based gas (see FIG. 47A). This etching ends when the flat surface of the conductive material layer 81 is exposed. As a result, the mask material layer 82 remains flat in the recess 81A of the conductive material layer 81, and the mask material layer 82 is located at the center of the opening 15. It is formed to block the area of).
[509] [Step-1630]
[510] Next, the conductive material layer 81, the mask material layer 82, and the adhesion layer 80 are etched together in the same manner as in [Step-1340] of Modification-1 of the manufacturing method. An electron emission electrode 16E and an adhesion layer 80 having a conical shape corresponding to the size of the selectivity are formed, and the electron emission portion is completed (see FIG. 47B). Then, when the side wall surface of the opening part 15 formed in the insulating layer 13 is retracted inside the opening part 15, the field emission element shown in FIG. 44 can be obtained.
[511] [Spint Field Emission Device: Variation of Manufacturing Method-5]
[512] Variant-5 of the production method is Variant-2 of the production method. A typical partial cross-sectional view of the spin type field emission device manufactured in Variant-5 of the manufacturing method is shown in FIG. 49B. Variation-5 of the manufacturing method differs from Variation-2 of the manufacturing method in that the electron-emitting portion is formed of the auger-type stacked on the base portion 84 and the base portion 84, as in the variation-4 of the manufacturing method. It is comprised by the electron emission electrode 16E. Here, the base portion 84 and the electron-emitting electrode 16E are made of a different conductive material. Specifically, the base portion 84 is a member for adjusting the distance between the electron emission electrode 16E and the open end of the gate electrode 14, and also has a function as a resistor layer and contains a polysilicon layer containing impurities. It consists of. The electron emission electrode 16E is made of tungsten, and has an awl shape, more specifically, a cone shape. In addition, an adhesion layer 80 made of TiN is formed between the base portion 84 and the electron emission electrode 16E. In addition, the adhesion layer 80 is formed not for the functionally indispensable component of an electron emission part, but for manufacturing reasons. The opening 15 is formed by the insulating layer 13 being cut out from directly under the gate electrode 14 over the upper end of the base portion 84.
[513] Variation-5 of the manufacturing method will be described below with reference to FIGS. 48A, 48B and 49A, which are typical partial cross-sectional views of the first support and the like.
[514] [Step-1700]
[515] First, the formation of the opening 15 is performed in the same manner as in [Step-1300] of Modification-1 of the manufacturing method. Next, the base portion 84 for filling the bottom of the opening 15 can be formed by forming the base material forming conductive material layer on the entire surface including the inside of the opening 15 and etching the conductive material layer. have. In addition, although the base part 84 shown has the planarized surface, the surface may be recessed. In addition, the base portion 84 having the flattened surface can be formed by the same process as in [Step-1600] of the variation-4 of the manufacturing method. Further, the adhesion layer 80 and the conductive material layer 81 for forming an electron emission portion are sequentially formed on the entire surface including the remainder of the opening 15. At this time, the substantially funnel-shaped recess 81A which consists of the columnar part 81B which reflected the level | step difference between the upper end surface and the bottom surface of the remainder of the opening part 15, and the enlarged part 81C which communicates with the upper end of this columnar part 81B. The thickness of the conductive material layer 81 is selected so that) is generated on the surface of the conductive material layer 81. Next, a mask material layer 82 is formed on the conductive material layer 81. This mask material layer 82 is formed using copper, for example. 48A shows a state where the process up to this point is finished.
[516] [Step-1710]
[517] Next, the mask material layer 82 and the conductive material layer 81 are removed in a plane parallel to the surface of the first support 11, thereby leaving the mask material layer 82 in the columnar portion 81B ( See FIG. 48B). This removal can be performed by chemical mechanical polishing (CMP method) similarly to [Step-1430] of Modification-2 of the manufacturing method.
[518] [Step-1720]
[519] Next, when the conductive material layer 81, the mask material layer 82, and the adhesion layer 80 are etched, the electron-emitting electrode 16E having a conical shape corresponding to the size of the large resist selectivity by the mechanism described above. Is formed. Etching of these layers can be performed similarly to [Step-1440] of Variant-2 of the manufacturing method. The electron emission portion is formed by the adhesion layer 80 remaining between the electron emission electrode 16E and the base portion 84 and the electron emission electrode 16E and the base portion 84. Although the electron emitting part may have an awl shape as a whole, of course, in FIG. 49 (A), a part of the base part 84 showed the state which remained so that the bottom part of the opening part 15 may be filled. Such a shape may occur when the height of the mask material layer 82 embedded in the columnar portion 81B is low, or when the etching rate of the mask material layer 82 is relatively high. There is no obstacle.
[520] [Step-1730]
[521] Thereafter, when the sidewall surface of the insulating layer 13 is retracted in the opening 15 under isotropic etching conditions, the field emission device shown in FIG. 49B is completed. The isotropic etching conditions may be the same as those described in Variation-1 of the manufacturing method.
[522] [Spint Field Emission Device: Variation of Manufacturing Method-6]
[523] Variant-6 of the production method is Variant-3 of the production method. Variation-6 of the manufacturing method is different from Variation-3 of the manufacturing method, in that the electron-emitting portion is stacked on the base portion 84 and the base portion 84 in the same manner as the variation-4 of the manufacturing method. Is composed of the electron-emitting electrode 16E. Variation 6 of the manufacturing method will now be described with reference to FIG. 50, which is a typical partial cross-sectional view of a first support or the like.
[524] [Process-1800]
[525] The formation of the mask material layer 82 is performed in the same manner as in [Step-1700] of Modification-5 of the manufacturing method. Thereafter, only the mask material layer 82 on the conductive material layer 81 and the enlarged portion 81C is removed, thereby leaving the mask material layer 82 on the columnar portion 81B (see FIG. 50). For example, only the mask material layer 82 made of copper can be selectively removed without performing wet etching using a dilute hydrofluoric acid solution and removing the conductive material layer 81 made of tungsten. The subsequent processes such as etching the conductive material layer 81 and the mask material layer 82 and isotropic etching of the insulating layer 13 can all be performed in the same manner as in the modification-5 of the manufacturing method.
[526] [Planar Type Field Emission Device (Part 3)]
[527] The planar field emission element 3 is a modification of the planar field emission element 1 described above. The difference between the planar field emission element 3 and the planar field emission element 1 is in that it has a fourth structure.
[528] That is, the planar field emission device (part 3)
[529] (A) a band-shaped gate electrode support portion 313 formed of an insulating material formed on the first support 11,
[530] (B) a gate electrode 314 made of a band-like material layer 314A having a plurality of openings 315 formed therein, and
[531] (C) electron emission unit
[532] Made up of
[533] The band-like material layer 314A is placed so as to contact the top surface of the gate electrode support portion 313 and the opening 315 is positioned above the electron emission portion. The band material layer 314A is fixed to the top surface of the gate electrode support 313 with a thermosetting adhesive (for example, an epoxy adhesive). Alternatively, as shown in FIG. 51, a schematic partial cross-sectional view of the vicinity of the end portion of the first support 11, both ends of the stripe band material layer 314A are fixed to the periphery of the first support 11. It may be a structure. More specifically, for example, the protrusion 316 is formed in advance on the periphery of the first support 11, and the same material as the material forming the band-like material layer 314A on the top surface of the protrusion 316. The thin film 317 is formed. Then, the thin film 317 is welded to the thin film 317 by using a laser, for example, in a state in which the stripe band material layer 314A is laid over. In addition, the protrusion 316 may be formed at the same time as the gate electrode support 313, for example.
[534] Hereinafter, an example of the manufacturing method of a planar field emission element (the 3) is demonstrated.
[535] [Step-1900]
[536] First, a cathode electrode composed of a stripe-type cathode electrode conductive material layer extending in a first direction on the first support 11 in the same manner as in [Step-600] of the planar field emission device (1). 12) (consisting of Cr).
[537] [Step-1910]
[538] Subsequently, the insulating layer 13 is formed on the whole surface in the same manner as in [Step-610] of the planar field emission device (No. 1). Thereafter, the openings 15 are formed in the insulating layer 13 using lithography and etching techniques. Alternatively, when the insulating layer 13 is formed by, for example, a screen printing method, the opening 15 may be formed. In this way, the surface of the cathode electrode 12 corresponding to the electron emitting portion can be exposed at the bottom of the opening 15. Here, the insulating layer 13 corresponds to the gate electrode support portion 313.
[539] [Process-1920]
[540] Thereafter, the stripe band material layer 314A having the plurality of openings 315 formed thereon is attached to the gate electrode support 313 made of the insulating layer 13 so that the openings 315 are positioned above the electron emission portions. And a stripe band material layer 314A in a second direction different from the first direction, and are then composed of a stripe band material layer 314A. A gate electrode 314 having an opening 315 of is positioned above the electron emitting portion.
[541] In addition, the method of forming the gate electrode can be applied to the manufacture of the various field emission devices described above.
[542] [Flat field emission device (No. 4)]
[543] The planar field emission element 4 is a modification of the planar field emission element 3. The planar field emission element 4 is a partition between the cathode electrode 12 and the cathode electrode 12, unlike the planar field emission element 3, as shown in FIG. 52A. Gate electrode support 313 is formed. 52B is a schematic layout view of the cathode electrode 12, the band-like material layer 314A, the gate electrode 314, and the gate electrode support 313.
[544] The band material layer 314A is fixed to the top surface of the gate electrode support 313 with a thermosetting adhesive (for example, an epoxy adhesive). 51, both ends of the stripe band material layer 314A may be fixed to the periphery of the first support 11, as shown in the schematic partial cross-sectional view. More specifically, for example, the protrusion 316 is formed in advance on the periphery of the first support 11, and the same material as the material forming the band-like material layer 314A on the top surface of the protrusion 316. The thin film 317 is formed. Then, the thin film 317 is welded to the thin film 317 by using a laser, for example, in a state in which the stripe band material layer 314A is laid over.
[545] The planar field emission element 4 can be manufactured by, for example, a manufacturing method described below.
[546] [Process-2000]
[547] First, the gate electrode support 313 is formed on the first support 11 by, for example, sandblasting.
[548] [Process-2010]
[549] Thereafter, the electron emitting portion is formed on the first support 11. Specifically, a mask layer made of a resist material is formed on the entire surface by a spin coating method, and the mask layer of a portion of the region where the cathode electrode is formed between the gate electrode support 313 and the gate electrode support 313 is removed. . Thereafter, the cathode material conductive material layer made of chromium (Cr) is formed on the entire surface by sputtering in the same manner as in [Step-600] of the planar field emission device (1), and then the mask layer is removed. . As a result, the conductive material layer for the cathode electrode formed on the mask layer is also removed, leaving the cathode electrode 12 serving as the electron emitting portion between the gate electrode support portion 313 and the gate electrode support portion 313.
[550] [Process-2020]
[551] Thereafter, the stripe band material layer 314A having the plurality of openings 315 formed thereon is supported by the gate electrode support 313 so that the plurality of openings 315 are positioned above the electron emission section. Then, the gate electrode 314, which is composed of the stripe band material layer 314A, and has a plurality of openings 315, is positioned above the electron emission section. The method of arranging the stripe band material layer 314A may be as described above.
[552] In addition, the method of forming the gate electrode can be applied to the manufacture of the various field emission devices described above.
[553] The planar shape of the opening 315 in the planar field emission element (3) or the planar field emission element (4) is not limited to the circular shape. Modifications of the shape of the openings 315 formed in the band-shaped material layer 314A are illustrated in FIGS. 53A, 53B, and C and 53D.
[554] [Field Emission Element with Converging Electrode]
[555] 54 is a schematic partial sectional view of the electron emission unit 16 and the converging electrode 100. In the example shown in FIG. 54, the second insulating layer 101 is formed on the gate electrode 14 and the insulating layer 13, and the convergence electrode 100 is formed on the second insulating layer 101. An opening 102 communicating with the opening 15 is formed in the convergence electrode 100 and the second insulating layer 101. In addition, although a spin type field emission element is illustrated, the field emission element is not limited to this, and the above-mentioned various field emission elements can be used.
[556] In the field emission device in which the convergence electrode 100 is combined, the second insulating layer 101 is formed on the gate electrode 14 and the insulating layer 13, and then, on the second insulating layer 101. The process of forming the converging electrode 100 on the condensation electrode 100 and subsequently forming the opening 102 in the condensing electrode 100 and the second insulating layer 101 is included in the process of the manufacturing method of the various field emission devices described above. Since it can manufacture by making it, detailed description is abbreviate | omitted. Further, depending on the patterning of the converging electrodes, the condensing electrodes of a type in which one or a plurality of electron emitting portions or converging electrode units corresponding to the one or the plurality of pixels are assembled can be used, and one effective area can be provided. It is also possible to use a converging electrode of a type coated with a sheet-shaped conductive material.
[557] In addition, the convergence electrode is not only formed by this method, but also formed on both sides of a metal plate made of 42% Ni-Fe alloy having a thickness of several tens of micrometers, for example, each pixel after forming an insulating film made of SiO ₂ , for example. A converging electrode can also be produced by forming the opening 102 by punching or etching in an area corresponding to the opening.
[558] Then, the cathode panel, the metal plate, and the anode panel are stacked, the frames are disposed on the outer peripheral portions of both panels, and the heat treatment is performed to bond the insulating film formed on one side of the metal plate and the insulating layer 13 to the other side of the metal plate. The display device can also be completed by adhering the insulating film formed on the surface of the anode and the anode panel, integrating these members, and then vacuum sealing the same. In addition, the display device can be completed by stacking the cathode panel and the metal plate and performing heat treatment to bond them, and then assembling the cathode panel and the anode panel.
[559] In the case where such a converging electrode is provided,
[560] (2) The cathode electrode, the gate electrode and the converging electrode included in the cathode panel of the cold cathode electroluminescent display correspond to the first electrode formed on the first substrate, and are provided in the anode panel of the cold cathode electroluminescent display. The anode electrode corresponded to the 2nd electrode formed in the 2nd board | substrate
[561] (4) The cathode electrode and gate electrode provided in the anode panel of the cold cathode field emission display device correspond to the first electrode formed on the first substrate, and are provided in the cathode panel of the cold cathode field emission display device. And the converging electrode corresponds to the second electrode formed on the second substrate.
[562] And the knocking processing method of Example 1, Example 2, Example 4, and Example 5 should just be implemented about these structures.
[563] In addition, as described above,
[564] (6) A cathode, a gate electrode, and a converging electrode provided in the cathode panel of the cold cathode electroluminescence display device correspond to the electrodes formed on the substrate.
[565] Therefore, the substrate knocking processing method of the third embodiment, the sixth embodiment and the seventh embodiment may be performed on such a configuration.
[566] As mentioned above, although this invention was demonstrated according to the Example, this invention is not limited to these. Various conditions in the knocking processing method and the substrate knocking processing method described as an embodiment, and the structure and configuration of the cold cathode electroluminescence display device and the field emission device are examples and can be appropriately changed, and the cold cathode electroluminescence display device or the electric field can be appropriately changed. The manufacturing method of a light emitting element is also an illustration, and can be changed suitably.
[567] In addition, various materials used in the manufacture of the field emission device are exemplified and can be appropriately changed. In the field emission device, only one electron emission unit (electron emission electrode) corresponds to one opening has been described. However, depending on the structure of the field emission device, a plurality of electron emission units (electron emission electrode) are provided in one opening. Or an electron emitting portion (electron emitting electrode) corresponding to the plurality of openings. Alternatively, a plurality of openings may be formed in the gate electrode, one opening communicating with the plurality of openings may be formed in the insulating layer, and one or a plurality of electron emitting portions may be formed.
[568] The gate electrode may be a gate electrode of a type in which the effective area is covered with one sheet of conductive material (having openings). In this case, a positive voltage (for example, 160 volts) is applied to such a gate electrode, and each pixel is provided between a cathode electrode and a cathode electrode driving circuit, for example, with a switching element made of TFT, In accordance with the operation of the switching element, the light emitting state of the pixel is controlled by controlling the application state to the cathode electrode constituting each pixel, and the cathode electrode is covered with one sheet of conductive material. In this case, for example, 0 volts is applied to such a cathode, and switching between the gate electrode constituting each pixel and the gate electrode driving circuit, for example, consists of TFTs. The device is provided, and the light emitting state of the pixel is controlled by controlling the application state to the gate electrode constituting each pixel according to the operation of the switching element.
[569] In some cases, a voltage V ₁ higher than the cathode electrode may be applied to the gate electrode in a stepwise or pulsed manner so that the projections present on the gate electrode can be evaporated. In this case, after the completion of the pulse voltage application step of applying a pulse type voltage V ₁ higher than the cathode electrode to the gate electrode, a voltage V ₂ higher than the gate electrode is applied to the cathode electrode so that a current flowing between the gate electrode and the cathode electrode is applied. It is also possible to carry out the current detection step of detection. When the current flowing between the gate electrode and the cathode electrode reaches a predetermined value or less, the voltage higher than the voltage V ₁ is set to the new voltage V ₁ , and the voltage higher than the voltage V ₂ is set to the new voltage V ₂ . The pulse voltage application process and the current detection process may be repeated, and when the voltage V ₂ becomes equivalent to the actual operating voltage V _OP of the flat panel display device, the current flowing between the gate electrode and the cathode electrode reaches a predetermined value or less. The pulse voltage application process and the current detection process may be repeated until the voltage higher than the voltage V ₁ is a new voltage V ₁ , and the voltage V ₂ is a value corresponding to the actual operating voltage V _OP . The actual operation in these cases may be performed substantially the same as the knocking processing method described in the fourth and fifth embodiments.
[570] An electron emitting part may be comprised by the element generally called a surface conduction electron emitting element. The surface conduction electron-emitting device is, for example, tin oxide (SnO ₂ ), gold (Au), indium oxide (In ₂ O ₃ ) / tin oxide (SnO ₂ ), carbon, on a first support made of glass, A pair of electrodes made of a conductive material such as palladium oxide (PdO) and having a small area and arranged at a predetermined interval (gap) is formed in a matrix. A carbon thin film is formed on each electrode. And row direction wiring is connected to one electrode of a pair of electrode, and column direction wiring is connected to the other electrode of a pair of electrode. By applying a voltage to the pair of electrodes, an electric field is applied to the carbon thin film facing each other with a gap therebetween, and electrons are emitted from the carbon thin film. By impinging these electrons on the phosphor layer on the anode panel, the phosphor layer is excited to emit light, thereby obtaining a desired image.
[571] In the present invention, projections existing in the electrode can be reliably removed by the electric field evaporation. Therefore, discharge between the electrodes of the flat panel display device can be suppressed, stable operation is realized, and a flat display device having a high display quality and a long lifetime can be obtained. In addition, it becomes possible to loosen particle management and manufacturing process management at the time of manufacturing the flat panel display device. By adopting the knocking processing method or the substrate knocking processing method according to the second aspect of the present invention, the knocking process can be completed quickly, and the TAT can be shortened.

权利要求:
Claims (26)
[1" claim-type="Currently amended] Knocking in a flat panel display device in which a first substrate on which a first electrode is formed and a second substrate on which a second electrode are formed are disposed with a vacuum space therebetween, and the first substrate and the second substrate are bonded at their peripheral edges. As a treatment method,
Claim by applying a high voltage V ₁ than the second electrode to the first electrode in a stepwise manner, the knocking treatment method according to a flat display device, comprising a field-evaporation of the protrusions existing on the first electrode.
[2" claim-type="Currently amended] The method of claim 1,
After the completion of the first voltage application step of applying the voltage V ₁ higher than the second electrode to the first electrode, the voltage V ₂ higher than the first electrode is applied to the second electrode, so that the projections present on the second electrode are evaporated. A second voltage application process is executed, and after that, a voltage higher than the voltage V ₁ is set to the new voltage V ₁ , and a voltage higher than the voltage V ₂ is set to the new voltage V ₂ , and the first voltage applying process and the second voltage are applied. A knocking processing method in a flat panel display, characterized by repeating the process.
[3" claim-type="Currently amended] The method of claim 2,
A knocking processing method for a flat panel display device, characterized in that the value of the voltage V ₁ is equal to the value of the voltage V ₂ .
[4" claim-type="Currently amended] The method of claim 1,
The flat panel display device is a cold cathode electron emission display device.
The cathode electrode and the gate electrode of the cathode panel of the cold cathode field emission display device correspond to the first electrode formed on the first substrate,
The anode electrode provided in the anode panel of the said cold cathode field emission display device corresponds to the 2nd electrode formed in the 2nd board | substrate, The knocking processing method in the flat display device characterized by the above-mentioned.
[5" claim-type="Currently amended] The method of claim 1,
The flat panel display device is a cold cathode electron emission display device.
The cathode electrode, the gate electrode, and the convergence electrode of the cathode panel of the cold cathode field emission display device correspond to the first electrode formed on the first substrate,
The anode electrode provided in the anode panel of the said cold cathode field emission display device corresponds to the 2nd electrode formed in the 2nd board | substrate, The knocking processing method in the flat display device characterized by the above-mentioned.
[6" claim-type="Currently amended] The method of claim 1,
The flat panel display device is a cold cathode electron emission display device.
The anode electrode provided in the anode panel of the cold cathode field emission display device corresponds to the first electrode formed on the first substrate,
And a cathode electrode and a gate electrode of the cathode panel of the cold cathode electroluminescent display correspond to a second electrode formed on a second substrate.
[7" claim-type="Currently amended] The method of claim 1,
The flat panel display device is a cold cathode electron emission display device.
The anode electrode provided in the anode panel of the cold cathode field emission display device corresponds to the first electrode formed on the first substrate,
The cathode electrode, the gate electrode, and the converging electrode provided in the cathode panel of the cold cathode electroluminescence display device correspond to the second electrode formed on the second substrate. Way.
[8" claim-type="Currently amended] In a flat display device in which a first substrate having a first electrode and a second substrate having a second electrode are disposed with a vacuum space interposed therebetween, wherein the first substrate and the second substrate are bonded at the peripheral edges of these substrates. As a knocking treatment method of
A knocking processing method in a flat panel display device, characterized in that a voltage V ₁ higher than a second electrode is applied to the first electrode in a pulsed form so that the projections present on the first electrode are evaporated.
[9" claim-type="Currently amended] The method of claim 8,
After completion of the pulse voltage application step of applying a pulse type voltage V ₁ higher than the second electrode to the first electrode, a voltage V ₂ higher than the first electrode is applied to the second electrode and flows between the first electrode and the second electrode. A knocking processing method in a flat panel display device, characterized by performing a current detection step of detecting a current.
[10" claim-type="Currently amended] The method of claim 9,
When the current flowing between the first electrode and the second electrode becomes a predetermined value or less, the voltage higher than the voltage V ₁ is set as the new voltage V ₁ , and the voltage higher than the voltage V ₂ is set as the new voltage V ₂ , and the pulse is generated. A knocking processing method for a flat panel display device characterized by repeating a voltage application process and a current detection process.
[11" claim-type="Currently amended] The method of claim 10,
When the voltage V ₂ becomes equivalent to the actual operating voltage V _OP of the flat panel display device, the voltage higher than the voltage V ₁ is changed to a new voltage V until the current flowing between the first electrode and the second electrode becomes a predetermined value or less. A knocking processing method for a flat panel display device, characterized by repeating a pulse voltage application step and a current detection step with a value of ₁ and a voltage V _{2 corresponding} to a real operating voltage V _OP .
[12" claim-type="Currently amended] The method of claim 8,
The flat panel display device is a cold cathode electron emission display device.
The cathode electrode and the gate electrode of the cathode panel of the cold cathode field emission display device correspond to the first electrode formed on the first substrate,
The anode electrode provided in the anode panel of the said cold cathode field emission display device corresponds to the 2nd electrode formed in the 2nd board | substrate, The knocking processing method in the flat display device characterized by the above-mentioned.
[13" claim-type="Currently amended] The method of claim 8,
The flat panel display device is a cold cathode electron emission display device.
The cathode electrode, the gate electrode, and the convergence electrode of the cathode panel of the cold cathode field emission display device correspond to the first electrode formed on the first substrate,
The anode electrode provided in the anode panel of the said cold cathode field emission display device corresponds to the 2nd electrode formed in the 2nd board | substrate, The knocking processing method in the flat display device characterized by the above-mentioned.
[14" claim-type="Currently amended] The method of claim 8,
The flat panel display device is a cold cathode electron emission display device.
The anode electrode provided in the anode panel of the cold cathode field emission display device corresponds to the first electrode formed on the first substrate,
And a cathode electrode and a gate electrode of the cathode panel of the cold cathode electroluminescent display correspond to a second electrode formed on a second substrate.
[15" claim-type="Currently amended] The method of claim 8,
The flat panel display device is a cold cathode electron emission display device.
The anode electrode provided in the anode panel of the cold cathode field emission display device corresponds to the first electrode formed on the first substrate,
And a cathode electrode, a gate electrode, and a converging electrode of the cathode panel of the cold cathode electroluminescence display device correspond to a second electrode formed on a second substrate.
[16" claim-type="Currently amended] After arranging the substrate for a flat panel display device on which an electrode is formed and the substrate for knocking on which a knocking electrode is formed with a vacuum space interposed therebetween,
A knocking processing method for a substrate for a flat panel display device, wherein a voltage V ₁ higher than that of the knocking electrode is applied to the electrode in a stepwise manner to evaporate the projections present on the electrode.
[17" claim-type="Currently amended] The method of claim 16,
The substrate for a flat panel display device is a substrate for a cold cathode electron emission display device.
And a cathode electrode and a gate electrode of the cathode panel of the cold cathode field emission device correspond to electrodes formed on a substrate for a flat panel display.
[18" claim-type="Currently amended] The method of claim 16,
The substrate for a flat panel display device is a substrate for a cold cathode electron emission display device.
And a cathode electrode, a gate electrode, and a converging electrode of the cathode panel of the cold cathode field emission display device correspond to electrodes formed on the substrate for a flat panel display device.
[19" claim-type="Currently amended] The method of claim 16,
The substrate for a flat panel display device is a substrate for a cold cathode electron emission display device.
The anode electrode provided in the anode panel of the said cold cathode field emission display device corresponds to the electrode formed in the board | substrate for flat panel displays. The knocking processing method in the board | substrate for flat panel display apparatuses characterized by the above-mentioned.
[20" claim-type="Currently amended] After arranging the substrate for a flat panel display device on which an electrode is formed and the substrate for knocking on which a knocking electrode is formed with a vacuum space interposed therebetween,
A knocking processing method for a substrate for a flat panel display device, characterized by applying a voltage V ₁ higher than that of the knocking electrode to the electrode in a pulsed form to thereby evaporate the projections present on the electrode.
[21" claim-type="Currently amended] The method of claim 20,
Applying a pulse voltage to apply the voltage V ₁ of a high pulse-like than the electrode for knocking the electrodes after completion of the process, by applying a high voltage V ₂ than the electrode to the electrode for knocking, a current for detecting a current flowing between the electrode and the knocking electrode A knocking processing method for a substrate for a flat panel display, characterized by performing a detection step.
[22" claim-type="Currently amended] The method of claim 21,
If the current flowing between the electrode and the knock electrodes to a predetermined value or less, a higher than the voltage the voltage V ₁ to a new voltage V _1, and to a higher voltage than the voltage V ₂ to a new voltage V _2, applied pulse voltage A knocking processing method for a substrate for a flat panel display, characterized by repeating the step and the current detection step.
[23" claim-type="Currently amended] The method of claim 22,
When the voltage V ₂ is equivalent to the actual operating voltage V _OP of the flat panel display device, the voltage higher than the voltage V ₁ is changed to the new voltage V ₁ until the current flowing between the electrode and the knocking electrode becomes a predetermined value or less. and, by the voltage V ₂ to a value corresponding to the real operating voltage V _OP, knocking treatment method for a flat display device, characterized in that repeating the pulse voltage application process and the current detection process.
[24" claim-type="Currently amended] The method of claim 20,
The substrate for a flat panel display device is a substrate for a cold cathode electron emission display device.
And a cathode electrode and a gate electrode of the cathode panel of the cold cathode field emission device correspond to electrodes formed on a substrate for a flat panel display.
[25" claim-type="Currently amended] The method of claim 20,
The substrate for a flat panel display device is a substrate for a cold cathode electron emission display device.
And a cathode electrode, a gate electrode, and a converging electrode of the cathode panel of the cold cathode field emission display device correspond to electrodes formed on the substrate for a flat panel display device.
[26" claim-type="Currently amended] The method of claim 20,
The substrate for a flat panel display device is a substrate for a cold cathode electron emission display device.
The anode electrode provided in the anode panel of the said cold cathode field emission display device corresponds to the electrode formed in the board | substrate for flat panel display devices.

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同族专利:

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公开号 | 公开日

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JP2002270099A|2002-09-20|

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US20040130510A1|2004-07-08|

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US6945838B2|2005-09-20|

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WO2002071434A1|2002-09-12|

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TWI273622B|2007-02-11|

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CN1462464A|2003-12-17|

引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
2001-03-07|Priority to JP2001063365A

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2001-03-07|Priority to JPJP-P-2001-00063365

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2002-01-24|Application filed by 소니 가부시끼 가이샤

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2003-01-14|Publication of KR20030004390A

优先权:

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申请号 | 申请日 | 专利标题

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JP2001063365A|JP2002270099A|2001-03-07|2001-03-07|Knocking process method in flat type display device and knocking process method in substrate for flat type display device|

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JPJP-P-2001-00063365|2001-03-07|